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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AC2M1000170D SIC MOSFET N-CH 1700V 6A TO247-3 APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	6A	20V	1.4Ohm @ 2A, 20V	4V @ 0.5mA	-	+25V, -10V	-	-	69W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
NP82N10PUF-E1-AY NP82N10PUF-E1-AY - MOS FIELD EFF Renesas	6,400	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	82A (Tc)	5.8V, 10V	15mOhm @ 41A, 10V	3.3V @ 250µA	96 nC @ 10 V	±20V	4350 pF @ 25 V	-	1.8W (Ta), 150W (Tc)	175°C	-	-	Surface Mount	TO-263-3
MFT10N168AT263 MOSFET 100V 168A 188W N-CHANNEL Meritek	3,200	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	168A (Ta)	-	-	-	88 nC @ 50 V	-	3230 pF @ 50 V	-	-	-	-	-	-	-
FF06320A SICFET N-CH 650V 8.8A TO-252 fastSiC	300	RFQ	Datasheet	Falcon	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	8.6A (Tc)	18V	320mOhm @ 2A, 18V	1.6V @ 4mA	14.5 nC @ 15 V	18V	317.5 pF @ 400 V	-	41W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252
FL06320A SICFET N-CH 650V 8.8A TO-252 fastSiC	300	RFQ	Datasheet	Lightning	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	8.8A (Tc)	15V	320mOhm @ 2A, 15V	1.5V @ 4mA	14.5 nC @ 12 V	15V	344 pF @ 400 V	-	41W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252
HUFA75645S3S MOSFET N-CH 100V 75A D2PAK Fairchild Semiconductor	1,228	RFQ	Datasheet	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	14mOhm @ 75A, 10V	4V @ 250µA	238 nC @ 20 V	±20V	3790 pF @ 25 V	-	310W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
FQA9N90-F109 POWER FIELD-EFFECT TRANSISTOR, 8 Fairchild Semiconductor	398	RFQ	Datasheet	QFET®	TO-3P-3, SC-65-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	900 V	8.6A (Tc)	10V	1.3Ohm @ 4.3A, 10V	5V @ 250µA	72 nC @ 10 V	±30V	2700 pF @ 25 V	-	240W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PN
SPA21N50C3XKSA1 HIGH POWER_LEGACY Infineon Technologies	1,520	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	560 V	21A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	95 nC @ 10 V	±20V	2400 pF @ 25 V	-	34.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31
AUIRFP1405 AUIRFP1405 - 55V-60V N-CHANNEL A Infineon Technologies	800	RFQ	Datasheet	HEXFET®	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	95A (Tc)	10V	5.3mOhm @ 95A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	5600 pF @ 25 V	-	310W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
FCP13N60N POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	2,341	RFQ	Datasheet	SupreMOS™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	258mOhm @ 6.5A, 10V	4V @ 250µA	39.5 nC @ 10 V	±30V	1765 pF @ 100 V	-	116W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
2SK3435-AZ 2SK3435-AZ - SWITCHING N-CHANNEL Renesas	1,213	RFQ	Datasheet	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	10V	14mOhm @ 40A, 10V	2.5V @ 1mA	60 nC @ 10 V	±20V	3200 pF @ 10 V	-	1.5W (Ta), 84W (Tc)	150°C	-	-	Through Hole	TO-220AB
NTMFS4C805NT1G TRENCH 6 30V NCH onsemi	6,000	RFQ	-	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	11.9A (Ta)	4.5V, 10V	2.8mOhm @ 30A, 10V	2.2V @ 250µA	30 nC @ 10 V	±20V	1972 pF @ 15 V	-	770mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)
AM90N04-02B MOSFET N-CH 40V 120A TO-263 Analog Power Inc.	1,000	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS86152 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	479	RFQ	Datasheet	PowerTrench®	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Ta), 45A (Tc)	6V, 10V	6mOhm @ 14A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	3370 pF @ 50 V	-	2.7W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)
IPT60R102G7E8236XTMA1 HIGH POWER_NEW Infineon Technologies	6,778	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP88N04NUG-S18-AY NP88N04NUG-S18-AY - MOS FIELD EF Renesas	1,450	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	88A (Tc)	10V	3.4mOhm @ 44A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	15000 pF @ 25 V	-	1.8W (Ta), 200W (Tc)	175°C	-	-	Through Hole	TO-262
AC3M0280090D SIC MOSFET N-CH 900V 11A TO247-3 APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	11A	15V	360mOhm @ 7.5A, 15V	3.5V @ 1.2mA	-	+19V, -8V	-	-	45W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0120100K SIC MOSFET N-CH 1000V 24A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1000 V	24A	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	-	+19V, -8V	-	-	83W	-55°C ~ 150°C	-	-	Through Hole	TO-247-4
AC2M0160120D SIC MOSFET N-CH 1200V 18A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	18A	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	-	+25V, -10V	-	-	125W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC2M0280120D SIC MOSFET N-CH 1200V 11A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A	20V	370mOhm @ 6A, 20V	4V @ 1.25mA	-	+25V, -10V	-	-	69.4W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3

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