Infineon Technologies F411MR12W2M1HPB76BPSA1

Overview

F411MR12W2M1HPB76BPSA1 from Infineon is a dual-channel 1200 V, 75 A CoolSiC™ Trench MOSFET half-bridge power module in EasyPACK™ 2B package with integrated NTC thermistor and pre-applied thermal interface material (TIM). It delivers low switching losses (Eon = 1.82 mJ, Eoff = 0.157 mJ at Tvj = 175 °C), 9 nH stray inductance, and RDS(on) = 23.1 mΩ at 175 °C - optimized for high-frequency DC/DC converters and EV DC chargers.

For engineers reviewing the F411MR12W2M1HPB76BPSA1 datasheet, F411MR12W2M1HPB76BPSA1 pinout, F411MR12W2M1HPB76BPSA1 application, or F411MR12W2M1HPB76BPSA1 equivalent, key selection criteria include gate drive compatibility (±3/18 V recommended), PressFIT mounting constraints, junction-to-heat-sink thermal resistance (0.875 K/W with IFX TIM), and NTC calibration (R25 = 5 kΩ, B25/100 = 3433 K).

Technical Context

This module integrates two symmetric CoolSiC™ Trench MOSFETs in a half-bridge configuration with co-packaged body diodes and an embedded NTC thermistor. Its low-inductive layout (LsCE = 9 nH) and optimized gate charge (QG = 0.223 µC) enable operation up to 100 kHz with minimal voltage overshoot and dv/dt-induced turn-on risk.

The PressFIT contact system eliminates soldering, while pre-applied TIM ensures repeatable thermal performance under 40–80 N clamp force. The NTC provides real-time baseplate temperature monitoring (TBPmax = 125 °C), and isolation meets IEC 61140 Class 1 requirements (VISOL = 3.0 kV RMS).

Key Specifications

Pinout & Package

EasyPACK™ 2B package (140 mm × 62 mm × 17 mm), press-fit terminal design with 12 solderless pins: 2× power input (P+/P−), 2× output (OUT1/OUT2), 2× gate (G1/G2), 2× source (S1/S2), 2× NTC (T+/T−), and 2× auxiliary (AUX1/AUX2) for Kelvin sensing or clamping. Mounting clamps ensure mechanical robustness under vibration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Compared with FF600R12ME4 and FS800R07A2E3_B11, F411MR12W2M1HPB76BPSA1 uniquely combines 1200 V capability, integrated NTC+TIM, and 9 nH stray inductance - making it the only choice for compact, high-frequency, maintenance-free 800 V DC/DC converters.

Availability

F411MR12W2M1HPB76BPSA1 is available at Aetrix Electronics and suitable for EV DC fast charging, industrial UPS systems, and renewable energy DC/DC converters requiring stable component supply across multi-year production programs.

Supply support for F411MR12W2M1HPB76BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the EasyPACK™ family of press-fit SiC power modules, engineered specifically for high-efficiency, high-power-density industrial and automotive power conversion systems operating above 50 kHz.

FAQ

What gate driver voltage is recommended for reliable operation?

Infineon recommends VGS(on) = +15 to +18 V and VGS(off) = −5 to 0 V. A −3 V negative turn-off bias suppresses parasitic turn-on during high dv/dt events, while +18 V minimizes RDS(on) and conduction loss. Gate drive must comply with AN 2021-13 for lifetime reliability at Tvj > 150 °C.

Is the NTC thermistor calibrated and what is its accuracy?

The integrated NTC has R25 = 5 kΩ ±5% and B25/100 = 3433 K, with deviation ≤±5% at 100 °C. Accuracy is ±1.5 °C from −40 to 125 °C when used with standard 2-wire measurement and linearization per AN 2009-10. No factory calibration certificate is shipped, but characterization data is in the datasheet.

Can this module be mounted without thermal interface material?

No - the module is qualified only with Infineon's pre-applied TIM (IFX type). Omitting TIM or substituting third-party paste voids the 0.875 K/W RthJH rating and risks thermal runaway at >75 A. Mounting force must be 40–80 N per clamp to ensure TIM conformity and void-free contact.

What is the maximum allowable baseplate temperature during overload?

TBPmax = 125 °C is the absolute maximum continuous baseplate temperature. Short-term overload (≤10 s) permits Tvj up to 175 °C, but baseplate temperature must remain ≤125 °C to avoid degradation of TIM adhesion and NTC drift. Thermal shutdown is required if TBP exceeds 120 °C for >60 s.