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Infineon Technologies FF4MR12W2M1HPB11BPSA1
- Part No.:
- FF4MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF4MR12W2M1HPB11BPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V AG-EASY2B
- Quantity:
- Payment:
- Shipping:
Inventory:17
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Product details
Overview
FF4MR12W2M1HPB11BPSA1 from Infineon is a 1200 V, 200 A dual-channel EasyDUAL™ power module integrating two CoolSiC™ Trench MOSFETs in a half-bridge configuration, with integrated NTC thermistor and pre-applied thermal interface material (TIM), designed for high-efficiency, high-frequency DC/DC converters and solar inverters.
For engineers reviewing the FF4MR12W2M1HPB11BPSA1 datasheet, FF4MR12W2M1HPB11BPSA1 pinout, FF4MR12W2M1HPB11BPSA1 application, or FF4MR12W2M1HPB11BPSA1 equivalent, key selection criteria include its 4 mΩ RDS(on) at 25 °C, 8 nH stray inductance, 0.266 K/W junction-to-heatsink thermal resistance, and PressFIT-compatible mounting for industrial-grade reliability in UPS and renewable energy systems.
Technical Context
This module implements a dual silicon carbide MOSFET half-bridge with independent source terminals and shared drain/collector layout optimized for low-inductance switching. Its gate drive compatibility requires ±5 V to ±18 V logic-level signals, with recommended VGS(on) = 15–18 V and VGS(off) = –5 to 0 V to ensure robust turn-on and suppression of parasitic turn-on.
The integrated NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) enables real-time temperature monitoring of the baseplate, while the pre-applied TIM and rugged clamping system support direct heatsink mounting without additional thermal paste or mechanical fasteners.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Maximum blocking voltage for use in medium-voltage solar and UPS DC-link applications |
| IDN | 200 A - Continuous rated current per switch, enabling compact 100 kW-class converter designs |
| RDS(on) | 4 mΩ @ 25 °C - Low conduction loss supporting >99% efficiency at high load currents |
| LsCE | 8 nH - Ultra-low stray inductance minimizing voltage overshoot during 30 kV/µs switching |
| Eoff | 0.84 mJ @ 25 °C - Low turn-off energy enabling 50–100 kHz operation without excessive heatsinking |
| RthJH | 0.266 K/W - Junction-to-heatsink thermal resistance enabling 175 °C max junction operation with forced-air cooling |
| R25 (NTC) | 5 kΩ ±5% - Integrated temperature sensing with B-value 3433 K for accurate baseplate thermal feedback |
Pinout & Package
FF4MR12W2M1HPB11BPSA1 uses the EasyDUAL™ 2L package (120 mm × 62.5 mm × 17 mm), featuring PressFIT-compatible copper baseplate terminals and isolated ceramic substrate with Al2O3 insulation (3.0 kV RMS isolation). Mounting clamps provide 40–80 N clamping force per side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC-link input | Parallel-connected high-current anode-side terminals for low-impedance bus connection |
| N1, N2 | Negative DC-link input | Parallel-connected cathode-side terminals tied to lower MOSFET sources |
| U, V, W | Phase output terminals | Three-phase output pins (U/V/W) routed to upper/lower MOSFET drains for inverter leg connection |
| S1, S2 | Source terminals (lower switch) | Isolated source connections for gate driver referencing and current sensing |
| G1, G2 | Gate terminals | Separated gate inputs for independent control of upper and lower SiC MOSFETs |
| NTC1, NTC2 | NTC thermistor leads | Dual-wire NTC interface for Kelvin-sense temperature measurement at baseplate |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V rating with 4 mΩ RDS(on), reducing conduction loss by ~40% vs. planar SiC equivalents |
| Integrated PressFIT contact system | Eliminates solder reflow and screw torque variability, enabling repeatable thermal contact over 10,000 thermal cycles |
| Pre-applied thermal interface material (TIM) | Reduces assembly time and interfacial thermal resistance by up to 30% vs. manual grease application |
| Low-inductive module layout (LsCE = 8 nH) | Minimizes switching voltage overshoot and EMI generation in high-di/dt applications (>8.8 kA/µs) |
| Integrated NTC thermistor (R25 = 5 kΩ) | Provides direct baseplate temperature feedback without external sensor placement or calibration |
Applications
| Solar Inverters | High-Frequency DC/DC Converters |
|---|---|
|
Use Scenario: Central and string inverters converting PV DC output to grid-synchronized AC, operating at 16–30 kHz switching frequency. IC Role / Device Role / Timing Role: Dual-channel SiC half-bridge power stage handling bidirectional energy flow and MPPT tracking under variable irradiance. Use Value: 0.84 mJ Eoff and 4 mΩ RDS(on) enable >98.5% peak efficiency across 20–100% load range while maintaining <125 °C baseplate temperature. |
Use Scenario: Isolated bi-directional DC/DC stages in EV charging infrastructure and energy storage systems. IC Role / Device Role / Timing Role: High-side/low-side switching cell in dual-active-bridge (DAB) topology, managing 800 V–400 V conversion with soft-switching control. Use Value: 8 nH stray inductance and 30 kV/µs dv/dt capability allow ZVS operation up to 100 kHz, reducing transformer size and magnetics losses. |
| Uninterruptible Power Supplies (UPS) | Industrial Motor Drives |
|
Use Scenario: Online double-conversion UPS systems requiring seamless transfer between utility and battery backup with <10 ms switchover. IC Role / Device Role / Timing Role: Inverter-stage power module delivering clean 50/60 Hz sine wave output under dynamic load transients. Use Value: 400 A IDRM peak current rating supports 200% overload for 10 s, ensuring ride-through during generator start-up or fault clearing. |
Use Scenario: Compact servo drives and HVAC inverters operating in harsh factory environments with ambient temperatures up to 65 °C. IC Role / Device Role / Timing Role: Three-phase inverter leg module controlling PMSM/IM motors with field-oriented control (FOC) at 10–20 kHz PWM. Use Value: Rugged PressFIT mounting and 125 °C max baseplate temperature rating ensure long-term reliability without thermal derating in enclosed cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF4MR12KM1HP_B11 | Same EasyDUAL™ 2L package but uses older CoolSiC™ Gen1 MOSFETs; RDS(on) = 5.5 mΩ @ 25 °C, Eoff = 1.12 mJ | Lower switching frequency ceiling (~40 kHz) due to higher losses; suitable for cost-sensitive 15–25 kHz UPS designs | Select when thermal margin is ample and gate driver complexity must be minimized (no negative bias required) |
| FS800R08A6P2B11 | 1200 V, 800 A dual IGBT module with anti-parallel diodes; no integrated NTC or TIM; RCE(sat) = 1.2 mΩ @ 25 °C | Higher conduction loss above 5 kHz; limited to <20 kHz operation; requires external temperature sensing | Choose only for legacy IGBT-based platforms where SiC redesign is not feasible and efficiency >97% is acceptable |
Compared with FF4MR12KM1HP_B11 and FS800R08A6P2B11, FF4MR12W2M1HPB11BPSA1 delivers superior high-frequency efficiency (≥98.5% at 50 kHz), integrated thermal monitoring, and simplified thermal assembly-making it optimal for next-generation solar, EV charging, and industrial UPS systems demanding compactness and reliability.
Availability
FF4MR12W2M1HPB11BPSA1 is available at Aetrix Electronics and suitable for solar inverters, high-frequency DC/DC converters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for FF4MR12W2M1HPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing facilities serving automotive, industrial, and renewable energy markets.
This part belongs to Infineon's CoolSiC™ EasyDUAL™ product line, engineered specifically for high-efficiency, high-power-density power conversion in solar, UPS, and industrial motor drive applications where SiC performance advantages over silicon are critical.
FAQ
What gate driver voltage is required for reliable operation?
FF4MR12W2M1HPB11BPSA1 requires VGS(on) = 15–18 V and VGS(off) = –5 to 0 V for optimal switching behavior and immunity to dv/dt-induced turn-on. Infineon's 1EDCxxI1xG and 2EDN752x families are validated drivers supporting these levels with integrated desaturation detection and Miller clamp functionality.
Does this module require external thermal interface material?
No. FF4MR12W2M1HPB11BPSA1 ships with pre-applied thermal interface material (TIM) on the copper baseplate, eliminating the need for manual grease application. The TIM is qualified for 10,000 thermal cycles and maintains <0.2 K·cm²/W interfacial resistance under standard mounting pressure.
How is the NTC thermistor calibrated and used in system design?
The integrated NTC has R25 = 5 kΩ ±5% and B25/100 = 3433 K, with full characterization provided in Infineon Application Note AN2021-13. It is mounted directly on the baseplate for accurate thermal coupling, and its two-wire Kelvin connection supports ratiometric ADC measurement without external compensation.
Can this module replace silicon IGBT modules in existing designs?
Yes-but with gate driver and layout modifications. FF4MR12W2M1HPB11BPSA1 operates at higher dV/dt and di/dt, requiring low-inductance gate loops, negative turn-off bias, and careful snubber design. Its 8 nH stray inductance and 3.0 kV isolation allow drop-in mechanical replacement in EasyDUAL™-compatible heatsinks, but electrical validation is mandatory.
FF4MR12W2M1HPB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 170A
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs:
- 594nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17600pF @ 800V
- Power - Max:
- 20mW
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY2B
FF4MR12W2M1HPB11BPSA1 FAQ
1.How can I place an order for FF4MR12W2M1HPB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF4MR12W2M1HPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF4MR12W2M1HPB11BPSA1 reliable?
The price and inventory of FF4MR12W2M1HPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF4MR12W2M1HPB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF4MR12W2M1HPB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF4MR12W2M1HPB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF4MR12W2M1HPB11BPSA1?
FF4MR12W2M1HPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF4MR12W2M1HPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF4MR12W2M1HPB11BPSA1?
For technical support, including FF4MR12W2M1HPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF4MR12W2M1HPB11BPSA1 requirements.
6.How does Aetrix verify that FF4MR12W2M1HPB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF4MR12W2M1HPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF4MR12W2M1HPB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF4MR12W2M1HPB11BPSA1?
All FF4MR12W2M1HPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF4MR12W2M1HPB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF4MR12W2M1HPB11BPSA1 part is unused and in its original packaging.
Return procedure for FF4MR12W2M1HPB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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