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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FCP104N60 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	129	RFQ	Datasheet	SuperFET® II	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	104mOhm @ 18.5A, 10V	3.5V @ 250µA	82 nC @ 10 V	±20V	4165 pF @ 380 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
2SK1449 2SK1449 - N-CHANNEL SILICON MOSF onsemi	775	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FL06320G SICFET N-CH 650V 8.8A PDFN8x8 fastSiC	300	RFQ	Datasheet	Lightning	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	8.8A (Tc)	15V	320mOhm @ 2A, 15V	1.5V @ 4mA	14.5 nC @ 12 V	15V	344 pF @ 400 V	-	41W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	4-PDFN (8x8)
AUIRFP4004 MOSFET N-CH 40V 195A TO247AC International Rectifier	152	RFQ	Datasheet	HEXFET®	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	10V	1.7mOhm @ 195A, 10V	4V @ 250µA	330 nC @ 10 V	±20V	8920 pF @ 25 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
FCPF290N80 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	7,634	RFQ	Datasheet	PowerTrench®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	290mOhm @ 8.5A, 10V	4.5V @ 1.7mA	75 nC @ 10 V	±20V	3205 pF @ 100 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
AUIRLS3034-7TRL MOSFET N-CH 40V 240A D2PAK International Rectifier	2,280	RFQ	Datasheet	HEXFET®	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	240A (Tc)	4.5V, 10V	1.4mOhm @ 200A, 10V	2.5V @ 250µA	180 nC @ 4.5 V	±20V	10990 pF @ 40 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK (7-Lead)
AUIRF1404S MOSFET N-CH 40V 75A D2PAK International Rectifier	22,531	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	4mOhm @ 95A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	7360 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
2SK3455B-S17-AY 2SK3455B - SWITCHING N-CHANNEL P Renesas	1,000	RFQ	-	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	12A (Tc)	10V	600mOhm @ 6A, 10V	3.5V @ 1mA	30 nC @ 10 V	±30V	1800 pF @ 10 V	-	2W (Ta), 50W (Tc)	150°C	-	-	Through Hole	ITO-220 (MP-45F)
AUIRF1404STRL MOSFET_(20V,40V) Infineon Technologies	800	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	4mOhm @ 95A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	7360 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
BTS114AE3045ANTMA1 POWER FIELD-EFFECT TRANSISTOR, 1 Infineon Technologies	12,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO220-3-5
2SK3353-AZ 2SK3353 - N-CHANNEL POWER MOSFET Renesas	3,289	RFQ	Datasheet	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	82A (Tc)	4V, 10V	9.5mOhm @ 41A, 10V	2.5V @ 1mA	90 nC @ 10 V	±20V	4650 pF @ 10 V	-	1.5W (Ta), 95W (Tc)	150°C	-	-	Through Hole	TO-220AB
RJK0601DPN-E0#T2 RJK0601DPN - N-CHANNEL MOSFET 60 Renesas	1,640	RFQ	Datasheet	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Ta)	10V	3.1mOhm @ 55A, 10V	4V @ 1mA	141 nC @ 10 V	±20V	10000 pF @ 10 V	-	200W (Tc)	150°C	-	-	Through Hole	TO-220ABS
2SK2498-AZ 2SK2498 - SWITCHING N-CHANNEL PO Renesas	414	RFQ	-	-	TO-220-3 Full Pack, Isolated Tab	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Ta)	4V, 10V	9mOhm @ 25A, 10V	2V @ 1mA	152 nC @ 10 V	±20V	3400 pF @ 10 V	-	2W (Ta), 35W (Tc)	150°C	-	-	Through Hole	ITO-220AB
FCP170N60 MOSFET N-CH 600V 22A TO220-3 Fairchild Semiconductor	800	RFQ	Datasheet	SuperFET® II	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V	170mOhm @ 11A, 10V	3.5V @ 250µA	55 nC @ 10 V	±20V	2860 pF @ 380 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IPC313N10N3RX1SA2 TRENCH >=100V Infineon Technologies	7,784	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EMB1426QMME/NOPB EMB1426 - HALF BRIDGE BASED MOSF Texas Instruments	500	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AM90N10-07B MOSFET N-CH 100V 90A TO-263 Analog Power Inc.	200	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	90A (Tc)	5.5V, 10V	7mOhm @ 45A, 10V	1V @ 250µA	114 nC @ 5.5 V	±20V	9235 pF @ 15 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263
2SK3354-AZ 2SK3354-AZ - SWITCHING N-CHANNEL Renesas	956	RFQ	Datasheet	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	83A (Tc)	4V, 10V	8mOhm @ 42A, 10V	2.5V @ 1mA	106 nC @ 10 V	±20V	6300 pF @ 10 V	-	1.5W (Ta), 100W (Tc)	150°C	-	-	Through Hole	TO-220AB
FCH25N60N POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	4,502	RFQ	Datasheet	SupreMOS™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	126mOhm @ 12.5A, 10V	4V @ 250µA	74 nC @ 10 V	±30V	3352 pF @ 100 V	-	216W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
FL06250G SICFET N-CH 650V 10.7A PDFN8x8 fastSiC	300	RFQ	Datasheet	Lightning	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	10.7A (Tc)	15V	330mOhm @ 3A, 15V	2V @ 6mA	18.2 nC @ 12 V	15V	436 pF @ 400 V	-	46.8W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	4-PDFN (8x8)

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