Infineon Technologies FS13MR12W2M1HPB11BPSA1
- Part No.:
- FS13MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
FS13MR12W2M1HPB11BPSA1.pdf
- Description:
- MOSFET
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Inventory:18
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Product details
Overview
FS13MR12W2M1HPB11BPSA1 from Infineon is a 1200 V, 63 A CoolSiC™ Trench MOSFET-based EasyPACK™ power module with integrated NTC thermistor, pre-applied thermal interface material (TIM), and PressFIT terminals. It delivers low switching losses (Eon = 1.76 mJ, Eoff = 1.15 mJ at Tvj = 175 °C), 13 nH stray inductance, and 1.19 K/W junction-to-heat-sink thermal resistance-designed for high-efficiency, high-frequency traction inverters and industrial DC/DC converters.
For engineers reviewing the FS13MR12W2M1HPB11BPSA1 datasheet, FS13MR12W2M1HPB11BPSA1 pinout, FS13MR12W2M1HPB11BPSA1 application, or FS13MR12W2M1HPB11BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, 62.5 A rated drain current, integrated temperature sensing (5 kΩ NTC), PressFIT mechanical reliability, and low-inductive layout for SiC-optimized gate drive.
Technical Context
This dual-channel half-bridge module integrates two 1200 V CoolSiC™ Trench MOSFETs with body diodes, each rated for 62.5 A continuous drain current and 125 A repetitive peak current. Its RDS(on) ranges from 11.7 mΩ (Tvj = 25 °C) to 25 mΩ (Tvj = 175 °C), enabling high-temperature operation up to 175 °C junction temperature.
The module embeds a Class 1 functional-isolated NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) and uses Al₂O₃ ceramic isolation (3.0 kV RMS, CTI > 200) with 1.19 K/W thermal resistance when used with Infineon's pre-applied TIM-supporting compact, high-power-density designs in EV chargers and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 800 V battery systems with ≥50 % voltage margin for transient overvoltage protection. |
| IDN | 62.5 A - Continuous conduction rating per switch at TH = 65 °C, defining base thermal design envelope. |
| RDS(on) | 11.7 mΩ (Tvj = 25 °C) - Low on-state loss supports <1.5 W conduction loss per switch at 62.5 A DC. |
| LsCE | 13 nH - Ultra-low stray inductance minimizes voltage overshoot and gate oscillation in fast SiC switching. |
| RthJH | 1.19 K/W - Valid only with Infineon pre-applied TIM; enables heat sink interface design without additional thermal paste validation. |
| NTC R25 | 5 kΩ ±5 % - Integrated temperature sensor calibrated for accurate junction temperature monitoring in closed-loop thermal management. |
| Isolation Voltage | 3.0 kV RMS - Meets IEC 60747 basic insulation requirements for industrial safety compliance. |
Pinout & Package
FS13MR12W2M1HPB11BPSA1 is housed in an EasyPACK™ 2B package (120 mm × 62.5 mm × 17 mm) with PressFIT solderless terminals and integrated mounting clamps. The module features a symmetrical half-bridge layout with isolated NTC terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side source / Low-side source | Common source connection point for both switches; electrically tied internally for half-bridge configuration. |
| N1, N2 | High-side drain / Low-side drain | Power output terminals-N1 connects to upper switch drain, N2 to lower switch drain; supports bidirectional current flow in inverter legs. |
| U, V | Phase output / AC terminal | Midpoint output node between high- and low-side switches; directly interfaces motor windings or transformer primary in inverter/DC-DC topologies. |
| G1, G2 | High-side gate / Low-side gate | Separated gate inputs with internal 7.5 Ω gate resistors; require independent isolated gate drivers due to floating high-side potential. |
| NTC1, NTC2 | NTC thermistor terminals | Functional-isolated 5 kΩ NTC pair referenced to module ground; enables real-time temperature feedback without compromising high-voltage isolation. |
Key Features
| Feature | Design Value |
|---|---|
| PressFIT contact technology | Eliminates wave soldering and reflow processes-reduces assembly thermal stress and improves long-term mechanical reliability in vibration-prone EV and industrial environments. |
| Pre-applied TIM | Validated thermal interface layer ensures consistent 1.19 K/W RthJH without operator-dependent paste application or void risk. |
| Integrated NTC sensor | 5 kΩ, B25/100 = 3433 K NTC embedded within module baseplate provides direct junction-temperature correlation for overtemperature shutdown and derating control. |
| Low-inductive layout | 13 nH stray inductance (LsCE) reduces dv/dt-induced gate ringing and EMI generation-critical for >100 kHz SiC switching in DC/DC and traction applications. |
| Al₂O₃ ceramic isolation | 3.0 kV RMS isolation with CTI > 200 meets IEC 60747 Class 1 requirements-enables safe operation in 1000 V DC bus systems with reinforced creepage/clearance. |
Applications
| EV Onboard Charger (OBC) | Industrial UPS Inverter |
|---|---|
Use Scenario: Bidirectional 11 kW OBC using dual-phase interleaved CLLC resonant topology operating at 200–500 kHz. IC Role / Device Role / Timing Role: Half-bridge power stage switch handling 800 V DC bus and 30 A RMS phase current with synchronous rectification control. Use Value: 1200 V rating and 1.76 mJ Eon at 175 °C enable >97 % peak efficiency while maintaining thermal headroom during 40 °C ambient + 30 K rise conditions. | Use Scenario: 30 kVA three-phase online UPS inverter stage with active front-end and IGBT/SiC hybrid modulation. IC Role / Device Role / Timing Role: High-side/low-side switching element in 600 V DC link inverter leg, delivering 50 Hz–1 kHz PWM with <1 µs dead-time control. Use Value: PressFIT terminals and integrated NTC allow rapid field replacement and real-time thermal derating-reducing mean time to repair (MTTR) by >40 % versus bolted modules. |
| Traction Inverter Auxiliary DC/DC | Renewable Energy Grid-Tie Converter |
Use Scenario: 3.3 kW isolated auxiliary DC/DC converter supplying 12 V/40 A to vehicle control units from 800 V battery. IC Role / Device Role / Timing Role: Primary-side SiC half-bridge switch operating at 300 kHz in phase-shifted full-bridge topology. Use Value: 13 nH LsCE and 7.5 Ω internal RG reduce gate driver complexity and eliminate external snubbers-cutting BOM count by 6 components per channel. | Use Scenario: 150 kW string inverter DC/AC stage with multilevel NPC topology feeding 690 V grid. IC Role / Device Role / Timing Role: Medium-voltage switching cell in T-type inverter leg, switching at 16 kHz with soft-commutation support. Use Value: 1.19 K/W RthJH with pre-applied TIM enables 25 % higher power density than comparable discrete SiC solutions-reducing heatsink volume by 320 cm³ per module. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS13MR12W2M1HPB11BPSA2 | Same die and package, but with alternate NTC calibration (B25/100 = 3411 K vs. 3433 K) and minor label code revision. | No functional difference in thermal monitoring accuracy (<0.5 °C error across -40 to 125 °C range). | Select when legacy BOM specifies PSA2 suffix; fully interchangeable in all designs. |
| FF6MR12W2M1B11BPSA1 | 650 V rating, 100 A IDN, lower RDS(on) (5.5 mΩ), no integrated NTC, different PressFIT footprint. | Targeted at 400 V battery systems (e.g., HEV/PHEV); lacks thermal sensing and requires external TIM application. | Choose only for cost-sensitive 650 V applications where NTC integration and TIM are not required. |
Compared with FS13MR12W2M1HPB11BPSA1, the PSA2 variant offers identical performance with traceability-level labeling differences, while the FF6MR12W2M1B11BPSA1 trades voltage rating and integrated sensing for higher current and lower conduction loss-making it unsuitable as a drop-in replacement in 800–1000 V systems requiring thermal monitoring.
Availability
FS13MR12W2M1HPB11BPSA1 is available at Aetrix Electronics and suitable for EV onboard chargers, industrial UPS inverters, and renewable energy grid-tie converters requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for FS13MR12W2M1HPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to the EasyPACK™ family of press-fit SiC power modules, engineered specifically for high-efficiency, high-power-density traction and industrial power conversion systems operating above 600 V DC bus.
FAQ
What is the maximum allowable baseplate temperature for continuous operation?
The datasheet specifies a maximum baseplate operating temperature (TBPmax) of 125 °C. Operation beyond this limit risks accelerated degradation of the Al₂O₃ isolation layer and NTC calibration drift. Thermal design must ensure baseplate temperature remains ≤125 °C under worst-case ambient and load conditions, verified via IR imaging or embedded NTC readings.
Can the integrated NTC be used for closed-loop thermal protection?
Yes-the NTC (R25 = 5 kΩ, B25/100 = 3433 K) is functionally isolated and calibrated for direct junction temperature estimation. When paired with a precision 10-bit ADC and lookup table (per AN2009-10), it enables ±1.2 °C accuracy from −40 °C to 125 °C, supporting real-time derating and fault shutdown.
Is PressFIT termination compatible with standard PCB thicknesses?
Yes-PressFIT pins are designed for 1.6 mm to 3.2 mm FR-4 PCBs with plated-through holes (PTH) per IPC-2221B. The contact force (40–80 N per clamp) ensures reliable gas-tight interconnection without solder, validated for 1000 thermal cycles (−40 °C to 125 °C) and 5 g RMS vibration per IEC 60068-2-64.
Does the module require external gate resistors in addition to the internal 7.5 Ω?
Yes-while each gate path includes a 7.5 Ω internal resistor, external gate resistors (typically 2.2–5.1 Ω) are required to control dv/dt, di/dt, and switching loss trade-offs. The internal resistor alone yields excessive turn-on speed (tr = 15 ns) risking shoot-through; external tuning ensures robust dead-time management and EMI compliance.
FS13MR12W2M1HPB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FS13MR12W2M1HPB11BPSA1 FAQ
1.How can I place an order for FS13MR12W2M1HPB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS13MR12W2M1HPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS13MR12W2M1HPB11BPSA1 reliable?
The price and inventory of FS13MR12W2M1HPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS13MR12W2M1HPB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FS13MR12W2M1HPB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS13MR12W2M1HPB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS13MR12W2M1HPB11BPSA1?
FS13MR12W2M1HPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS13MR12W2M1HPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS13MR12W2M1HPB11BPSA1?
For technical support, including FS13MR12W2M1HPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS13MR12W2M1HPB11BPSA1 requirements.
6.How does Aetrix verify that FS13MR12W2M1HPB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FS13MR12W2M1HPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS13MR12W2M1HPB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FS13MR12W2M1HPB11BPSA1?
All FS13MR12W2M1HPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FS13MR12W2M1HPB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS13MR12W2M1HPB11BPSA1 part is unused and in its original packaging.
Return procedure for FS13MR12W2M1HPB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FS13MR12W2M1HPB11BPSA1 Tags

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2N7002BKS,115
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