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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G75P04KI P-40V,-70A,RD(MAX)<6.5M@-10V,VTH Goford Semiconductor	3,017	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63		Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6586 pF @ 20 V	-	130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
GT080N10KI N100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor	8,490	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63		Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	65A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	2.5V @ 250µA	35 nC @ 10 V	±20V	2394 pF @ 50 V	-	79W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G75P04TI P-40V,-70A,RD(MAX)<7M@-10V,VTH-1 Goford Semiconductor	2,177	RFQ	Datasheet	-	TO-220-3		Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6407 pF @ 20 V	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT009N04D5 N40V,100A,RD<1.3M@10V,VTH1.0V~2. Goford Semiconductor	6,998	RFQ	Datasheet	-	8-PowerTDFN		Active	N-Channel	MOSFET (Metal Oxide)	45 V	100A (Tc)	4.5V, 10V	1.3mOhm @ 20A, 10V	2.5V @ 250µA	86 nC @ 10 V	±20V	6864 pF @ 20 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G75P04FI P-40V,-60A,RD(MAX)<7M@-10V,VTH-1 Goford Semiconductor	5,418	RFQ	Datasheet	TrenchFET®	TO-220-3 Full Pack		Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	7mOhm @ 10A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6275 pF @ 20 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
GT080N10TI N100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor	9,621	RFQ	Datasheet	-	TO-220-3		Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	65A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	2.5V @ 250µA	35 nC @ 10 V	±20V	2328 pF @ 50 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G18P03D3 P30V,RD(MAX)<10M@-10V,RD(MAX)<15 Goford Semiconductor	5,075	RFQ	Datasheet	TrenchFET®	8-PowerVDFN		Active	P-Channel	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	10mOhm @ 10A, 10V	2.5V @ 250µA	45 nC @ 10 V	±20V	3074 pF @ 15 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (3.15x3.05)
GT040N04TI N40V, 110A,RD<4M@10V,VTH1.0V~2.5 Goford Semiconductor	14	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	110A (Tc)	4.5V, 10V	4mOhm @ 10A, 10V	2.5V @ 250µA	50 nC @ 10 V	±20V	2303 pF @ 20 V	-	160W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT040N04T MOSFET N-CH 40V 120A 96W 4M(MAX) Goford Semiconductor	5,167	RFQ	-	SGT	-		Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	10V, 4.5V	4mOhm @ 30A, 10V	2.3V @ 250µA	38 nC @ 10 V	20V	2794 pF @ 20 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
G6N90F MOSFET N-CH 900V 6A 69W 3(MAX) T Goford Semiconductor	7,125	RFQ	-	Trench	-		Active	N-Channel	MOSFET (Metal Oxide)	900 V	6A (Tc)	10V	3Ohm @ 3A, 10V	5V @ 250µA	25 nC @ 10 V	20V	1060 pF @ 450 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-

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