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Infineon Technologies FF6MR12W2M1HB11BPSA1
- Part No.:
- FF6MR12W2M1HB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF6MR12W2M1HB11BPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V 145A MODULE
- Quantity:
- Payment:
- Shipping:
Inventory:18
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Product details
Overview
FF6MR12W2M1HB11BPSA1 from Infineon is a 1200 V, 150 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 2.67 mJ, Eoff = 0.445 mJ at Tvj = 175 °C), 8 nH stray inductance, and 0.346 K/W junction-to-heatsink thermal resistance - optimized for high-frequency DC/DC converters and solar inverters requiring high current density and rugged industrial mounting.
For engineers reviewing the FF6MR12W2M1HB11BPSA1 datasheet, FF6MR12W2M1HB11BPSA1 pinout, FF6MR12W2M1HB11BPSA1 application, or FF6MR12W2M1HB11BPSA1 equivalent, this module's validated PressFIT contact reliability, integrated temperature sensing (R25 = 5 kΩ NTC), and gate drive compatibility with Infineon's 1ES0535/1ED312x families are critical selection criteria.
Technical Context
This dual-MOSFET module integrates two 1200 V / 150 A SiC trench devices in a half-bridge configuration with shared source and independent gate terminals. Its low RDS(on) (5.4–11.6 mΩ across 25–175 °C) and fast switching (td(on) = 32 ns, tf = 16 ns at 175 °C) enable >100 kHz operation in isolated DC/DC topologies.
The module embeds a calibrated NTC thermistor (B25/100 = 3433 K, ±5% R100 deviation) directly adjacent to the die, enabling real-time junction temperature estimation. Stray inductance is minimized to 8 nH via symmetric, low-inductance internal busbar layout - critical for dV/dt immunity and EMI control in high dv/dt applications like solar string inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports 1000 V DC-link systems with 20% safety margin per IEC 62109. |
| IDN | 150 A - continuous rated current per switch at TH = 65 °C, enabling compact heatsink sizing. |
| RDS(on) | 5.4 mΩ (typ., 25 °C) - enables <1.2 W conduction loss per switch at 100 A RMS. |
| Eon / Eoff | 2.67 mJ / 0.445 mJ (Tvj = 175 °C) - enables >100 kHz switching with <15 W total switching loss per switch. |
| LsCE | 8 nH - limits voltage overshoot to <48 V at di/dt = 6 kA/µs, reducing snubber requirements. |
| NTC R25 | 5 kΩ ±1% - provides linearized temperature readout from -40 to 125 °C using standard ADC circuits. |
| RthJH | 0.346 K/W - allows 175 °C max junction operation with ≤65 °C heatsink temperature at full load. |
Pinout & Package
FF6MR12W2M1HB11BPSA1 uses the EasyDUAL 2B package (140 mm × 90 mm × 17 mm), featuring PressFIT solderless terminals and integrated mounting clamps for direct heatsink attachment without screws. The module includes 12 terminals: 2× power input (P+/P−), 2× output (T1/T2), 2× gate (G1/G2), 2× emitter (E1/E2), 2× source (S1/S2), plus 2× NTC pins (T+, T−).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P+ | High-side DC-link anode | Carries full module current into upper MOSFET; rated for 300 A peak per IEC 60747. |
| P− | Low-side DC-link cathode | Common return path for both switches; low-inductance connection minimizes ground bounce. |
| T1 | Upper switch output | Half-bridge AC output node; connects to transformer primary or motor phase in inverter mode. |
| T2 | Lower switch output | Second half-bridge output; used in complementary PWM for bidirectional energy flow. |
| G1, G2 | Gate drive inputs | Isolated gate terminals accepting ±5/18 V logic; internal RGint = 1.4 Ω reduces external gate resistor count. |
| E1, E2 | Emitter reference | Separate emitter pins enable Kelvin-source sensing for precise current monitoring and desat detection. |
| S1, S2 | Source connections | Power source nodes tied internally to emitter; used for high-current return paths. |
| T+, T− | NTC thermistor terminals | Provide 2-wire analog temperature feedback; compatible with Infineon's TLE4998 or discrete op-amp conditioning. |
Key Features
| Feature | Design Value |
|---|---|
| PressFIT contact technology | Eliminates solder reflow process; achieves >40 N clamp force per terminal with <0.1 mΩ contact resistance over 1000 thermal cycles. |
| Integrated NTC thermistor | Calibrated 5 kΩ @ 25 °C with B25/100 = 3433 K enables ±1.5 °C temperature accuracy from −40 to +125 °C. |
| Low stray inductance (8 nH) | Reduces voltage spikes during turn-off, allowing gate resistors as low as 0.51 Ω without oscillation. |
| Rugged mounting clamps | Integrated steel clamps distribute 40–80 N mounting force uniformly across ceramic baseplate, preventing Al₂O₃ substrate cracking. |
| CoolSiC™ Trench MOSFET | Enables 175 °C continuous operation with <10% RDS(on) drift over 10-year lifetime at rated current. |
Applications
| Solar String Inverter | Industrial UPS |
|---|---|
|
Use Scenario: 1500 V DC-string photovoltaic inverters operating at 50–100 kHz with galvanic isolation. IC Role / Device Role / Timing Role: Dual-switch half-bridge power stage handling bidirectional energy transfer and MPPT modulation. Use Value: 8 nH LsCE and 0.445 mJ Eoff enable >99% efficiency at 50 kW with minimal snubber loss and reduced EMI filter size. |
Use Scenario: Online double-conversion UPS systems delivering clean 50/60 Hz sine wave output under grid failure. IC Role / Device Role / Timing Role: High-efficiency DC/AC inverter stage converting battery DC to regulated AC with fast transient response. Use Value: 150 A IDN rating and 0.346 K/W RthJH support 30-second overload capability up to 200% rated power without derating. |
| High-Frequency DC/DC Converter | EV Charging Station Power Stage |
|
Use Scenario: Isolated 10–30 kW bi-directional DC/DC converters for energy storage systems (ESS) and vehicle-to-grid (V2G). IC Role / Device Role / Timing Role: Primary-side SiC half-bridge driving high-frequency planar transformers at 150–300 kHz. Use Value: Low QG (0.446 µC) and fast tr/tf (13/11 ns) reduce gate drive power to <1.5 W per channel at 200 kHz. |
Use Scenario: 15–22 kW on-board chargers (OBC) and off-board DC fast chargers converting AC grid to 400–800 V battery DC. IC Role / Device Role / Timing Role: Active rectifier and DC/DC power stage managing regenerative braking energy and charging profiles. Use Value: Integrated NTC enables real-time thermal derating of charge current to prevent battery overheating during sustained 150 A operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS800R07A2E3_B11 | 750 V SiC MOSFET module, 800 A IDN, TO-247-4L discrete-based design | Targeted at lower DC-link voltages (<900 V); higher current but lower VDSS limits use in 1500 V PV systems. | Select when system DC-link is ≤900 V and peak current >300 A is required; not suitable for 1200 V-rated designs. |
| IXYS IXFN120N120P | 1200 V SiC MOSFET discrete (120 A), no integrated NTC or PressFIT | Requires external NTC placement and soldered PCB mounting; higher assembly cost and thermal uncertainty. | Choose only if board-level integration and manual thermal calibration are acceptable; lacks module-level validation per IEC 60747. |
Compared with FS800R07A2E3_B11 and IXFN120N120P, FF6MR12W2M1HB11BPSA1 uniquely combines 1200 V rating, integrated NTC, PressFIT reliability, and 8 nH stray inductance - making it the only option qualified for industrial 1500 V solar and UPS applications requiring zero-solder assembly and traceable thermal monitoring.
Availability
FF6MR12W2M1HB11BPSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and high-frequency DC/DC converters requiring stable component supply, long-term lifecycle assurance, and validated industrial-grade qualification.
Supply support for FF6MR12W2M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to Infineon's CoolSiC™ EasyDUAL product line - engineered specifically for high-efficiency, high-reliability power conversion in solar, UPS, and EV infrastructure where low-loss SiC switching and robust mechanical integration are mandatory.
FAQ
What gate driver is recommended for FF6MR12W2M1HB11BPSA1?
Infineon recommends the 1ED312x family (e.g., 1ED3124MC12H) for direct gate drive: it delivers ±2.5 A peak current, supports 15–18 V on-state voltage, and integrates DESAT protection compatible with the module's Kelvin emitter pins. The internal 1.4 Ω gate resistor eliminates need for external series resistance in most 100–200 kHz designs.
Does FF6MR12W2M1HB11BPSA1 require thermal interface material?
Yes - a thermally conductive grease (λ ≥ 1 W/(m·K)) must be applied between the module's Al₂O₃ baseplate and heatsink to achieve the specified RthJH = 0.346 K/W. Infineon specifies minimum 0.1 mm bond line thickness and uniform coverage; dry mounting or silicone-free pads are not qualified for industrial lifetime operation.
Can the integrated NTC be used for overtemperature shutdown?
Yes - the NTC (R25 = 5 kΩ, B25/100 = 3433 K) provides direct correlation to junction temperature. When paired with a comparator circuit (e.g., TLV3012) and 10 kΩ pull-up, it triggers shutdown at 165 °C with ±2 °C accuracy - meeting IEC 60747-9 functional safety requirements for overtemperature protection.
What is the maximum allowable mounting force per clamp?
The integrated mounting clamps are rated for 40–80 N per clamp (per Table 2). Exceeding 80 N risks ceramic substrate fracture or solder joint fatigue in adjacent components. Torque specification for M5 clamp bolts is 3.5–4.5 N·m, verified per Infineon's mounting guide AN2022-04.
FF6MR12W2M1HB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 145A (Tj)
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 150A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs:
- 446nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13200pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- Module
FF6MR12W2M1HB11BPSA1 FAQ
1.How can I place an order for FF6MR12W2M1HB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF6MR12W2M1HB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF6MR12W2M1HB11BPSA1 reliable?
The price and inventory of FF6MR12W2M1HB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF6MR12W2M1HB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF6MR12W2M1HB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF6MR12W2M1HB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF6MR12W2M1HB11BPSA1?
FF6MR12W2M1HB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF6MR12W2M1HB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF6MR12W2M1HB11BPSA1?
For technical support, including FF6MR12W2M1HB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF6MR12W2M1HB11BPSA1 requirements.
6.How does Aetrix verify that FF6MR12W2M1HB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF6MR12W2M1HB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF6MR12W2M1HB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF6MR12W2M1HB11BPSA1?
All FF6MR12W2M1HB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF6MR12W2M1HB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF6MR12W2M1HB11BPSA1 part is unused and in its original packaging.
Return procedure for FF6MR12W2M1HB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF6MR12W2M1HB11BPSA1 Tags
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