Infineon Technologies FF6MR20W2M1HB70BPSA1

Overview

FF6MR20W2M1HB70BPSA1 from Infineon is a 1200 V, 150 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 2.67 mJ, Eoff = 0.445 mJ at Tvj = 175 °C), 8 nH stray inductance, and 0.252 K/W junction-to-heat-sink thermal resistance - optimized for high-frequency DC/DC converters and solar inverters.

For engineers reviewing the FF6MR20W2M1HB70BPSA1 datasheet, FF6MR20W2M1HB70BPSA1 pinout, FF6MR20W2M1HB70BPSA1 application, or FF6MR20W2M1HB70BPSA1 equivalent, this module supports industrial-grade reliability per IEC 60747/60749/60068, features AlN substrate for low thermal resistance, and integrates PressFIT contact technology for robust mounting without soldering.

Technical Context

This module integrates two 1200 V CoolSiC™ Trench MOSFETs in a half-bridge configuration with co-packaged body diodes and an embedded NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K). Its gate drive requires VGS(on) = 15–18 V and VGS(off) = –5 to 0 V, with internal gate resistors (RGint = 1.4 Ω) and low input capacitance (CISS = 13.2 nF).

The module uses an AlN ceramic substrate (CTI > 200, RTI housing = 140 °C) and achieves isolation test voltage of 3.0 kV RMS (50 Hz, 1 min) between power and NTC circuits. Stray inductance is minimized to 8 nH, and lead resistance is 1.4 mΩ per switch at 25 °C.

Key Specifications

Pinout & Package

FF6MR20W2M1HB70BPSA1 is housed in an EasyDUAL™ 2B package (140 mm × 90 mm × 17 mm) with PressFIT terminals and integrated mounting clamps. The AlN-based substrate ensures mechanical ruggedness and low thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Compared with FF6MR12W2M1H_B70, this part adds NTC integration and PressFIT for field-replaceable thermal-aware designs; versus FS800R08A6P2B, it enables 1200 V operation and cuts switching losses by >75%, justifying its use in next-gen high-efficiency power conversion.

Availability

FF6MR20W2M1HB70BPSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial DC/DC converters, and uninterruptible power supply (UPS) systems requiring stable component supply across multi-year production cycles.

Supply support for FF6MR20W2M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D centers.

This module belongs to Infineon's EasyDUAL™ family of press-fit SiC power modules, engineered for high-reliability industrial power conversion where thermal performance, switching speed, and long-term stability are critical.

FAQ

What gate drive voltage range is required for reliable operation?

FF6MR20W2M1HB70BPSA1 requires VGS(on) = 15–18 V and VGS(off) = –5 to 0 V. Operating outside this range risks incomplete turn-on (increasing RDS(on) losses) or gate oxide stress. The internal 1.4 Ω gate resistor supports direct connection to standard isolated gate drivers without external series resistance.

How is thermal measurement performed using the integrated NTC?

The NTC (R25 = 5 kΩ, B25/100 = 3433 K) is mounted directly on the AlN substrate beneath the MOSFET dies. It provides a calibrated resistance-vs.-temperature curve traceable to AN2009-10, enabling accurate junction temperature estimation within ±2.5 °C when used with a precision 10 µA bias current and 16-bit ADC.

Can this module replace silicon IGBT modules in existing designs?

Yes - with gate drive and layout adaptations. Its 1200 V rating, 150 A current, and pin-compatible footprint to industry-standard EasyDUAL 2B packages allow drop-in mechanical replacement. However, gate timing must be adjusted for faster switching (31 ns td_on vs. ~200 ns for IGBTs) and negative turn-off bias must be implemented.

What is the maximum allowable mounting force per clamp?

The integrated mounting clamps are rated for 40–80 N per clamp. Exceeding 80 N risks ceramic substrate cracking or PressFIT terminal deformation. Torque specification for M5 screws is 3.5–4.5 N·m, and thermal interface material thickness must be maintained at 80–120 µm to preserve RthJH = 0.252 K/W.