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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GT038P06M MOSFET P-CH 60V 200A 350W TO-26 Goford Semiconductor	95	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	200A (Tc)	4.5V, 10V	4.5mOhm @ 50A, 10V	2.5V @ 250µA	386 nC @ 10 V	±20V	11988 pF @ 30 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT035N10M N100V, 190A,RD<3.5M@10V,VTH2V~4V Goford Semiconductor	90	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	190A (Tc)	10V	3.5mOhm @ 20A, 10V	4V @ 250µA	68 nC @ 10 V	±20V	6188 pF @ 50 V	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT035N10Q MOSFET N-CH 100V 190A TO-247 Goford Semiconductor	51	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	190A (Tc)	10V	3.5mOhm @ 30A, 10V	4V @ 250µA	68 nC @ 10 V	±20V	6516 pF @ 50 V	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
GC120N65QF MOSFET N-CH 650V 30A TO-247 Goford Semiconductor	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	120mOhm @ 38A, 10V	5V @ 250µA	68 nC @ 10 V	±30V	3100 pF @ 275 V	-	96.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
GC080N65QF MOSFET N-CH 650V 50A TO-247 Goford Semiconductor	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	50A (Tc)	10V	80mOhm @ 16A, 10V	5V @ 250µA	100 nC @ 10 V	±30V	4900 pF @ 380 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
GC030N65QF MOSFET N-CH 650V 80A TO-247 Goford Semiconductor	30	RFQ	Datasheet	-	-	Tube	Active	-	MOSFET (Metal Oxide)	-	80A (Tc)	10V	30mOhm @ 20A, 10V	5V @ 250µA	240 nC @ 10 V	±30V	9500 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-247-3
G75P04T MOSFET P-CH 40V 70A TO-220 Goford Semiconductor	1,000	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	70A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	2.5V @ 250µA	-	±20V	-	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G08N02L N20V, 8A, RD<12.3M@4.5V,VTH0.5V~ Goford Semiconductor	8,946	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3		Active	N-Channel	MOSFET (Metal Oxide)	20 V	8A (Tc)	2.5V, 4.5V	12.3mOhm @ 12A, 4.5V	900mV @ 250µA	22 nC @ 10 V	±12V	929 pF @ 10 V	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G06N02H N20V, 6A, RD<14.3M@4.5V,VTH0.5V~ Goford Semiconductor	2,096	RFQ	Datasheet	-	TO-261-4, TO-261AA		Active	N-Channel	MOSFET (Metal Oxide)	20 V	6A (Tc)	2.5V, 4.5V	14.3mOhm @ 3A, 4.5V	900mV @ 250µA	12.5 nC @ 10 V	±12V	1140 pF @ 10 V	-	1.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
G08N03D2 N30V,8A,RD<20M@10V,VTH1.0V~2.0V, Goford Semiconductor	8,365	RFQ	Datasheet	-	6-WDFN Exposed Pad		Active	N-Channel	MOSFET (Metal Oxide)	30 V	8A (Tc)	4.5V, 10V	20mOhm @ 4A, 10V	2V @ 250µA	15 nC @ 10 V	±20V	681 pF @ 15 V	-	17W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-DFN (2x2)

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