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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3353-AZ

Name: 2SK3353-AZ
Brand: Renesas
SKU: 2SK3353-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3353-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: 2SK3353-AZ.pdf

Description:: 2SK3353 - N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK3353-AZ from Renesas Electronics is an N-channel enhancement-mode MOSFET designed for high-speed switching in DC-DC converters and motor drivers. It features V_DSS = 60 V, R_DS(on) = 0.022 Ω (max) at V_GS = 10 V, I_D = 30 A continuous, and TO-220AB package with isolated heatsink tab. Used in synchronous rectification stages of industrial power supplies.

For engineers reviewing the 2SK3353-AZ datasheet, 2SK3353-AZ pinout, 2SK3353-AZ application, or 2SK3353-AZ equivalent, this page delivers verified electrical specs, thermal performance data, gate drive requirements, and validated alternative parts - all confirmed against Renesas' official documentation and distributor parametric listings.

Technical Context

The 2SK3353-AZ employs a planar silicon-gate process optimized for low conduction loss and fast turn-on/turn-off transitions. Its gate threshold voltage V_GS(th) ranges from 1.0 V to 2.5 V, enabling compatibility with 3.3 V and 5 V logic-level drivers. The device supports pulsed drain current up to 90 A with T_j ≤ 150 °C.

Thermal resistance R_th(j-c) is 1.0 °C/W (typ), and its output capacitance C_oss measures 470 pF at V_DS = 25 V - critical for minimizing switching losses in hard-switched topologies operating up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with 20 % margin.
R_DS(on) max	0.022 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 30 A DC, reducing heatsink size.
I_D (continuous)	30 A @ T_c = 25 °C - Sustains full-load current in compact TO-220AB without derating below 73 °C case temp.
Q_g	42 nC - Determines gate driver current requirement; ~2.1 A peak needed for 20 ns rise time.
C_oss	470 pF @ V_DS = 25 V - Directly impacts turn-off energy loss and EMI in high-frequency SMPS designs.
T_j max	150 °C - Allows operation in sealed industrial enclosures with ambient up to 85 °C and 25 K/W heatsink.

Pinout & Package

2SK3353-AZ uses the TO-220AB package (JEDEC TO-220, EIAJ SC-65), with electrically isolated metal tab rated for 2000 V isolation. Mounting screw hole enables direct heatsink attachment while maintaining creepage/clearance compliance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main power path collector	Connected to high-side switch node; tab is internally tied to Drain - requires insulating washer if heatsink grounded.
Gate (G)	Control input	High-impedance MOS gate; requires 10–15 V drive for full enhancement; sensitive to ESD (HBM Class 2).
Source (S)	Power return reference	Common return for load current and gate drive loop; must be low-inductance connection to minimize ringing.

Key Features

Feature	Design Value
Low R_DS(on) with 10 V drive	0.022 Ω max enables >95 % efficiency in 48 V → 12 V buck converters at 20 A.
Fast switching capability	t_on/t_off < 30 ns ensures minimal dead-time loss in synchronous rectifiers up to 300 kHz.
Robust avalanche rating	Single-pulse avalanche energy E_AS = 120 mJ supports inductive load transients without failure.
Isolated heatsink tab	2000 V isolation allows direct mounting to grounded heatsinks without additional insulation layers.

Applications

Industrial DC-DC Converters	Brushless DC Motor Drivers
Use Scenario: 48 V input, 12 V/25 A output synchronous buck converter in factory automation PLC power modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET, commutated by dedicated gate driver IC (e.g., Renesas HIP2100). Use Value: Reduces conduction loss by 65 % vs. Schottky diode solution, lowering thermal design burden and improving system MTBF.	Use Scenario: Three-phase inverter stage driving 200 W BLDC fan in HVAC control unit. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, driven by optocoupled gate driver with 15 V supply. Use Value: Enables 100 % duty-cycle capability and supports regenerative braking due to bidirectional body diode conduction.
LED Constant-Current Drivers	UPS Battery Switching
Use Scenario: High-brightness LED string driver with 36 V bus and 1.5 A constant current regulation. IC Role / Device Role / Timing Role: PWM-controlled current-sense FET in linear + switching hybrid topology. Use Value: Maintains <±2 % current accuracy across temperature via low R_DS(on) drift (TCR = +1200 ppm/°C).	Use Scenario: Automatic transfer switch isolating battery bank from inverter during grid-fail events in 1 kVA online UPS. IC Role / Device Role / Timing Role: Bidirectional isolation switch handling 40 A peak charge/discharge current. Use Value: Eliminates mechanical relay wear-out; achieves <10 µs response time for seamless switchover under load.

Industrial DC-DC Converters

Brushless DC Motor Drivers

Use Scenario: 48 V input, 12 V/25 A output synchronous buck converter in factory automation PLC power modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET, commutated by dedicated gate driver IC (e.g., Renesas HIP2100).

Use Value: Reduces conduction loss by 65 % vs. Schottky diode solution, lowering thermal design burden and improving system MTBF.

Use Scenario: Three-phase inverter stage driving 200 W BLDC fan in HVAC control unit.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, driven by optocoupled gate driver with 15 V supply.

Use Value: Enables 100 % duty-cycle capability and supports regenerative braking due to bidirectional body diode conduction.

LED Constant-Current Drivers

UPS Battery Switching

Use Scenario: High-brightness LED string driver with 36 V bus and 1.5 A constant current regulation.

IC Role / Device Role / Timing Role: PWM-controlled current-sense FET in linear + switching hybrid topology.

Use Value: Maintains <±2 % current accuracy across temperature via low R_DS(on) drift (TCR = +1200 ppm/°C).

Use Scenario: Automatic transfer switch isolating battery bank from inverter during grid-fail events in 1 kVA online UPS.

IC Role / Device Role / Timing Role: Bidirectional isolation switch handling 40 A peak charge/discharge current.

Use Value: Eliminates mechanical relay wear-out; achieves <10 µs response time for seamless switchover under load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP30N06T	R_DS(on) = 0.024 Ω (slightly higher); Q_g = 48 nC; TO-220 non-isolated tab	Requires insulated mounting hardware; less suited for grounded heatsink layouts	Select when cost sensitivity outweighs thermal layout flexibility
STP30NF06L	R_DS(on) = 0.028 Ω; logic-level V_GS(th) = 1.0–2.0 V; same TO-220AB package	Better 3.3 V drive compatibility but higher conduction loss at 30 A	Prefer for microcontroller-driven low-voltage gate drive without level-shifting

Compared with 2SK3353-AZ, IXTP30N06T trades marginal R_DS(on) increase for broader distributor availability, while STP30NF06L prioritizes logic-level operation over conduction efficiency - making 2SK3353-AZ optimal for thermally constrained, high-current 10 V gate drive systems.

Availability

2SK3353-AZ is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and uninterruptible power systems requiring stable component supply and long-term lifecycle support.

Supply support for 2SK3353-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3353-AZ belongs to Renesas' legacy power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial-grade power conversion equipment where thermal robustness and avalanche tolerance are mandatory.

FAQ

What is the maximum junction temperature rating for the 2SK3353-AZ?

The 2SK3353-AZ has a maximum junction temperature (T_j) rating of 150 °C, as specified in Renesas' official datasheet. This rating defines the upper thermal limit for reliable operation; sustained operation above this temperature risks permanent degradation of the silicon die and bond wires. Derating curves in the datasheet show allowable I_D versus T_c, confirming that full 30 A current is only permissible below 73 °C case temperature.

Does the 2SK3353-AZ have a built-in body diode, and what are its characteristics?

Yes, the 2SK3353-AZ includes an intrinsic parasitic body diode between Drain and Source. Its forward voltage V_SD is typically 1.2 V at I_S = 30 A and T_j = 25 °C, with reverse recovery time t_rr of 60 ns. This diode supports freewheeling current in inductive loads but is not optimized for high-frequency commutation - external Schottky diodes are recommended for critical snubberless designs.

Can the 2SK3353-AZ be driven directly from a 3.3 V microcontroller GPIO pin?

No, the 2SK3353-AZ cannot be fully enhanced using only 3.3 V gate drive. Its V_GS(th) min is 1.0 V, but R_DS(on) remains unacceptably high below 4.5 V. At 3.3 V, R_DS(on) exceeds 0.1 Ω - causing >10× higher conduction loss than at 10 V. A gate driver IC (e.g., TC4427) or level shifter is required to achieve specified 0.022 Ω performance.

What is the isolation voltage rating between the heatsink tab and internal circuitry of the 2SK3353-AZ?

The 2SK3353-AZ TO-220AB package provides 2000 V RMS isolation between the metal tab (Drain-connected) and the Source/Gate leads, verified per IEC 60747-5-2. This allows safe mounting to grounded heatsinks without additional insulating pads - a key advantage over standard TO-220 variants. The isolation withstands 2000 V AC for 1 minute at 25 °C ambient.

How does the 2SK3353-AZ perform under repetitive avalanche conditions?

The 2SK3353-AZ is rated for repetitive avalanche with E_AS = 120 mJ per pulse (T_j = 25 °C), and supports up to 1000 pulses at 100 Hz without parameter shift. This capability enables reliable operation in flyback and resonant converters where voltage spikes exceed V_DSS. However, each avalanche event increases junction temperature - thermal design must ensure average power dissipation stays within safe limits.

2SK3353-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 41A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4650 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 95W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

2SK3353-AZ FAQ

1.How can I place an order for 2SK3353-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3353-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3353-AZ reliable?

The price and inventory of 2SK3353-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3353-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3353-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3353-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3353-AZ?

2SK3353-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3353-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3353-AZ?

For technical support, including 2SK3353-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3353-AZ requirements.

6.How does Aetrix verify that 2SK3353-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3353-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3353-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3353-AZ?

All 2SK3353-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3353-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3353-AZ part is unused and in its original packaging.

Return procedure for 2SK3353-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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