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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FF07075E-3A SICFET N-CH 750V 34A TO-247-3L fastSiC	300	RFQ	-	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	34A (Tc)	18V	95mOhm @ 10A, 18V	2.5V @ 20mA	70 nC @ 15 V	+18V, -8V	1564 pF @ 500 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-3L
AC3M0021120K SIC MOSFET N-CH 1200V 102A TO247 APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	102A (Tc)	15V	28.8mOhm @ 50A, 15V	3.6V @ 17.7mA	-	+19V, -8V	-	-	469W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0021120D SIC MOSFET N-CH 1200V 117A TO247 APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	82A	15V	28.8mOhm @ 50A, 15V	3.6V @ 17.7mA	-	+19V, -8V	-	-	469W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
FF12080J-7A SICFET N-CH 1200V 31A TO-263-7L fastSiC	300	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V	112mOhm @ 8A, 18V	2.5V @ 20mA	73 nC @ 15 V	18V	1548 pF @ 800 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7L
NC1M120C75GTNG SiC MOSFET N 1200V 75mohm 47A 3 NovuSem	2,400	RFQ	Datasheet	NC1M	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	47A (Tc)	20V	75mOhm @ 20A, 20V	2.8V @ 5mA	-	+20V, -5V	1450 pF @ 1000 V	-	288W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3L
FCH76N60NF POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	4,950	RFQ	Datasheet	SupreMOS™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	72.8A (Tc)	10V	38mOhm @ 38A, 10V	5V @ 250µA	300 nC @ 10 V	±30V	11045 pF @ 100 V	-	543W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
FF12080QA SICFET N-CH 1200V 29A TO-247-4L fastSiC	300	RFQ	-	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	29A (Tc)	18V	112mOhm @ 8A, 18V	2.5V @ 20mA	73 nC @ 15 V	+18V, -8V	1548 pF @ 800 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF12080E-3A SICFET N-CH 1200V 29A TO-247-3L fastSiC	300	RFQ	-	Falcon	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	29A (Tc)	18V	112mOhm @ 8A, 18V	2.5V @ 20mA	73 nC @ 15 V	+18V, -8V	1548 pF @ 800 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-3L
GS65R030Q4A SiC MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
GS65R045Q4A SiC MOSFET N-CH 650V 51A TO-247 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
MT9M131C12STC-MI-DR CMOS IMAGE SENSOR SYSTEM-ON-CHIP onsemi	3,040	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AC3M0015065K SIC MOSFET N-CH 650V 122A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	122A (Tc)	15V	21mOhm @ 55.8A, 15V	3.6V @ 15.5mA	-	+19V, -8V	-	-	416W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0015065D SIC MOSFET N-CH 650V 122A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	122A (Tc)	15V	21mOhm @ 55.8A, 15V	3.6V @ 15.5mA	-	+19V, -8V	-	-	416W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
GS120R033Q4A SiC MOSFET N-CH 1200V 69A TO-24 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4L
GS120R040Q4 SiC MOSFET N-CH 1200V 50A TO-24 Goford Semiconductor	5,000	RFQ	Datasheet	TrenchFET®	TO-247-4	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-4L
FF06030Q SICFET N-CH 650V 65A TO-247-4L fastSiC	300	RFQ	-	Falcon	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	65A (Tc)	18V	45mOhm @ 30A, 18V	2.2V @ 40mA	125 nC @ 15 V	+18V, -8V	3015 pF @ 400 V	-	202W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TO-247-4L
FF06030J-7A SICFET N-CH 650V 74A TO-263-7L fastSiC	300	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	74A (Tc)	18V	45mOhm @ 30A, 18V	2.5V @ 40mA	125 nC @ 15 V	18V	3015 pF @ 400 V	-	268W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7L
FF06030FA SICFET N-CH 650V 74A TOLL fastSiC	300	RFQ	Datasheet	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	74A (Tc)	18V	45mOhm @ 30A, 18V	2.5V @ 40mA	125 nC @ 15 V	18V	3015 pF @ 400 V	-	268W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
FF06030J-7 SICFET N-CH 650V 62A TO-263-7L fastSiC	300	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	62A (Tc)	15V, 18V	45mOhm @ 30A, 18V	2.5V @ 40mA (Typ)	125 nC @ 400 V	+18V, -8V	3015 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7L
FF07035FA SICFET N-CH 750V 61A TOLL fastSiC	300	RFQ	-	Falcon	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	61A (Tc)	18V	48mOhm @ 22A, 18V	2.5V @ 40mA	112 nC @ 15 V	+18V, -8V	2818 pF @ 500 V	-	267W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	TOLL

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