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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
RQA0002DNSTB-E RQA0002DNS - N CHANNEL MOSFET Renesas	9,270	RFQ	-	-	3-DFN Exposed Pad	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	16 V	3.8A (Ta)	-	-	750mV @ 1mA	-	±5V	102 pF @ 0 V	-	15W (Tc)	150°C	-	-	Surface Mount	2-HWSON (5x4)
GPI65008DF68 GaNFET N-CH 650V 8A DFN6x8 GaNPower	990	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	8A	6V	-	1.7V @ 3.5mA	2.1 nC @ 6 V	+7.5V, -12V	63 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
2SK3357-A 2SK3357 - N-CHANNEL POWER MOSFET Renesas	294	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Ta)	4V, 10V	5.8mOhm @ 38A, 10V	2.5V @ 1mA	170 nC @ 10 V	±20V	9800 pF @ 10 V	-	3W (Ta), 150W (Tc)	150°C	-	-	Through Hole	TO-3P (MP-88)
AC3M0120065K SIC MOSFET N-CH 650V 23A TO247-4 APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	23A	15V	157mOhm @ 6.76A, 15V	3.6V @ 1.86mA	-	+19V, -8V	-	-	98W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0075120K SIC MOSFET N-CH 1200V 33A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	33A	15V	90mOhm @ 20A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	136W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC2M0080120D SIC MOSFET N-CH 1200V 37A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A	20V	98mOhm @ 20A, 20V	4V @ 5mA	-	+25V, -10V	-	-	129W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0120065D SIC MOSFET N-CH 650V 23A TO247-3 APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	23A	15V	157mOhm @ 6.76A, 15V	3.6V @ 1.86mA	-	+19V, -8V	-	-	98W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0120090D SIC MOSFET N-CH 900V 24A TO247-3 APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	24A	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	-	+19V, -8V	-	-	97W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0075120D SIC MOSFET N-CH 1200V 33A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	33A	15V	90mOhm @ 20A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	136W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
NTMFS5C404NT1G-01 NTMFS5C404NT1G-01 Flip Electronics	47,870	RFQ	-	*	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDBL0150N60 FDBL0150N60 - N-CHANNEL POWERTRE Fairchild Semiconductor	2,380	RFQ	Datasheet	PowerTrench®	8-PowerSFN	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	240A (Tc)	10V	1.5mOhm @ 80A, 10V	4V @ 250µA	169 nC @ 10 V	±20V	10300 pF @ 30 V	-	357W (Tj)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-HPSOF
NVMFS5C404NAFT1G-01 N-Channel 40 V 53A (Ta), 378A (T Flip Electronics	1,500	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFP4110 MOSFET N-CH 100V 120A TO247AC International Rectifier	14,894	RFQ	Datasheet	HEXFET®	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	9620 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
AUIRF7799L2TR MOSFET N-CH 250V 375A DIRECTFT International Rectifier	5,733	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric L8	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	250 V	375A (Tc)	10V	38mOhm @ 21A, 10V	5V @ 250µA	165 nC @ 10 V	±30V	6714 pF @ 25 V	-	4.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric L8
FQA44N30 POWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor	410	RFQ	Datasheet	QFET®	TO-3P-3, SC-65-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	300 V	43.5A (Tc)	10V	69mOhm @ 21.75A, 10V	5V @ 250µA	150 nC @ 10 V	±30V	5600 pF @ 25 V	-	310W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PN
FDP039N08B-F102 MOSFET N-CH 80V 120A TO220-3 Fairchild Semiconductor	399	RFQ	Datasheet	PowerTrench®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	3.9mOhm @ 100A, 10V	4.5V @ 250µA	133 nC @ 10 V	±20V	9450 pF @ 40 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
IRL60SL216 IRL60SL216 - 12V-300V N-CHANNEL International Rectifier	800	RFQ	Datasheet	HEXFET®, StrongIRFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	4.5V, 10V	1.95mOhm @ 100A, 10V	2.4V @ 250µA	255 nC @ 4.5 V	±20V	15330 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262-3
FCA22N60N POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	391	RFQ	Datasheet	SupreMOS™	TO-3P-3, SC-65-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	165mOhm @ 11A, 10V	4V @ 250µA	45 nC @ 10 V	±30V	1950 pF @ 100 V	-	205W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PN
RJK6013DPP-E0#T2 RJK6013DPP-E0#T2 - SILICON N CHA Renesas	1,877	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Ta)	10V	700mOhm @ 5.5A, 10V	4.5V @ 1mA	37.5 nC @ 10 V	±30V	1450 pF @ 25 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220FP
NP88N075EUE-E2-AY NP88N075EUE - POWER MOSFETS FOR Renesas	1,600	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	88A (Tc)	10V	8.5mOhm @ 44A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	12300 pF @ 25 V	-	1.8W (Ta), 288W (Tc)	175°C	-	-	Surface Mount	TO-263-3

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