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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GT013N04TI MOSFET N-CH 40V 220A TO-220 Goford Semiconductor	50	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	220A (Tc)	10V	2.5mOhm @ 30A, 10V	5V @ 250µA	50 nC @ 10 V	±20V	3986 pF @ 20 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G75P04F MOSFET P-CH 40V 54A TO-220F Goford Semiconductor	100	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	P-Channel	MOSFET (Metal Oxide)	40 V	54A (Tc)	4.5V, 10V	7mOhm @ 10A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6768 pF @ 20 V	-	35.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
G2K6P25T MOSFET P-CH 250V 28A 300W TO-220 Goford Semiconductor	38	RFQ	Datasheet	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	250 V	28A (Tc)	10V	260mOhm @ 10A, 10V	4V @ 250µA	77 nC @ 10 V	±20V	2984 pF @ 125 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT048N10T MOSFET N-CH 100V 110A 150W 4.8M Goford Semiconductor	49	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	110A (Tc)	4.5V, 10V	4.8mOhm @ 20A, 10V	2.5V @ 250µA	49 nC @ 10 V	±20V	3220 pF @ 50 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT035N06T N-CH, 60V,170A, RD(MAX)<3.5M@10V Goford Semiconductor	96	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	3.5mOhm @ 20A, 10V	2.5V @ 250µA	70 nC @ 10 V	±20V	5064 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G18N50T MOSFET N-CH 500V 18A TO-220 Goford Semiconductor	50	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	18A (Tc)	10V	350mOhm @ 9A, 10V	5V @ 250µA	50 nC @ 10 V	±30V	3000 pF @ 250 V	-	189.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G040P04T MOSFET P-CH 40V 222A TO-220 Goford Semiconductor	98	RFQ	Datasheet	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	40 V	222A (Tc)	4.5V, 10V	3.7mOhm @ 20A, 10V	2.5V @ 250µA	206 nC @ 10 V	±20V	15087 pF @ 20 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G030N06T MOSFET N-CH 60V 223A TO-220 Goford Semiconductor	100	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	223A (Tc)	4.5V, 10V	2.7mOhm @ 30A, 10V	2.5V @ 250µA	101 nC @ 10 V	±20V	11999 pF @ 30 V	-	240W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT042P06T MOSFET, P-CH,-60V,-160A,RD(MAX)< Goford Semiconductor	53	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	160A (Tc)	4.5V, 10V	4.5mOhm @ 15A, 10V	2.5V @ 250µA	305 nC @ 10 V	±20V	9151 pF @ 30 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT040N10T MOSFET N-CH 100V 140A 200W 4.5M Goford Semiconductor	46	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	4.5V, 10V	4.5mOhm @ 40A, 10V	2.5V @ 250µA	100 nC @ 10 V	±20V	5920 pF @ 50 V	-	200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220

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