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Renesas RJK6013DPP-E0#T2
- Part No.:
- RJK6013DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
RJK6013DPP-E0#T2.pdf
- Description:
- RJK6013DPP-E0#T2 - SILICON N CHA
- Quantity:
- Payment:
- Shipping:
Inventory:1,877
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Product details
Overview
RJK6013DPP-E0#T2 from Renesas Electronics is a 600 V, 10 A N-channel power MOSFET in TO-220FPA package, optimized for high-speed switching in offline AC-DC converters and motor control inverters. It delivers RDS(on) = 0.77 Ω (typ.) at VGS = 10 V, td(off) = 80 ns, and Qg = 30 nC - enabling efficient hard-switching operation up to 100 kHz in industrial SMPS designs.
For engineers reviewing the RJK6013DPP-E0#T2 datasheet, RJK6013DPP-E0#T2 pinout, RJK6013DPP-E0#T2 application, or RJK6013DPP-E0#T2 equivalent, key selection criteria include its 600 V VDSS, 10 A continuous drain rating, 4.17 °C/W channel-to-case thermal impedance, and integrated body diode with trr = 350 ns for snubberless flyback and PFC stage use.
Technical Context
This MOSFET employs a planar silicon process with optimized gate oxide and cell pitch to achieve low RDS(on) while maintaining robust avalanche capability (EAR = 0.49 mJ). Its gate threshold voltage VGS(off) ranges from 3.0 V to 4.5 V, ensuring stable turn-on under 10 V gate drive common in isolated flyback controllers.
The device features low Crss (13 pF) and Ciss (1100 pF), supporting fast switching with minimal Miller-induced shoot-through risk. Its TO-220FPA package provides insulated mounting via plastic body, enabling direct heatsink attachment without isolation washers in compact industrial power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports universal-input (85–265 VAC) offline SMPS without derating |
| ID (continuous) | 10 A at Tc = 25 °C - enables 150–200 W output in single-switch forward or LLC resonant topologies |
| RDS(on) | 0.77 Ω typ. @ ID = 5 A, VGS = 10 V - reduces conduction loss to ≤0.77 W at 1 A RMS drain current |
| td(off) + tf | 97 ns total - allows clean 100 kHz switching with <1% dead-time overhead in half-bridge configurations |
| Qg | 30 nC - compatible with standard 1-A peak gate drivers (e.g., IR2110, UCC27531) without external buffering |
| trr | 350 ns - limits reverse recovery loss in discontinuous conduction mode (DCM) PFC stages |
| θch-c | 4.17 °C/W - permits 30 W channel dissipation with ≤125 °C case temperature using standard 25 mm² copper pad |
Pinout & Package
Package: TO-220FPA (RENESAS code PRSS0003AP-A), insulated plastic body with metal tab for heatsink mounting; mass = 1.65 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; input capacitance Ciss = 1100 pF requires ≥1 A peak driver for <50 ns rise time |
| 2 (Drain) | High-side power terminal | Connected to primary-side DC bus (e.g., 400 V PFC output); rated for 600 V blocking and 20 A pulsed current |
| 3 (Source) | Reference node / return path | Serves as local ground reference for gate driver; carries full load current and must be routed with low-inductance layout |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with high VDSS | 0.77 Ω @ 600 V enables higher efficiency than 650 V Si MOSFETs with >1 Ω RDS(on) in same package |
| Fast switching with low Qgd/Qgs | Qgd = 14.5 nC, Qgs = 6.5 nC - ratio of 2.22 suppresses Miller plateau duration and improves EMI margin |
| Robust body diode | VDF = 0.88 V typ. @ IF = 10 A, trr = 350 ns - supports synchronous rectification emulation in quasi-resonant flyback |
| Avalanche-rated operation | EAR = 0.49 mJ @ Tch ≤ 150 °C - withstands inductive turn-off transients in relay drivers and solenoid controls |
| Standard quality grade | Qualified for industrial applications including UPS, motor drives, and LED drivers per Renesas reliability standards |
Applications
| AC-DC Power Supply | Brushless DC Motor Drive |
|---|---|
|
Use Scenario: Primary-side switch in 150 W universal-input flyback converter with QR control. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus and delivering regulated 12 V/12.5 A output. Use Value: Low RDS(on) and fast tf reduce conduction and switching losses, achieving >88% efficiency at full load. |
Use Scenario: Upper-leg switch in 3-phase inverter driving 200 W BLDC fan with trapezoidal commutation. IC Role / Device Role / Timing Role: High-side switching element operating at 20 kHz PWM with 10 A peak phase current. Use Value: 600 V rating accommodates back-EMF spikes up to 450 V; td(on) = 30 ns ensures precise timing alignment across phases. |
| Industrial Lighting Ballast | Uninterruptible Power Supply (UPS) |
|
Use Scenario: Half-bridge switch in 100 W electronic ballast for T5 fluorescent lamps. IC Role / Device Role / Timing Role: Resonant-mode power switch controlling lamp ignition and regulation via variable-frequency control. Use Value: Low Crss minimizes capacitive coupling during dead-time, preventing shoot-through in high-dV/dt resonant circuits. |
Use Scenario: Inverter-stage switch in line-interactive UPS delivering 500 VA output with battery backup. IC Role / Device Role / Timing Role: Bidirectional power switch managing AC-to-DC and DC-to-AC conversion paths. Use Value: Avalanche energy rating (0.49 mJ) absorbs inductive kickback during transfer switching, enhancing system reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK60ZFP | RDS(on) = 0.75 Ω (typ.), but td(off) = 120 ns and Qg = 42 nC - higher switching loss at >60 kHz | Requires larger gate driver and heatsink in high-frequency PFC designs | Preferable only when lower RDS(on) dominates over switching speed requirements |
| IXTH10N60L2 | Lower Qg = 22 nC and faster tf = 12 ns, but RDS(on) = 0.95 Ω (typ.) - higher conduction loss above 5 A | Better suited for high-frequency, low-duty-cycle applications like Class-D audio amplifiers | Select when switching frequency exceeds 200 kHz and average current remains below 4 A |
Compared with STP10NK60ZFP and IXTH10N60L2, the RJK6013DPP-E0#T2 offers balanced trade-off between conduction loss (0.77 Ω) and switching performance (97 ns off-time), making it optimal for 100–150 kHz industrial SMPS where both efficiency and thermal management are critical.
Availability
RJK6013DPP-E0#T2 is available at Aetrix Electronics and suitable for AC-DC power supplies, brushless DC motor drives, and industrial lighting ballasts requiring stable component supply and long-term production continuity.
Supply support for RJK6013DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The RJK6013DPP-E0#T2 belongs to Renesas' standard-grade power MOSFET product line, engineered for cost-sensitive yet reliable high-voltage switching in industrial power conversion systems.
FAQ
What is the maximum continuous drain current rating for RJK6013DPP-E0#T2?
The RJK6013DPP-E0#T2 has a continuous drain current rating of 10 A at case temperature Tc = 25 °C. This rating decreases with rising case temperature due to thermal derating; at Tc = 100 °C, the usable ID drops to approximately 5.5 A based on its 4.17 °C/W thermal impedance and 30 W channel dissipation limit. The RJK6013DPP-E0#T2 must be mounted on an adequately sized heatsink to sustain full-load operation.
Does RJK6013DPP-E0#T2 have an integrated body diode, and what are its key parameters?
Yes, the RJK6013DPP-E0#T2 includes an integrated body-drain diode with forward voltage VDF = 0.88 V (typ.) at IF = 10 A and reverse recovery time trr = 350 ns under specified test conditions (diF/dt = 100 A/μs). This diode supports freewheeling in inductive loads and enables quasi-resonant operation in flyback converters. The RJK6013DPP-E0#T2's diode characteristics are fully characterized in its official datasheet and do not require external anti-parallel diodes in most standard topologies.
What gate drive voltage is required to fully enhance RJK6013DPP-E0#T2?
The RJK6013DPP-E0#T2 achieves its specified RDS(on) of 0.77 Ω (typ.) with a gate-to-source voltage of 10 V. Its gate threshold voltage VGS(off) ranges from 3.0 V to 4.5 V, meaning reliable turn-on occurs above ~4.5 V. For robust noise immunity and minimal on-resistance variation, a 10–12 V gate drive is recommended. Driving the RJK6013DPP-E0#T2 with only 5 V may result in incomplete enhancement and excessive conduction loss.
Is RJK6013DPP-E0#T2 suitable for avalanche operation, and what is its rated avalanche energy?
Yes, the RJK6013DPP-E0#T2 is rated for repetitive avalanche operation with single-pulse avalanche energy EAR = 0.49 mJ at Tch ≤ 150 °C. This rating applies under controlled test conditions (Tch = 25 °C, IAP = 3 A) and supports safe operation during inductive turn-off transients in relay drivers or motor phase switches. The RJK6013DPP-E0#T2's avalanche capability is validated per JEDEC standards and documented in its absolute maximum ratings table.
What is the package type and insulation rating of RJK6013DPP-E0#T2?
The RJK6013DPP-E0#T2 uses the TO-220FPA package (RENESAS code PRSS0003AP-A), which features a fully insulated plastic body and metal tab for direct heatsink mounting. Unlike standard TO-220, TO-220FPA provides electrical isolation between the drain-connected tab and mounting surface, eliminating the need for insulating pads or washers. The RJK6013DPP-E0#T2's package is RoHS-compliant and rated for storage temperatures from −55 °C to +150 °C.
RJK6013DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 700mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 37.5 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
RJK6013DPP-E0#T2 FAQ
1.How can I place an order for RJK6013DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK6013DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK6013DPP-E0#T2 reliable?
The price and inventory of RJK6013DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK6013DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK6013DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK6013DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK6013DPP-E0#T2?
RJK6013DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK6013DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK6013DPP-E0#T2?
For technical support, including RJK6013DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK6013DPP-E0#T2 requirements.
6.How does Aetrix verify that RJK6013DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK6013DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK6013DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK6013DPP-E0#T2?
All RJK6013DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK6013DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK6013DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJK6013DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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