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FET, MOSFET Arrays
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GCMX005A120S7B1MOSFET 2N-CH 1200V 348A |
20 | 0.00 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 348A (Tc) | 7mOhm @ 200A, 20V | 4V @ 80mA | 978nC @ 20V | 29300pF @ 800V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FS13MR12W2M1HPB11BPSA1MOSFET |
18 | 0.00 |
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Datasheet |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CHB011M12GM4SIC, MODULE, 11M, 1200V, 48 MM, |
18 | 0.00 |
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Datasheet |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CBB011M12GM4SIC, MODULE, 11M, 1200V, 48 MM, |
16 | 0.00 |
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Datasheet |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CBB011M12GM4TSIC, MODULE, 11M, 1200V, 48 MM, |
8 | 0.00 |
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Datasheet |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CHB011M12GM4TSIC, MODULE, 11M, 1200V, 48 MM, |
3 | 0.00 |
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Datasheet |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CAB011A12GM3TMOSFET 2N-CH 1200V 141A MODULE |
5 | 0.00 |
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Datasheet |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 141A (Tj) | 13.9mOhm @ 150A, 15V | 3.9V @ 34mA | 354nC @ 15V | 11000pF @ 1000V | 10mW | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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FF4MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V AG-EASY2B |
17 | 0.00 |
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Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 170A | 4mOhm @ 200A, 18V | 5.15V @ 80mA | 594nC @ 18V | 17600pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY2B |
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F411MR12W2M1HPB76BPSA1MOSFET |
9 | 0.00 |
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Datasheet |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF6MR12KM1HPHPSA1MOSFET |
10 | 0.00 |
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Datasheet |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CAB004M12GM4SIC, MODULE, 4M, 1200V, 48 MM, G |
18 | 0.00 |
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Datasheet |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CAB004M12GM4TSIC, MODULE, 4M, 1200V, 48 MM, G |
18 | 0.00 |
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Datasheet |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MSCSM170HRM233AGMOSFET 4N-CH 1700V/1200V 124A |
10 | 0.00 |
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Datasheet |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 124A (Tc), 89A (Tc) | 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V | 3.2V @ 5mA, 2.8V @ 3mA | 356nC @ 20V, 232nC @ 20V | 6600pF @ 1000V, 3020pF @ 1000V | 602W (Tc), 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FF6MR20W2M1HB70BPSA1FF6MR20W2M1HB70BPSA1 |
15 | 0.00 |
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Datasheet |
EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2000V (2kV) | 160A (Tj) | 8.1mOhm @ 160A, 18V | 5.15V @ 112mA | 780nC @ 3V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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F3L6MR20W2M1HB70BPSA1F3L6MR20W2M1HB70BPSA1 |
15 | 0.00 |
|
Datasheet |
EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | Silicon Carbide (SiC) | 2000V (2kV) | 155A (Tj) | 8.7mOhm @ 100A, 18V | 5.15V @ 112mA | 297nC @ 18V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HRM163AGMOSFET 4N-CH 1200V/700V 173A |
10 | 0.00 |
|
Datasheet |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 173A (Tc), 124A (Tc) | 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 6mA, 2.4V @ 4mA | 464nC, 215nC @ 20V | 6040pF @ 1000V, 4500pF @ 700V | 745W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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CAB6R0A23GM4MOSFET 2N-CH 2300V 150A |
6 | 0.00 |
|
Datasheet |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2300V (2.3kV) | 150A | 8.4mOhm @ 200A, 15V | 4V @ 95mA | 735nC @ 15V | 30500pF @ 1.5kV | 610W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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FF3MR12KM1HHPSA1MOSFET 2N-CH 1200V 190A AG62MMHB |
19 | 0.00 |
|
Datasheet |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 190A (Tc) | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF3MR12KM1HPHPSA1MOSFET 2N-CH 1200V 220A AG62MMHB |
13 | 0.00 |
|
Datasheet |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 220A | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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APTM100A13SCGMOSFET 2N-CH 1000V 65A SP6 |
4 | 0.00 |
|
- |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 1000V (1kV) | 65A | 156mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
