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Infineon Technologies FF6MR12KM1HPHPSA1
- Part No.:
- FF6MR12KM1HPHPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
FF6MR12KM1HPHPSA1.pdf
- Description:
- MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:10
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Product details
Overview
FF6MR12KM1HPHPSA1 from Infineon is a 62 mm C-Series power module integrating two 1200 V CoolSiC™ Trench MOSFETs in a half-bridge configuration, rated for 180 A continuous drain current and 360 A repetitive peak current, with pre-applied thermal interface material (TIM) and 4 kV AC insulation - deployed in high-efficiency DC/DC converters and EV DC fast chargers.
For engineers reviewing the FF6MR12KM1HPHPSA1 datasheet, FF6MR12KM1HPHPSA1 pinout, FF6MR12KM1HPHPSA1 application, or FF6MR12KM1HPHPSA1 equivalent, key selection criteria include RDS(on) of 5.5 mΩ at 25 °C, low 20 nH stray inductance, 0.227 K/W junction-to-heatsink thermal resistance with TIM, and gate drive compatibility with ±5 V to ±18 V logic-level control.
Technical Context
This module implements a dual-channel SiC MOSFET half-bridge topology optimized for high-frequency switching up to 100 kHz, featuring integrated body diodes with forward voltage as low as 3.95 V at 175 °C and 180 A. Its 62 mm footprint supports industrial-grade thermal cycling and mechanical robustness per IEC 60068.
The device uses Al2O3 ceramic isolation (class 1 basic insulation), 29 mm creepage to heatsink, and copper baseplate construction - enabling operation at maximum baseplate temperature of 125 °C and storage range from –40 °C to +125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - withstands DC bus voltages up to 1000 V in 3-phase rectified systems with safety margin. |
| IDN | 180 A - continuous conduction capability at TBP = 65 °C, supporting 100 kW+ converter stages. |
| RDS(on) | 5.5 mΩ @ 25 °C - enables <1.5 W conduction loss per switch at 100 A, critical for >99% efficiency targets. |
| Eon/Eoff | 3.6 / 3.3 mJ @ 175 °C - low energy loss per pulse allows 50–100 kHz switching without excessive die heating. |
| LsCE | 20 nH - minimized stray inductance reduces voltage overshoot and EMI in hard-switched topologies. |
| RthJH | 0.227 K/W - thermal resistance measured with IFX pre-applied TIM, enabling direct heatsink mounting without paste. |
| VGS(th) | 3.45–5.15 V - tightly distributed threshold ensures consistent turn-on behavior across temperature and unit variance. |
Pinout & Package
FF6MR12KM1HPHPSA1 is housed in a 62 mm C-Series industrial power module package with copper baseplate, Al2O3 isolation, and standardized screw-mount terminals (M6 for baseplate, M6 for power terminals).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P (Upper) | High-side source / Phase output | Common source node for upper MOSFET; connects to load/inductor in half-bridge output stage. |
| N (Lower) | Low-side source / Phase output | Common source node for lower MOSFET; forms complementary phase output with P terminal. |
| U+ | Upper MOSFET drain | Connects to DC+ bus; carries full phase current during upper switch conduction. |
| U− | Lower MOSFET drain | Connects to DC− bus; carries full phase current during lower switch conduction. |
| GH | Upper gate driver input | Isolated gate control signal for high-side switch; requires negative bias (–5 V) for reliable turn-off. |
| GL | Lower gate driver input | Gate control signal for low-side switch; referenced to N terminal (source potential). |
| SH | Upper source sense | Provides Kelvin connection for high-side source to enable accurate gate drive referencing and loss measurement. |
| SL | Lower source sense | Provides Kelvin connection for low-side source; decouples gate loop from power loop to reduce noise coupling. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 5.5 mΩ RDS(on), reducing conduction loss by ~40% vs. comparable Si IGBT modules. |
| Pre-applied thermal interface material (TIM) | Eliminates manual TIM dispensing; guarantees repeatable 0.227 K/W RthJH and avoids air gaps during production assembly. |
| 4 kV AC, 1 min isolation rating | Validated per IEC 60747; supports reinforced insulation requirements in EV charging and UPS safety standards. |
| Low 20 nH common-emitter stray inductance | Minimizes VDS overshoot during turn-off, allowing reduced snubber sizing and higher dv/dt tolerance (16.6 kV/µs). |
| Body diode with 3.95 V VSD @ 175 °C | Reduces freewheeling losses in synchronous rectification and ZVS soft-switching topologies versus SiC Schottky alternatives. |
Applications
| UPS Systems | Solar Inverters |
|---|---|
Use Scenario: Three-phase online double-conversion UPS delivering clean 50/60 Hz output from rectified AC or battery DC input. IC Role / Device Role / Timing Role: Half-bridge power stage in inverter leg, switching at 16–32 kHz to synthesize sinusoidal output waveform. Use Value: Low RDS(on) and Eoff sustain >98.5% system efficiency at partial load; 125 °C baseplate rating supports compact forced-air cooling. |
Use Scenario: Central or string solar inverters converting PV DC (800–1500 V) to grid-synchronized AC. IC Role / Device Role / Timing Role: Active clamp or three-level NPC inverter switch, operating at 10–25 kHz with unipolar PWM. Use Value: 1200 V VDSS accommodates 1500 V DC-link with margin; low QG (0.446 µC) eases gate driver design for high-density layouts. |
| EV DC Fast Chargers | Energy Storage DC/DC Converters |
Use Scenario: Liquid-cooled 150–350 kW bidirectional charger using dual-active-bridge (DAB) topology. IC Role / Device Role / Timing Role: Primary-side switch in DAB half-bridge, switching at 50–100 kHz with zero-voltage switching. Use Value: 360 A IDRM supports 2× peak current during transient load steps; pre-applied TIM ensures thermal reliability under 10,000+ thermal cycles. |
Use Scenario: High-power bi-directional DC/DC converter linking HV battery (600–1000 V) and LV auxiliary systems (12–48 V). IC Role / Device Role / Timing Role: Isolated full-bridge primary switch, operating at 100 kHz with phase-shifted PWM. Use Value: 20 nH LsCE and 0.227 K/W RthJH jointly enable >99% peak efficiency and <10 K temperature swing under 10 s overload pulses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed CMTZ2L090D2 | 1200 V / 180 A, but uses discrete die assembly; no pre-applied TIM; RDS(on) = 6.2 mΩ @ 25 °C. | Requires manual TIM application and tighter clamping force control; less suitable for high-volume automated assembly. | Select when custom thermal interface process is already qualified and lower gate charge (0.35 µC) is prioritized over assembly simplicity. |
| ROHM BSM180D12P2G001 | 1200 V / 180 A SiC module with integrated drivers; RDS(on) = 7.0 mΩ; no isolation certification beyond 2.5 kV AC. | Lacks 4 kV AC isolation and IEC 60747 validation; limited to non-safety-critical industrial drives. | Choose only for cost-sensitive, non-UL/IEC-certified systems where integrated gate drivers offset external driver BOM cost. |
Compared with CMTZ2L090D2 and BSM180D12P2G001, FF6MR12KM1HPHPSA1 uniquely combines certified 4 kV isolation, factory-applied TIM, and lowest RDS(on) in its class - making it the preferred choice for certified EV infrastructure and grid-tied renewable systems requiring zero field thermal process variation.
Availability
FF6MR12KM1HPHPSA1 is available at Aetrix Electronics and suitable for UPS systems, solar inverters, and EV DC fast chargers requiring stable component supply, long-lifecycle support, and traceable industrial-grade qualification.
Supply support for FF6MR12KM1HPHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered for high-power, high-frequency industrial and automotive traction applications demanding reliability, efficiency, and simplified thermal integration.
FAQ
What gate drive voltage is recommended for FF6MR12KM1HPHPSA1?
Infineon specifies +15 V to +18 V for turn-on and –5 V to 0 V for turn-off. A –5 V negative bias ensures robust immunity against Miller-induced false turn-on during high dv/dt switching events. Gate resistors of 3.9 Ω (turn-on) and 3.6 Ω (turn-off) are validated for optimal loss/EMI trade-off per datasheet Section 2.
Does FF6MR12KM1HPHPSA1 require external thermal interface material?
No. The module ships with Infineon's pre-applied Thermal Interface Material (TIM) on the copper baseplate, qualified for use with standard mounting torque (6 Nm for M6 screws). Adding extra TIM voids the thermal resistance specification and risks delamination under thermal cycling.
Can FF6MR12KM1HPHPSA1 be used in single-phase applications?
Yes - its half-bridge topology supports single-phase inverter, active front-end, or bidirectional DC/DC configurations. Designers must ensure gate drive isolation for the high-side switch and verify layout symmetry to maintain balanced current sharing between the two internal MOSFETs.
What is the maximum allowable baseplate temperature during continuous operation?
The datasheet specifies a maximum baseplate temperature (TBPmax) of 125 °C for continuous operation. Junction temperature may reach 175 °C under overload conditions, but sustained operation above 125 °C baseplate requires derating per the thermal curves in Section 2 and adherence to IEC 60068 thermal cycling limits.
FF6MR12KM1HPHPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FF6MR12KM1HPHPSA1 FAQ
1.How can I place an order for FF6MR12KM1HPHPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF6MR12KM1HPHPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF6MR12KM1HPHPSA1 reliable?
The price and inventory of FF6MR12KM1HPHPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF6MR12KM1HPHPSA1 is usually 5 days.
3.What payment methods are accepted for FF6MR12KM1HPHPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF6MR12KM1HPHPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF6MR12KM1HPHPSA1?
FF6MR12KM1HPHPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF6MR12KM1HPHPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF6MR12KM1HPHPSA1?
For technical support, including FF6MR12KM1HPHPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF6MR12KM1HPHPSA1 requirements.
6.How does Aetrix verify that FF6MR12KM1HPHPSA1 is sourced from the original manufacturer or authorized distributors?
All FF6MR12KM1HPHPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF6MR12KM1HPHPSA1 meets industry standards.
7.What is the process for return or replacement of FF6MR12KM1HPHPSA1?
All FF6MR12KM1HPHPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF6MR12KM1HPHPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF6MR12KM1HPHPSA1 part is unused and in its original packaging.
Return procedure for FF6MR12KM1HPHPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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