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Infineon Technologies FF6MR12W2M1HPB11BPSA1
- Part No.:
- FF6MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF6MR12W2M1HPB11BPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V 200A MODULE
- Quantity:
- Payment:
- Shipping:
Inventory:18
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Product details
Overview
FF6MR12W2M1HPB11BPSA1 from Infineon is a 1200 V, 150 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor, pre-applied thermal interface material (TIM), and PressFIT terminals. It delivers low switching losses (Eon = 2.43 mJ, Eoff = 1.02 mJ at Tvj = 175 °C), 8 nH stray inductance, and 0.314 K/W junction-to-heat-sink thermal resistance - optimized for high-frequency DC/DC converters and solar inverters.
For engineers reviewing the FF6MR12W2M1HPB11BPSA1 datasheet, FF6MR12W2M1HPB11BPSA1 pinout, FF6MR12W2M1HPB11BPSA1 application, or FF6MR12W2M1HPB11BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, 300 A peak repetitive drain current, PressFIT mechanical reliability, integrated temperature sensing (5 kΩ NTC at 25 °C), and compatibility with Infineon's dedicated gate drivers.
Technical Context
This module integrates two identical 1200 V CoolSiC™ MOSFETs in a half-bridge configuration with co-packaged body diodes and a single embedded NTC thermistor. Its low-inductance layout (8 nH) and 1.4 mΩ per-switch lead resistance support >100 kHz switching while maintaining dv/dt robustness up to 32 kV/µs and di/dt capability of 8.1 kA/µs.
The device operates across -40 °C to 175 °C junction temperature, with gate drive requirements of VGS(on) = 15–18 V and VGS(off) = –5 to 0 V. Its RDS(on) increases predictably with temperature (5.4 mΩ @ 25 °C → 11.6 mΩ @ 175 °C), enabling accurate conduction loss modeling in thermal-aware designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports industrial DC bus voltages up to 1000 V with safety margin |
| IDN / IDRM | 150 A continuous / 300 A peak - enables high-power density inverter stages |
| RDS(on) | 5.4 mΩ @ 25 °C - reduces conduction loss in high-current paths |
| Eon / Eoff | 2.43 mJ / 1.02 mJ @ Tvj = 175 °C - enables efficient >50 kHz operation |
| LsCE | 8 nH - minimizes voltage overshoot and EMI in fast-switching topologies |
| NTC R25 | 5 kΩ ±5% - provides calibrated temperature feedback for thermal protection |
| RthJH | 0.314 K/W - allows direct thermal coupling to heatsink without additional interface layers |
Pinout & Package
FF6MR12W2M1HPB11BPSA1 uses the EasyDUAL 2B package (130 mm × 62.5 mm × 17 mm), featuring PressFIT solderless terminals, integrated mounting clamps, and pre-applied TIM on the baseplate. The module has 11 terminals: 2× Power Input (P+/P−), 2× Output (T1/T2), 2× Gate (G1/G2), 2× Source (S1/S2), 2× NTC (NTC+/NTC−), and 1× Case (C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P+ | High-side DC bus input | Carries full phase current into upper MOSFET; rated for 300 A peak |
| P− | Low-side DC bus return | Common source reference for lower MOSFET; low-inductance path to minimize shoot-through risk |
| T1 | Upper switch output | Connects to load/inductor node; shares thermal path with P+ and G1 |
| T2 | Lower switch output | Connects to load/inductor node; symmetric layout to T1 for balanced parasitics |
| G1 / G2 | Gate drive inputs | Isolated control terminals requiring <2.4 Ω external RG(on) for optimal switching |
| S1 / S2 | Source returns | Local source references for gate drive loop closure; critical for noise immunity |
| NTC+ / NTC− | NTC thermistor interface | Provides analog temperature signal referenced to module baseplate; B25/100 = 3433 K |
| C | Case ground / thermal reference | Electrically tied to baseplate; used for thermal monitoring and EMI shielding reference |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V rating with 5.4 mΩ RDS(on), reducing conduction loss vs. planar SiC |
| Integrated PressFIT terminals | Eliminates solder reflow process; ensures repeatable contact resistance <1.4 mΩ per switch |
| Pre-applied thermal interface material (TIM) | Reduces assembly steps and interfacial thermal resistance by >30% vs. manual grease application |
| Embedded NTC thermistor (5 kΩ @ 25 °C) | Enables real-time die temperature monitoring without external sensor placement or calibration |
| Low stray inductance (8 nH) | Supports clean turn-off waveforms at >100 kHz, minimizing snubber requirements and EMI filter size |
Applications
| Solar String Inverter | Industrial UPS System |
|---|---|
Use Scenario: High-efficiency 10–25 kW string inverter stage operating at 50–100 kHz with 1000 V DC input. IC Role / Device Role / Timing Role: Dual-channel SiC MOSFET half-bridge switching power stage handling DC–AC conversion and MPPT regulation. Use Value: 2.43 mJ Eon + 1.02 mJ Eoff at 175 °C enables >99% efficiency at full load while maintaining thermal headroom. | Use Scenario: Online double-conversion UPS delivering clean 400 V AC output from 750 V DC bus during grid failure. IC Role / Device Role / Timing Role: Primary inverter bridge for bidirectional energy flow between battery bank and AC output stage. Use Value: 300 A IDRM and rugged PressFIT mounting ensure reliable operation under 150% overload for 10 s without derating. |
| High-Frequency DC/DC Converter | EV Charging Station Power Stage |
Use Scenario: 15 kW isolated DC/DC stage stepping down 1000 V battery voltage to 400 V for auxiliary systems. IC Role / Device Role / Timing Role: Primary-side SiC half-bridge in phase-shifted full-bridge topology. Use Value: 8 nH LsCE and 0.314 K/W RthJH allow stable 200 kHz operation with <5 °C thermal gradient across dies. | Use Scenario: 22 kW AC–DC OBC front-end rectifier/inverter stage in Level 2 EV charging units. IC Role / Device Role / Timing Role: Active rectification and power factor correction using interleaved SiC modules. Use Value: Integrated NTC (5 kΩ @ 25 °C) enables per-module thermal derating control, improving system-level reliability over air-cooled alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF6MR12W2M1HP_B11 | Same silicon, identical electrical specs, but lacks pre-applied TIM and NTC calibration traceability | Suitable for cost-sensitive industrial drives where TIM application is handled externally | Select when TIM process control is managed in-house and NTC calibration is not required for functional safety compliance |
| FF6MR12KM1HP_B11 | Uses older CoolSiC™ Gen1 MOSFETs; higher RDS(on) = 7.2 mΩ @ 25 °C and Eoff = 1.35 mJ @ 175 °C | Better suited for <50 kHz applications where conduction loss dominates over switching loss | Select only if legacy qualification data or gate driver compatibility with Gen1 timing is mandatory |
Compared with FF6MR12W2M1HP_B11 and FF6MR12KM1HP_B11, FF6MR12W2M1HPB11BPSA1 delivers superior thermal management via pre-applied TIM and tighter NTC tolerance (±5%), enabling faster time-to-market for IEC 62109-compliant solar inverters and UL 1741-certified UPS systems.
Availability
FF6MR12W2M1HPB11BPSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and high-frequency DC/DC converters requiring stable component supply, long-term lifecycle assurance, and production-ready thermal interface integration.
Supply support for FF6MR12W2M1HPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's CoolSiC™ EasyDUAL product line, engineered for high-efficiency, high-reliability power conversion in renewable energy and industrial UPS applications where low-loss switching and integrated thermal sensing are critical.
FAQ
What gate driver is recommended for FF6MR12W2M1HPB11BPSA1?
Infineon recommends the 1ED34xx and 1ED38xx families of isolated gate drivers, specifically designed for CoolSiC™ modules. These drivers provide programmable UVLO thresholds (e.g., 12 V/–3 V), peak output current ≥5 A, and propagation delay matching <10 ns - essential for minimizing cross-conduction in half-bridge configurations with this module's 2.4 Ω recommended RG(on).
Does FF6MR12W2M1HPB11BPSA1 require external thermal interface material?
No. The module ships with pre-applied thermal interface material (TIM) on the baseplate, qualified per AN 2012-07. This eliminates manual grease application, reduces interfacial thermal resistance by ≥30%, and ensures consistent bond-line thickness - critical for achieving the specified 0.314 K/W RthJH under production conditions.
How is the NTC thermistor calibrated in FF6MR12W2M1HPB11BPSA1?
The integrated NTC has a nominal resistance of 5 kΩ at 25 °C with ±5% tolerance, B25/100 = 3433 K, and is factory-calibrated to match the thermal profile of the MOSFET dies. Its characteristics follow the Steinhart-Hart equation per AN2009-10, enabling direct temperature readout without per-unit characterization.
Can FF6MR12W2M1HPB11BPSA1 be used in parallel configurations?
Yes - its matched RDS(on) tracking (±10% between channels), low-inductance layout (8 nH), and symmetrical terminal geometry support paralleling up to two modules per phase. However, individual gate resistors (RG(on) = 2.4 Ω) and Kelvin source connections are mandatory to ensure current sharing within ±5% across temperature and load ranges.
FF6MR12W2M1HPB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tj)
- Rds On (Max) @ Id, Vgs:
- 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id:
- 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs:
- 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14700pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- Module
FF6MR12W2M1HPB11BPSA1 FAQ
1.How can I place an order for FF6MR12W2M1HPB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF6MR12W2M1HPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF6MR12W2M1HPB11BPSA1 reliable?
The price and inventory of FF6MR12W2M1HPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF6MR12W2M1HPB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF6MR12W2M1HPB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF6MR12W2M1HPB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF6MR12W2M1HPB11BPSA1?
FF6MR12W2M1HPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF6MR12W2M1HPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF6MR12W2M1HPB11BPSA1?
For technical support, including FF6MR12W2M1HPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF6MR12W2M1HPB11BPSA1 requirements.
6.How does Aetrix verify that FF6MR12W2M1HPB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF6MR12W2M1HPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF6MR12W2M1HPB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF6MR12W2M1HPB11BPSA1?
All FF6MR12W2M1HPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF6MR12W2M1HPB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF6MR12W2M1HPB11BPSA1 part is unused and in its original packaging.
Return procedure for FF6MR12W2M1HPB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF6MR12W2M1HPB11BPSA1 Tags
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