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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies FF17MR12W1M1HPB11BPSA1

Name: FF17MR12W1M1HPB11BPSA1
Brand: Infineon Technologies
SKU: FF17MR12W1M1HPB11BPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FF17MR12W1M1HPB11BPSA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: Module

Datasheet:: FF17MR12W1M1HPB11BPSA1.pdf

Description:: MOSFET 1200V AG-EASY1B

Quantity:: RFQ Add To RFQ list

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Inventory:24

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Product details

Overview

FF17MR12W1M1HPB11BPSA1 from Infineon is a 1200 V, 50 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and pre-applied thermal interface material (TIM), designed for high-efficiency, high-frequency switching in industrial DC/DC converters and EV DC chargers.

For engineers reviewing the FF17MR12W1M1HPB11BPSA1 datasheet, FF17MR12W1M1HPB11BPSA1 pinout, FF17MR12W1M1HPB11BPSA1 application, or FF17MR12W1M1HPB11BPSA1 equivalent, key selection criteria include its 9 nH stray inductance, 0.748 K/W junction-to-heat-sink thermal resistance (with TIM), 16.2 mΩ R_DS(on) at 25 °C, and PressFIT mounting compatibility for vibration-resistant industrial deployment.

Technical Context

This module integrates two 1200 V CoolSiC™ MOSFETs in a half-bridge configuration with co-packaged body diodes and an embedded NTC thermistor (R₂₅ = 5 kΩ, B_25/100 = 3433 K). Its low-inductive layout (L_sCE = 9 nH) and optimized gate drive path support fast switching (t_on = 36 ns, t_off = 54–60 ns) with minimal EMI generation.

The module uses Al₂O₃ ceramic substrate for 3.0 kV RMS isolation (IEC 61140 Class 1 basic insulation), rated for continuous operation up to 125 °C baseplate temperature and transient junction temperatures up to 175 °C, validated per IEC 60747, 60749, and 60068 standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 800 V DC bus systems with 50 % voltage margin for surge and ringing.
I_DN / I_DRM	50 A continuous / 100 A peak - Supports 25 A rms per pin under sustained load with derating above 90 °C heatsink.
R_DS(on)	16.2 mΩ @ 25 °C - Delivers <1.3 W conduction loss per MOSFET at 50 A, critical for >98 % DC/DC efficiency.
L_sCE	9 nH - Reduces voltage overshoot during turn-off, enabling higher dv/dt tolerance without snubbers.
R_thJH	0.748 K/W - Achieved only with IFX pre-applied TIM; enables compact heatsink design for 50 A operation at ≤125 °C baseplate.
NTC R₂₅	5 kΩ ±5 % - Provides accurate die temperature monitoring across -40 to 125 °C range for thermal shutdown and derating control.
Isolation Voltage	3.0 kV RMS - Meets reinforced insulation requirements for industrial UPS and EV charger safety compliance.

Pinout & Package

FF17MR12W1M1HPB11BPSA1 uses the EasyDUAL 2B package (140 mm × 90 mm × 17 mm), featuring PressFIT-compatible power terminals (P+, P−, AC), gate pins (G1/G2, S1/S2), NTC terminals (T+, T−), and integrated mounting clamps. The module includes pre-applied TIM on the baseplate and an Al₂O₃ insulating substrate.

Pin/Terminal	Circuit Role	Design Meaning
P+	High-side source connection	Carries full DC link current into upper MOSFET; PressFIT contact ensures low-resistance, solderless interconnect.
P−	Low-side drain connection	Common return path for both MOSFETs; shared thermal and electrical node for half-bridge output reference.
AC	Half-bridge AC output	Switching node connecting to transformer primary or filter inductor; low-inductance path minimizes EMI.
G1, S1	Upper MOSFET gate drive	Isolated gate input pair with dedicated Kelvin source (S1) for precise V_GS control and reduced Miller effect.
G2, S2	Lower MOSFET gate drive	Independent gate loop with Kelvin source (S2); enables asymmetric gate drive timing for shoot-through prevention.
T+, T−	NTC thermistor terminals	Two-wire analog temperature sensing interface compatible with standard ADC inputs; calibrated for ±1.5 °C accuracy over 0–100 °C.

Key Features

Feature	Design Value
CoolSiC™ Trench MOSFET technology	Enables 1200 V rating with 16.2 mΩ R_DS(on), reducing conduction loss by 35 % vs. Si IGBTs in 10–100 kHz DC/DC topologies.
Integrated NTC thermistor (5 kΩ @ 25 °C)	Eliminates external sensor placement and calibration; provides direct die-temperature feedback for real-time thermal management.
Pre-applied thermal interface material (TIM)	Guarantees 0.748 K/W R_thJH without manual TIM application-reducing assembly variability and thermal resistance uncertainty.
PressFIT contact system	Enables tool-free, solderless PCB mounting with 20–50 N clamp force; maintains mechanical integrity under 50 g vibration per IEC 60068-2-6.
Low stray inductance (9 nH)	Reduces switching voltage overshoot below 100 V at 50 A/100 ns dI/dt, allowing safe operation without RC snubbers in high-frequency designs.

Applications

Industrial DC/DC Converters

EV Onboard DC Chargers

Use Scenario: 15 kW isolated bidirectional DC/DC stage converting 400 V battery to 800 V traction bus in vehicle-to-grid systems.

IC Role / Device Role / Timing Role: Dual-channel SiC MOSFET half-bridge switching device controlling power flow direction and regulating output voltage via phase-shifted PWM.

Use Value: 9 nH stray inductance and 1.02 mJ E_off at 175 °C enable 100 kHz operation with <1.5 % efficiency penalty versus theoretical limit.

Use Scenario: 22 kW liquid-cooled DC fast charging station converting 480 V AC grid to 200–1000 V DC output for EV batteries.

IC Role / Device Role / Timing Role: Primary-side switching element in dual-active-bridge (DAB) topology, handling 50 A rms at 100 kHz with synchronous rectification on secondary side.

Use Value: Integrated NTC and 0.748 K/W R_thJH allow closed-loop thermal derating to maintain 175 °C junction limit during 30-minute continuous 22 kW operation.

Uninterruptible Power Supplies

Renewable Energy Inverters

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 750 V DC bus during grid failure, with <10 ms switchover.

IC Role / Device Role / Timing Role: Half-bridge inverter stage driving LC filter; operates in hard-switched mode with active clamping for zero-voltage switching assist.

Use Value: 1200 V V_DSS and 100 A I_DRM withstand 1.5× overload for 10 s during generator start-up transients without desaturation.

Use Scenario: 15 kW string inverter converting PV array DC output to 400 V AC grid, operating at 99.2 % peak efficiency.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC topology; leverages body diode conduction during freewheeling intervals.

Use Value: Body diode forward voltage of 3.8 V @ 175 °C reduces freewheeling losses by 22 % compared to discrete Si diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FF300R12ME4_B11	1200 V, 300 A single-channel module; larger footprint, higher current rating, no integrated NTC.	Suitable for higher-power inverters (>50 kW); requires external temperature sensing and custom TIM application.	Select when scaling beyond 50 A rms and thermal monitoring can be implemented externally.
FS250R12A1T4_B11	1200 V, 250 A dual-channel Si IGBT module; higher conduction loss (2.2 V V_CE(sat)), slower switching (t_off > 300 ns).	Better suited for <20 kHz applications where EMI filtering cost outweighs efficiency gain; lower gate drive complexity.	Select for cost-sensitive industrial drives where 97 % efficiency is acceptable and thermal cycling stress is dominant.

Compared with FF300R12ME4_B11 and FS250R12A1T4_B11, FF17MR12W1M1HPB11BPSA1 delivers optimal balance of 50 A capability, integrated thermal sensing, ultra-low inductance, and plug-and-play TIM-making it the preferred choice for space-constrained, high-frequency, thermally managed 15–30 kW systems.

Availability

FF17MR12W1M1HPB11BPSA1 is available at Aetrix Electronics and suitable for industrial DC/DC converters, EV onboard DC chargers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for FF17MR12W1M1HPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ EasyDUAL™ product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, renewable energy, and electric mobility applications demanding compact size, low thermal resistance, and integrated monitoring.

FAQ

What gate drive voltage is recommended for reliable operation?

Infineon specifies +15 V to +18 V for turn-on and –5 V to 0 V for turn-off. Using +18 V minimizes R_DS(on) and conduction loss, while –5 V ensures robust noise immunity and prevents spurious turn-on during high dv/dt events. Gate resistors must be selected per AN 2021-13 to limit peak current and control switching speed.

Does this module require external thermal interface material?

No. FF17MR12W1M1HPB11BPSA1 ships with Infineon's pre-applied TIM on the baseplate. Applying additional TIM voids the guaranteed 0.748 K/W R_thJH specification and risks uneven pressure distribution. Mounting must follow Infineon's torque and clamp-force guidelines (20–50 N per clamp) to ensure full TIM contact.

Can the integrated NTC be used for closed-loop thermal protection?

Yes. The NTC (5 kΩ @ 25 °C, B_25/100 = 3433 K) provides direct die-temperature correlation. When paired with a precision 10-bit+ ADC and lookup table calibrated per AN 2018-09, it enables real-time junction temperature estimation within ±1.5 °C-sufficient for dynamic derating and overtemperature shutdown at 165 °C.

What is the maximum allowable baseplate temperature during continuous operation?

The datasheet specifies a maximum baseplate temperature (T_BPmax) of 125 °C for continuous operation. Exceeding this value risks accelerated aging of the Al₂O₃ substrate and silicone gel encapsulation. Short-term overload (≤2 min) up to 135 °C is permissible if junction temperature remains ≤175 °C and thermal cycling is limited per IEC 60749.

FF17MR12W1M1HPB11BPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: Module

Packaging:: Tray

Product Status:: Active

Technology:: Silicon Carbide (SiC)

Configuration:: -

FET Feature:: -

Drain to Source Voltage (Vdss):: 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: -

Power - Max:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: AG-EASY1B

FF17MR12W1M1HPB11BPSA1 FAQ

1.How can I place an order for FF17MR12W1M1HPB11BPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FF17MR12W1M1HPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FF17MR12W1M1HPB11BPSA1 reliable?

The price and inventory of FF17MR12W1M1HPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF17MR12W1M1HPB11BPSA1 is usually 5 days.

3.What payment methods are accepted for FF17MR12W1M1HPB11BPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF17MR12W1M1HPB11BPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FF17MR12W1M1HPB11BPSA1?

FF17MR12W1M1HPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FF17MR12W1M1HPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FF17MR12W1M1HPB11BPSA1?

For technical support, including FF17MR12W1M1HPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF17MR12W1M1HPB11BPSA1 requirements.

6.How does Aetrix verify that FF17MR12W1M1HPB11BPSA1 is sourced from the original manufacturer or authorized distributors?

All FF17MR12W1M1HPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF17MR12W1M1HPB11BPSA1 meets industry standards.

7.What is the process for return or replacement of FF17MR12W1M1HPB11BPSA1?

All FF17MR12W1M1HPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF17MR12W1M1HPB11BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FF17MR12W1M1HPB11BPSA1 part is unused and in its original packaging.

Return procedure for FF17MR12W1M1HPB11BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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