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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G58N06F N60V, 35A,RD<13M@10V,VTH1.0V~2.4 Goford Semiconductor	100	RFQ	Datasheet	TrenchFET®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	35A (Tc)	4.5V, 10V	13mOhm @ 30A, 10V	2.4V @ 250µA	75 nC @ 10 V	±20V	30006 pF @ 30 V	-	44W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
GT130N10F MOSFET N-CH 100V 45A TO-220F Goford Semiconductor	54	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	45A (Tc)	10V	12mOhm @ 20A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	1215 pF @ 50 V	-	41.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
GT180N12M MOSFET N-CH 120V 55A 96W TO-263 Goford Semiconductor	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120 V	55A (Tc)	10V	17mOhm @ 20A, 10V	3.7V @ 250µA	22 nC @ 10 V	±20V	1635 pF @ 60 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
G20P08K P-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Goford Semiconductor	59	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	80 V	20A (Tc)	4.5V, 10V	62mOhm @ 10A, 10V	2.5V @ 250µA	48 nC @ 10 V	±20V	3500 pF @ 30 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
630AT N200V,RD(MAX)<250M@10V,RD(MAX)<3 Goford Semiconductor	26	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	9A (Tc)	4.5V, 10V	250mOhm @ 1A, 10V	2.2V @ 250µA	11.8 nC @ 10 V	±20V	509 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT105N10M MOSFET N-CH 100V 60A 83W TO-263 Goford Semiconductor	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	60A (Tc)	10V	11mOhm @ 20A, 10V	3V @ 250µA	16 nC @ 10 V	±20V	1675 pF @ 50 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
18N20F N200V, 18A,RD<0.19@10V,VTH1.0V~3 Goford Semiconductor	75	RFQ	Datasheet	TrenchFET®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	190mOhm @ 9A, 10V	3V @ 250µA	18 nC @ 10 V	±20V	852 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
G18N20T MOSFET N-CH 200V 18A 110W 190M(M Goford Semiconductor	50	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	190mOhm @ 8A, 10V	4V @ 250µA	31 nC @ 5 V	±30V	1120 pF @ 100 V	-	110W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G048N04T MOSFET N-CH 40V 150A TO-220 Goford Semiconductor	47	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Tc)	10V	3.3Ohm @ 50A, 10V	2.5V @ 250µA	117 nC @ 10 V	±20V	6561 pF @ 20 V	-	130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G075N06M MOSFET N-CH 60V 110A 160W TO-263 Goford Semiconductor	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Tc)	10V	7mOhm @ 20A, 10V	3V @ 250µA	90 nC @ 10 V	±20V	6443 pF @ 30 V	-	160W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263

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