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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GC041N65QF MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	3,000	RFQ	Datasheet	-	TO-247-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	70A (Tc)	10V	43mOhm @ 20A, 10V	5V @ 250µA	160 nC @ 10 V	±30V	7668 pF @ 400 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
GS65R030Q4A SiC MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
GS65R045Q4A SiC MOSFET N-CH 650V 51A TO-247 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
GS120R033Q4A SiC MOSFET N-CH 1200V 69A TO-24 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
GS120R040Q4 SiC MOSFET N-CH 1200V 50A TO-24 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-4L
G2K3N10G N100V, 2.5A,RD<220M@10V,VTH1V~2V Goford Semiconductor	1,126	RFQ	Datasheet	TrenchFET®	TO-243AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2.5A (Tc)	4.5V, 10V	220mOhm @ 2A, 10V	2V @ 250µA	13 nC @ 10 V	±20V	436 pF @ 50 V	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-89
G1003B N100V,RD(MAX)<170M@10V,RD(MAX)<1 Goford Semiconductor	934	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3A (Tc)	4.5V, 10V	130mOhm @ 1A, 10V	2.5V @ 250µA	30 nC @ 10 V	±20V	760 pF @ 50 V	-	3.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3L
G900P15T MOSFET P-CH 150V 60A TO-220 Goford Semiconductor	1,000	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	60A (Tc)	10V	80mOhm @ 5A, 10V	4V @ 250µA	-	±20V	-	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G2K2P10D3E MOSFET P-CH ESD 100V 10A DFN3*3- Goford Semiconductor	352	RFQ	Datasheet	TrenchFET®	8-PowerVDFN	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	10A (Tc)	4.5V, 10V	210mOhm @ -6A, -10V	2.5V @ 250µA	33 nC @ 10 V	±20V	1668 pF @ 50 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (3.15x3.05)
G400P06T P-60V,-32A,RD(MAX)<40M@-10V,VTH- Goford Semiconductor	64	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	32A (Tc)	10V	40mOhm @ 12A, 10V	3V @ 250µA	46 nC @ 10 V	±20V	2598 pF @ 30 V	-	110W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220

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