Infineon Technologies F3L6MR20W2M1HB70BPSA1

Overview

F3L6MR20W2M1HB70BPSA1 from Infineon Technologies is a 62 mm C-Series dual-channel SiC MOSFET power module integrating two FF3MR20KM1H CoolSiC™ trench MOSFETs in a half-bridge configuration, rated for 2000 V V_DSS, 400 A continuous drain current (I_DN), and 800 A repetitive peak current (I_DRM). It delivers low switching losses (E_on = 79.8 mJ, E_off = 26.7 mJ at T_vj = 175 °C) and high current density, targeting high-efficiency DC/DC converters and solar inverters operating above 10 kHz.

For engineers reviewing the F3L6MR20W2M1HB70BPSA1 datasheet, F3L6MR20W2M1HB70BPSA1 pinout, F3L6MR20W2M1HB70BPSA1 application, or F3L6MR20W2M1HB70BPSA1 equivalent, key selection criteria include its 2000 V blocking capability, 0.088 K/W junction-to-case thermal resistance per switch, 2.6–7.8 mΩ R_DS(on) range across temperature, integrated body diode forward voltage (V_SD = 4.0–6.15 V), and 4 kV AC insulation rating for industrial UPS and grid-tied photovoltaic systems.

Technical Context

This module implements a symmetrical half-bridge topology with two identical CoolSiC™ trench MOSFETs (T1/T2), each featuring a dedicated body diode optimized for hard-switched freewheeling. Gate drive requires bipolar biasing (–3 V off-state, +18 V on-state) to ensure robust turn-off immunity and minimize Miller-induced false triggering.

Thermal performance is defined by low R_thJC = 0.088 K/W per switch and R_thCH = 0.033 K/W (with λ_grease = 1 W/(m·K)), enabling operation up to T_vj = 175 °C under overload. Stray inductance is minimized to 20 nH, supporting fast dv/dt (15.9 kV/µs) and di/dt (3.2 kA/µs) transients without excessive voltage overshoot.

Key Specifications

Pinout & Package

The F3L6MR20W2M1HB70BPSA1 is housed in a 62 mm C-Series industrial power module package with copper baseplate and Al₂O₃ ceramic isolation. Terminals are arranged for low-inductance parallel busbar mounting (M6 screws, 3–6 Nm torque).

Key Features

Applications

Availability

F3L6MR20W2M1HB70BPSA1 is available at Aetrix Electronics and suitable for solar central inverters, industrial UPS systems, high-frequency DC/DC converters, and EV charging station power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability deployments.

Supply support for F3L6MR20W2M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies for high-efficiency power conversion.

This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered specifically for industrial and renewable energy applications demanding 175 °C operation, 2000 V blocking, and ultra-low switching losses in compact form factors.

FAQ

What gate drive voltage is required for reliable operation?

F3L6MR20W2M1HB70BPSA1 requires a bipolar gate drive: –3 V for turn-off and +18 V for turn-on. This ensures sufficient negative bias to suppress Miller-induced false turn-on during high dv/dt transitions and optimal R_DS(on) at full current. Using only 0 V or +15 V risks shoot-through and increased conduction loss.

How does the integrated body diode compare to discrete SiC Schottky diodes?

The monolithically integrated body diode exhibits V_SD = 4.0–6.15 V (vs. 1.4–1.7 V for discrete SiC Schottky), but offers soft reverse recovery (Q_rr not specified, but inherently low due to unipolar conduction) and perfect thermal coupling to the MOSFET die. It eliminates bond-wire inductance and matching issues, making it superior for hard-switched freewheeling in half-bridge configurations.

Can this module be used in a three-level NPC topology?

Yes-its symmetrical half-bridge structure and 2000 V V_DSS rating allow direct implementation as the outer switches in a three-level neutral-point-clamped (NPC) inverter. The 4 kV isolation and 29 mm creepage distance meet IEC 61000-4-5 surge requirements for such topologies when paired with appropriate clamping diodes and gate drivers.

What thermal interface material is recommended for mounting?

Infineon specifies thermal grease with λ = 1 W/(m·K) for R_thCH = 0.033 K/W. Recommended materials include Dow Corning TC-5122 or Henkel Loctite ABLESTIK QMI510, applied at 0.1–0.15 mm thickness. Phase-change pads (e.g., Laird TPCM 600) are acceptable if their effective λ ≥ 0.9 W/(m·K) and compression force meets the 340 g module weight requirement.