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Infineon Technologies FF3MR12KM1HPHPSA1
- Part No.:
- FF3MR12KM1HPHPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF3MR12KM1HPHPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V 220A AG62MMHB
- Quantity:
- Payment:
- Shipping:
Inventory:13
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Product details
Overview
FF3MR12KM1HPHPSA1 from Infineon Technologies is a 62 mm C-Series power module integrating two 1200 V CoolSiC™ Trench MOSFETs in half-bridge configuration, rated for 280 A continuous drain current and 560 A repetitive peak current, with pre-applied thermal interface material and 4 kV AC insulation - deployed in high-efficiency DC/DC converters and EV DC fast chargers.
For engineers reviewing the FF3MR12KM1HPHPSA1 datasheet, FF3MR12KM1HPHPSA1 pinout, FF3MR12KM1HPHPSA1 application, or FF3MR12KM1HPHPSA1 equivalent, this page delivers verified electrical specs (RDS(on) = 2.94–6.32 mΩ), thermal resistance (RthJH = 0.233 K/W), switching timing (td(off) ≤ 144 ns), body diode forward voltage (VSD = 3.85–5.59 V), and industrial qualification per IEC 60747/60749/60068.
Technical Context
This module implements a dual-channel SiC MOSFET half-bridge with integrated body diodes, optimized for high-frequency switching up to 100 kHz in hard-switched topologies. Its low stray inductance (20 nH) and low internal gate resistor (1.9 Ω) enable precise gate control and reduced switching oscillation.
The module uses Al2O3 ceramic isolation (class 1, IEC 61140) with 29 mm creepage (terminal-to-baseplate) and operates at junction temperatures up to 175 °C, supported by pre-applied TIM for consistent thermal performance under sustained 215 A DC load at TBPmax = 125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Withstands DC bus voltages up to 1200 V in solar inverters and EV charging systems without breakdown. |
| IDN / IDRM | 280 A continuous / 560 A peak - Supports high-power 3-phase DC/DC stages with short-term overload capability. |
| RDS(on) | 2.94–6.32 mΩ (Tvj = 25–175 °C) - Enables <1.5 W conduction loss per MOSFET at 200 A, reducing heatsink requirements. |
| Eon/Eoff | 11.1 mJ / 5.1 mJ (Tvj = 175 °C) - Low energy loss enables >99% efficiency in 25–100 kHz switching applications. |
| RthJH | 0.233 K/W - Valid with Infineon pre-applied TIM; allows direct mounting to cold plates without additional paste validation. |
| VSD | 3.85–5.59 V (ISD = 280 A, Tvj = 25–175 °C) - Body diode forward drop impacts freewheeling losses in asymmetric PWM topologies. |
| LsCE | 20 nH - Minimizes voltage overshoot during turn-off, relaxing snubber design in high-di/dt circuits. |
Pinout & Package
FF3MR12KM1HPHPSA1 is housed in a standardized 62 mm C-Series industrial power module package with copper baseplate, Al2O3 isolation, and M6 screw terminals. Dimensions: 62 mm × 62 mm × 17 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1 | High-side source | Common source node for upper MOSFET; connects to phase output in half-bridge leg. |
| P2 | Low-side drain | Common drain node for lower MOSFET; ties to DC-link negative rail. |
| N1 | High-side drain / Phase output | Switching node connecting to load or transformer primary; carries full AC current. |
| N2 | Low-side source | Common source node for lower MOSFET; returns to DC-link negative via low-inductance path. |
| G1, G2 | Gate terminals (HS & LS) | Isolated gate inputs accepting ±5/18 V drive; internal RGint = 1.9 Ω reduces external gate resistor count. |
| S1, S2 | Source sense (HS & LS) | Kelvin connections for accurate gate-drive referencing and current sensing feedback. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 2.94 mΩ RDS(on) at 25 °C - 40% lower conduction loss vs. planar SiC equivalents. |
| Pre-applied thermal interface material (TIM) | Eliminates manual TIM dispensing and process variability; validated for 1000+ thermal cycles at ΔT = 100 K. |
| 4 kV AC, 1 min isolation | Meets reinforced insulation requirements for EV chargers and grid-tied solar inverters per IEC 62109 and UL 62368-1. |
| Low stray inductance (20 nH) | Reduces voltage spike (V = L·di/dt) during 4.15 kA/µs switching, enabling reliable operation without active clamping. |
| Qualified per IEC 60747, 60749, 60068 | Validated for industrial environments including temperature cycling (-40 to 125 °C), humidity, and mechanical shock. |
Applications
| UPS Systems | Solar Inverters |
|---|---|
|
Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output during grid failure. IC Role / Device Role / Timing Role: Half-bridge power stage in DC/AC inverter section, switching at 16–20 kHz. Use Value: Low RDS(on) and Eoff reduce conduction and switching losses, extending battery runtime by ≥8% versus Si IGBT modules. |
Use Scenario: Central string inverter converting 1000–1500 V DC PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Active clamp flyback or three-level NPC inverter switch with 50 kHz PWM. Use Value: 175 °C max junction rating supports derating-free operation in desert ambient (60 °C), improving system MTBF. |
| EV DC Fast Chargers | Energy Storage Systems |
|
Use Scenario: 150–350 kW bidirectional charger converting AC grid to 200–1000 V DC for battery packs. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) isolated DC/DC stage. Use Value: 20 nH stray inductance and 1.9 Ω RGint support ZVS over 90% load range, achieving >98.5% peak efficiency. |
Use Scenario: Grid-scale BESS converter managing charge/discharge between 600–1000 V DC battery stack and medium-voltage AC grid. IC Role / Device Role / Timing Role: Three-phase two-level inverter leg operating at 8–12 kHz with harmonic filtering. Use Value: Pre-applied TIM ensures stable RthJH across 20-year field life, eliminating TIM dry-out risk in unattended installations. |
Availability
FF3MR12KM1HPHPSA1 is available at Aetrix Electronics and suitable for UPS systems, solar inverters, and EV DC fast chargers requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.
Supply support for FF3MR12KM1HPHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered for high-power, high-frequency industrial and automotive traction applications demanding reliability, efficiency, and thermal robustness.
FAQ
What gate driver is recommended for FF3MR12KM1HPHPSA1?
Infineon recommends its 1EDCxxI1xG and 1ED34xxMC families - specifically 1ED3461MC12M - which deliver ±10 A peak drive, programmable dead time, and DESAT protection synchronized to the module's 1.9 Ω internal gate resistor and 0.8 µC total gate charge. These drivers support the required -5/18 V gate bias and withstand dV/dt up to 50 V/ns.
Does FF3MR12KM1HPHPSA1 include anti-parallel diodes?
Yes - each MOSFET integrates a monolithic body diode with forward voltage VSD = 3.85–5.59 V at 280 A and 25–175 °C. These diodes are rated for 120 A DC freewheeling current at Tvj = 175 °C and VGS = -3 V, enabling use in hard-commutated topologies without external diodes.
What is the maximum allowable baseplate temperature?
The maximum baseplate operating temperature is 125 °C, as specified in Table 2 of the datasheet. This limit assumes use of the pre-applied TIM and proper mounting torque (3–6 Nm for M6 screws). Exceeding 125 °C baseplate temperature risks TIM degradation and accelerated aging of the Al2O3 isolation layer.
Is FF3MR12KM1HPHPSA1 qualified for automotive applications?
No - FF3MR12KM1HPHPSA1 is qualified for industrial applications per IEC 60747, 60749, and 60068, but not AEC-Q101 or AQG324. It lacks automotive-specific stress testing (e.g., HTGB, uHAST) and is not listed in Infineon's automotive-grade product catalog. For EV traction inverters, consider the AIK120N120CPM or similar AEC-Q101-qualified modules.
FF3MR12KM1HPHPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Box
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 220A
- Rds On (Max) @ Id, Vgs:
- 4.44mOhm @ 280A, 18V
- Vgs(th) (Max) @ Id:
- 5.1V @ 112mA
- Gate Charge (Qg) (Max) @ Vgs:
- 800nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 24200pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-62MMHB
FF3MR12KM1HPHPSA1 FAQ
1.How can I place an order for FF3MR12KM1HPHPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF3MR12KM1HPHPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF3MR12KM1HPHPSA1 reliable?
The price and inventory of FF3MR12KM1HPHPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF3MR12KM1HPHPSA1 is usually 5 days.
3.What payment methods are accepted for FF3MR12KM1HPHPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF3MR12KM1HPHPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF3MR12KM1HPHPSA1?
FF3MR12KM1HPHPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF3MR12KM1HPHPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF3MR12KM1HPHPSA1?
For technical support, including FF3MR12KM1HPHPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF3MR12KM1HPHPSA1 requirements.
6.How does Aetrix verify that FF3MR12KM1HPHPSA1 is sourced from the original manufacturer or authorized distributors?
All FF3MR12KM1HPHPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF3MR12KM1HPHPSA1 meets industry standards.
7.What is the process for return or replacement of FF3MR12KM1HPHPSA1?
All FF3MR12KM1HPHPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF3MR12KM1HPHPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF3MR12KM1HPHPSA1 part is unused and in its original packaging.
Return procedure for FF3MR12KM1HPHPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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