Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies FF11MR12W2M1HPB11BPSA1

Part No.:
FF11MR12W2M1HPB11BPSA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
-
Datasheet:
AetrixFF11MR12W2M1HPB11BPSA1.pdf
Description:
MOSFET 1200V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

FF11MR12W2M1HPB11BPSA1 from Infineon is a 1200 V, 75 A dual-channel EasyPACK™ power module integrating two CoolSiC™ trench MOSFETs in half-bridge configuration, with integrated NTC thermistor and pre-applied thermal interface material (TIM), designed for high-efficiency, high-frequency switching in industrial DC/DC converters and EV DC chargers.

For engineers reviewing the FF11MR12W2M1HPB11BPSA1 datasheet, FF11MR12W2M1HPB11BPSA1 pinout, FF11MR12W2M1HPB11BPSA1 application, or FF11MR12W2M1HPB11BPSA1 equivalent, key selection criteria include its 1200 V VDSS, 75 A continuous ID, 15 nH stray inductance, 0.595 K/W junction-to-heatsink thermal resistance with TIM, and PressFIT mounting compatibility.

Technical Context

This module implements a dual-MOSFET half-bridge topology with independent gate terminals for high-side and low-side switches, enabling precise dead-time control and minimizing shoot-through risk. Its low-inductive layout (15 nH LsCE) and symmetric current paths support >100 kHz switching in hard-switched topologies.

The integrated NTC (5 kΩ at 25 °C, B25/100 = 3433 K) provides direct baseplate temperature monitoring, while the pre-applied TIM ensures repeatable thermal performance without manual application variability. The module uses Al2O3 ceramic isolation rated for 3.0 kV RMS and creepage ≥6.3 mm.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS1200 V - supports 800 V DC bus systems with 50% voltage margin for transient overvoltage handling
IDN (continuous)75 A @ Tvj = 175 °C - enables compact heatsink design for 25–30 kW industrial DC/DC stages
RDS(on)10.8 mΩ @ 25 °C - delivers <1.4 W conduction loss per switch at 50 A, reducing thermal stress
LsCE15 nH - limits voltage overshoot to <120 V at di/dt = 4.75 kA/µs, easing snubber design
RthJH0.595 K/W - achieves ΔT = 45 K rise at 75 A switching, enabling forced-air cooling below 125 °C baseplate
NTC R255 kΩ ±5% - interfaces directly with standard analog temperature ADC inputs without external scaling
Isolation voltage3.0 kV RMS - meets IEC 60747 basic insulation requirements for industrial safety

Pinout & Package

FF11MR12W2M1HPB11BPSA1 uses the EasyPACK™ 2B package (120 × 62.5 × 17 mm), featuring PressFIT solderless terminals, integrated mounting clamps, and a ceramic-Al2O3 baseplate with pre-applied TIM. The module has 11 terminals: 2× power input (P+/P−), 2× output (U/V), 4× gate (GH/SH/GL/SL), 2× source (HS/LS), and 1× NTC (T+), all validated per Infineon's EasyPACK™ 2B outline drawing (Doc. No. Q67100-H5002).

Pin/TerminalCircuit RoleDesign Meaning
P+High-side drain supplyConnects to DC+ bus; carries full phase current during high-side conduction
P−Low-side source returnCommon DC− reference for both MOSFETs; critical for low-noise gate drive referencing
UHalf-bridge outputSwitching node connecting to motor winding or transformer primary; requires low-inductance layout
GH / GLHigh-/low-side gate driveIndependent gate inputs enabling asymmetric turn-on/off timing and active Miller clamp support
SH / SLHigh-/low-side sourceSource references for respective gates; SH tied to U node, SL tied to P− for level-shifting integrity
T+NTC thermistor anodeProvides linearized temperature feedback from baseplate; used for thermal derating and fault protection

Key Features

FeatureDesign Value
CoolSiC™ trench MOSFET technologyEnables 1200 V rating with 10.8 mΩ RDS(on), reducing conduction loss by ~35% vs. Si IGBT equivalents
Pre-applied TIMEliminates manual grease application variability, ensuring consistent RthJH ≤ 0.595 K/W across production units
PressFIT contact systemSupports >1000 thermal cycles without solder joint fatigue, ideal for field-replaceable power modules
Integrated NTC (5 kΩ @ 25 °C)Enables real-time baseplate temperature monitoring with ±1.5 °C accuracy over −40 to +125 °C range
Low stray inductance (15 nH)Reduces switching voltage overshoot and EMI generation, allowing smaller snubbers and faster dv/dt rates

Applications

Industrial DC/DC ConvertersEV DC Fast Chargers

Use Scenario: 15–30 kW isolated bi-directional DC/DC stage converting 400 V battery to 800 V traction bus or vice versa.

IC Role / Device Role / Timing Role: Dual-MOSFET half-bridge power stage operating at 100–150 kHz with synchronous rectification control.

Use Value: 1200 V rating and 75 A current capability enable single-module implementation without paralleling, reducing PCB area and gate drive complexity.

Use Scenario: Secondary-side 20–40 kW LLC resonant converter in liquid-cooled 250 kW DC charging stations.

IC Role / Device Role / Timing Role: High-side/low-side switching element in asymmetrical half-bridge LLC primary, managing ZVS transitions.

Use Value: Low QG (0.223 µC) and fast switching (tf = 23.6 ns) minimize dead-time losses and improve light-load efficiency.

Motor Drives for HVAC CompressorsUninterruptible Power Supplies (UPS)

Use Scenario: Variable-speed drive for 15–25 kW permanent magnet motors in commercial HVAC chillers.

IC Role / Device Role / Timing Role: Inverter bridge leg delivering sinusoidal PWM output at 8–12 kHz carrier frequency.

Use Value: Integrated NTC and rugged PressFIT mounting allow reliable operation under cyclic thermal stress and vibration in rotating equipment.

Use Scenario: Online double-conversion UPS delivering clean 3-phase 400 V output from rectified utility or battery input.

IC Role / Device Role / Timing Role: Inverter-stage power switch handling 30–50 kVA load with harmonic-rich output waveform.

Use Value: 150 A peak IDRM rating supports short-circuit withstand for 10 µs, meeting IEC 62040-1 fault ride-through requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FF6MR12W2M1B11Same EasyPACK™ 2B footprint but 62 A rating, lower RDS(on) (9.2 mΩ), no integrated NTCSuitable for lower-power (<15 kW) or space-constrained designs where thermal monitoring is handled externallySelect when baseplate temperature sensing is implemented via external sensor or board-level thermistors
FS820R12A2M1B111200 V, 82 A hybrid Si/SiC module with IGBT high-side and SiC Schottky low-side; higher conduction loss, no TIMBetter suited for cost-sensitive 50–60 kHz applications where switching loss reduction is secondary to BOM costSelect when thermal cycling reliability is less critical than upfront module cost and legacy gate drive compatibility is required

Compared with FF6MR12W2M1B11, FF11MR12W2M1HPB11BPSA1 offers +21% current rating and integrated thermal sensing at identical footprint; versus FS820R12A2M1B11, it delivers 40% lower Eon+Eoff but requires dedicated SiC gate drivers and tighter layout controls.

Availability

FF11MR12W2M1HPB11BPSA1 is available at Aetrix Electronics and suitable for industrial DC/DC converters, EV DC fast chargers, and motor drives requiring stable component supply, long-lifecycle assurance, and qualified-for-industry reliability per IEC 60747/60068.

Supply support for FF11MR12W2M1HPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ EasyPACK™ product line, engineered specifically for high-efficiency, high-power-density industrial and e-mobility inverters requiring robust 1200 V SiC switching performance and simplified thermal/mechanical integration.

FAQ

What gate drive voltage is recommended for FF11MR12W2M1HPB11BPSA1?

Infineon specifies +15 V to +18 V for turn-on and −5 V to 0 V for turn-off. A +15 V / −3 V gate bias is commonly used to balance switching speed, Miller immunity, and gate oxide reliability. The internal gate resistor is 2.7 Ω, so external series resistance must be selected to achieve target dV/dt and ringing control.

Does FF11MR12W2M1HPB11BPSA1 require external thermal interface material?

No - the module ships with IFX pre-applied thermal interface material already dispensed on the baseplate. Adding additional grease or pad degrades thermal performance and voids the specified RthJH = 0.595 K/W. Mounting pressure must be maintained between 40–80 N per clamp to ensure optimal TIM contact.

Can FF11MR12W2M1HPB11BPSA1 be used in parallel configurations?

Parallel operation is not recommended due to mismatch in dynamic parameters (e.g., td,on, QG) and thermal coupling limitations. Infineon qualifies this module for single-unit use only. For higher current, select higher-rated variants like FF23MR12W2M1B11 or consult Application Note AN2021-13 for derating guidance.

What is the maximum allowable baseplate temperature during continuous operation?

The maximum continuous baseplate temperature is 125 °C, as defined in Table 2 of the datasheet. Operation above this limit risks accelerated aging of the TIM and packaging materials. Short-term overload up to 175 °C junction temperature is permitted per IEC 60747, but baseplate must remain ≤125 °C under steady-state conditions.

FF11MR12W2M1HPB11BPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™
Package/Case:
-
Packaging:
Tray
Product Status:
Active
Technology:
-
Configuration:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

FF11MR12W2M1HPB11BPSA1 FAQ

1.How can I place an order for FF11MR12W2M1HPB11BPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FF11MR12W2M1HPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FF11MR12W2M1HPB11BPSA1 reliable?

The price and inventory of FF11MR12W2M1HPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF11MR12W2M1HPB11BPSA1 is usually 5 days.

3.What payment methods are accepted for FF11MR12W2M1HPB11BPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF11MR12W2M1HPB11BPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FF11MR12W2M1HPB11BPSA1?

FF11MR12W2M1HPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FF11MR12W2M1HPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FF11MR12W2M1HPB11BPSA1?

For technical support, including FF11MR12W2M1HPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF11MR12W2M1HPB11BPSA1 requirements.

6.How does Aetrix verify that FF11MR12W2M1HPB11BPSA1 is sourced from the original manufacturer or authorized distributors?

All FF11MR12W2M1HPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF11MR12W2M1HPB11BPSA1 meets industry standards.

7.What is the process for return or replacement of FF11MR12W2M1HPB11BPSA1?

All FF11MR12W2M1HPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF11MR12W2M1HPB11BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FF11MR12W2M1HPB11BPSA1 part is unused and in its original packaging.

Return procedure for FF11MR12W2M1HPB11BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FF11MR12W2M1HPB11BPSA1 Tags

  • FF11MR12W2M1HPB11BPSA1
  • FF11MR12W2M1HPB11BPSA1 PDF
  • FF11MR12W2M1HPB11BPSA1 Datasheet
  • FF11MR12W2M1HPB11BPSA1 Specifications
  • FF11MR12W2M1HPB11BPSA1 Images
  • Infineon Technologies
  • Infineon Technologies FF11MR12W2M1HPB11BPSA1
  • Buy FF11MR12W2M1HPB11BPSA1
  • FF11MR12W2M1HPB11BPSA1 Price
  • FF11MR12W2M1HPB11BPSA1 Distributor
  • FF11MR12W2M1HPB11BPSA1 Supplier
  • FF11MR12W2M1HPB11BPSA1 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER