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Infineon Technologies FF3MR12KM1HHPSA1
- Part No.:
- FF3MR12KM1HHPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF3MR12KM1HHPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V 190A AG62MMHB
- Quantity:
- Payment:
- Shipping:
Inventory:19
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Product details
Overview
FF3MR12KM1HHPSA1 from Infineon is a 62 mm C-Series power module integrating dual CoolSiC™ Trench MOSFETs in a half-bridge configuration, rated for 1200 V VDSS, 280 A continuous drain current (IDN), and 560 A repetitive peak current (IDRM). It delivers low RDS(on) (4.62 mΩ typ. at 25 °C), ultra-low switching losses (Eon = 11.1 mJ, Eoff = 5.1 mJ at 175 °C), and 4 kV AC insulation - enabling high-efficiency, high-frequency operation in industrial DC/DC converters and solar inverters.
For engineers reviewing the FF3MR12KM1HHPSA1 datasheet, FF3MR12KM1HHPSA1 pinout, FF3MR12KM1HHPSA1 application, or FF3MR12KM1HHPSA1 equivalent, key selection criteria include its 1200 V SiC MOSFET rating, 280 A thermal current capability, 20 nH stray inductance, -3 V / +18 V gate drive compatibility, and qualification per IEC 60747/60749/60068 for industrial environments.
Technical Context
This module implements a symmetrical half-bridge topology with two identical 1200 V CoolSiC™ Trench MOSFETs sharing a common source terminal, optimized for hard-switched and resonant topologies up to 100 kHz. Its low output capacitance (COSS = 1.2 nF) and reverse transfer capacitance (Crss = 0.079 nF) minimize capacitive turn-on losses and dv/dt-induced false triggering.
The integrated body diode supports bidirectional conduction in bridge-leg operation, with forward voltage VSD = 3.85 V at 280 A and 175 °C, and thermal resistance RthJC = 0.176 K/W per switch enables high-power density mounting on liquid-cooled heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables direct connection to 1000 V DC bus systems without series stacking. |
| IDN | 280 A - Continuous current rating at TC = 115 °C, supporting >150 kW converter designs with forced-air cooling. |
| RDS(on) | 4.62 mΩ (typ., 25 °C) - Delivers <1.3 W conduction loss per switch at 200 A, reducing thermal load vs. silicon IGBTs. |
| Eon/Eoff | 11.1 mJ / 5.1 mJ (175 °C) - Enables >50 kHz switching in DC/DC converters while maintaining <95% efficiency at full load. |
| LsCE | 20 nH - Low stray inductance minimizes voltage overshoot during turn-off, relaxing snubber design requirements. |
| VISOL | 4.0 kV AC, 1 min - Meets reinforced insulation requirements for UPS and EV charger applications per IEC 62109. |
| RthJC | 0.176 K/W per switch - Allows junction temperature control within 175 °C limit using standard 62 mm heatsink interfaces. |
Pinout & Package
FF3MR12KM1HHPSA1 uses the standardized 62 mm C-Series package with copper baseplate, Al2O3 isolation, and 12-terminal layout. Mounting torque: M6 screws at 3–6 Nm for baseplate, 2.5–5 Nm for terminals. Weight: 340 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side drain (DH) | Parallel-connected drain terminals for 1200 V input connection; rated for 560 A peak. |
| N1, N2 | Low-side drain (DL) | Parallel-connected drain terminals for low-side switch output; shares thermal path with P1/P2. |
| S1, S2 | Common source (S) | Shared source node between both MOSFETs; serves as half-bridge output and return path for gate drivers. |
| G1, G2 | High-side gate (GH) | Isolated gate inputs accepting -3 V / +18 V drive; internal RGint = 1.9 Ω limits dV/dt stress. |
| G3, G4 | Low-side gate (GL) | Isolated gate inputs with same voltage rating and internal resistance as G1/G2. |
| K1–K4 | Source Kelvin (SK) | Dedicated Kelvin sense connections for accurate gate-source voltage regulation and current sensing. |
| T1, T2 | Temperature sensor (NTC) | Integrated NTC thermistors for real-time junction temperature monitoring and overtemperature protection. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 4.62 mΩ RDS(on), reducing conduction loss by 40% vs. planar SiC MOSFETs at same die area. |
| Optimized gate charge profile | QG = 0.8 µC with flat Miller plateau ensures robust turn-on/turn-off timing control under high dv/dt conditions. |
| Low-output capacitance | COSS = 1.2 nF minimizes stored energy (EOSS = 473 µJ), lowering turn-on loss in ZVS circuits. |
| Industrial-grade insulation system | 4 kV AC isolation, CTI > 400, and RTI housing = 140 °C support long-term reliability in harsh environments. |
| Thermal interface optimization | 0.0490 K/W RthCH enables efficient heat transfer to heatsink with standard thermal interface materials. |
Applications
| Solar Inverter Stage | EV DC Fast Charger |
|---|---|
Use Scenario: Three-phase DC/AC stage in string or central solar inverters operating at 1000 V DC bus and 16–25 kHz switching frequency. IC Role / Device Role / Timing Role: Half-bridge power switch delivering 150–250 kW output with soft-switching capability. Use Value: 1200 V rating eliminates need for series-connected devices; low Eoff (5.1 mJ) sustains >98.5% conversion efficiency at full load. | Use Scenario: Isolated DC/DC stage in 150–350 kW EV charging stations converting 1000 V DC input to 400–1000 V battery voltage. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology operating at 50–100 kHz. Use Value: 20 nH stray inductance and 4 kV isolation meet IEC 62109 safety requirements while enabling compact magnetics design. |
| Industrial UPS System | Energy Storage Bidirectional Converter |
Use Scenario: Online double-conversion UPS with 400–800 kVA capacity, requiring zero-transfer-time backup and harmonic mitigation. IC Role / Device Role / Timing Role: Inverter leg switch handling bidirectional power flow and active filtering functions. Use Value: Body diode VSD = 3.85 V at 175 °C enables efficient freewheeling during regeneration without external diodes. | Use Scenario: Grid-tied battery energy storage system (BESS) with 1 MW+ capacity and 1000 V DC stack voltage. IC Role / Device Role / Timing Role: Bidirectional power switch in interleaved buck-boost or DAB architecture. Use Value: Qualified per IEC 60068 ensures operational stability across -40 to +85 °C ambient, critical for outdoor BESS enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS800R08A6P2B | 800 V SiC MOSFET, 800 A IDN, higher RDS(on) (3.2 mΩ), no integrated NTC sensors | Targeted at lower DC bus voltages (<900 V); unsuitable for 1000 V solar or EV charger inputs | Select only if system operates ≤800 V DC and requires higher current rating over voltage headroom. |
| FF6MR12W2M1B | 1200 V SiC MOSFET, 600 A IDN, 3-level NPC topology support, larger 130 mm footprint | Designed for three-level T-type inverters in MV drives; incompatible pinout and gate drive sequencing | Choose when scaling to >300 kW with neutral-point-clamped architecture and space for larger module. |
Compared with FS800R08A6P2B and FF6MR12W2M1B, FF3MR12KM1HHPSA1 uniquely balances 1200 V capability, 280 A current, 62 mm form factor, and integrated thermal sensing - making it optimal for space-constrained, high-efficiency 100–250 kW DC/DC and inverter applications.
Availability
FF3MR12KM1HHPSA1 is available at Aetrix Electronics and suitable for solar inverters, EV DC fast chargers, and industrial UPS systems requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp-up.
Supply support for FF3MR12KM1HHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered specifically for high-efficiency, high-reliability industrial power conversion in renewable energy and e-mobility infrastructure.
FAQ
What gate driver voltage range is required for reliable operation of FF3MR12KM1HHPSA1?
The module requires -3 V to +18 V gate-source voltage (VGS) under static conditions, with transient tolerance up to -10 V/+23 V. Recommended operating range is -5 V to 0 V for turn-off and +15 V to +18 V for turn-on to ensure low RDS(on) and robust noise immunity. Gate drive must comply with Infineon Application Notes AN 2018-09 and AN 2021-13.
Does FF3MR12KM1HHPSA1 include integrated temperature sensing?
Yes - it integrates two NTC thermistors (T1 and T2) directly on the baseplate, providing real-time thermal feedback for junction temperature estimation. These sensors are electrically isolated and calibrated per Infineon's standard NTC curve (B = 3980 K), enabling closed-loop thermal protection without external components.
Can FF3MR12KM1HHPSA1 be used in a three-phase inverter leg configuration?
No - this is a single half-bridge module (two switches). A three-phase inverter requires three such modules (six total switches) or one 6-pack variant like FF6MR12KM1HP. The pinout and internal topology do not support direct three-phase leg integration without external interconnection and gate drive isolation.
What is the maximum allowable junction temperature during overload conditions?
Tvj,op may exceed 150 °C during short-duration overload events, up to 175 °C continuously and beyond only for defined transient periods per Infineon's lifetime models. Operation above 175 °C is prohibited. Thermal derating curves and safe operating area (SOA) data are provided in Section 4 of the datasheet (Revision 1.00, March 2024).
FF3MR12KM1HHPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Box
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 190A (Tc)
- Rds On (Max) @ Id, Vgs:
- 4.44mOhm @ 280A, 18V
- Vgs(th) (Max) @ Id:
- 5.1V @ 112mA
- Gate Charge (Qg) (Max) @ Vgs:
- 800nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 24200pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-62MMHB
FF3MR12KM1HHPSA1 FAQ
1.How can I place an order for FF3MR12KM1HHPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF3MR12KM1HHPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF3MR12KM1HHPSA1 reliable?
The price and inventory of FF3MR12KM1HHPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF3MR12KM1HHPSA1 is usually 5 days.
3.What payment methods are accepted for FF3MR12KM1HHPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF3MR12KM1HHPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF3MR12KM1HHPSA1?
FF3MR12KM1HHPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF3MR12KM1HHPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF3MR12KM1HHPSA1?
For technical support, including FF3MR12KM1HHPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF3MR12KM1HHPSA1 requirements.
6.How does Aetrix verify that FF3MR12KM1HHPSA1 is sourced from the original manufacturer or authorized distributors?
All FF3MR12KM1HHPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF3MR12KM1HHPSA1 meets industry standards.
7.What is the process for return or replacement of FF3MR12KM1HHPSA1?
All FF3MR12KM1HHPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF3MR12KM1HHPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF3MR12KM1HHPSA1 part is unused and in its original packaging.
Return procedure for FF3MR12KM1HHPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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