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Renesas 2SK3354-AZ
- Part No.:
- 2SK3354-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
2SK3354-AZ.pdf
- Description:
- 2SK3354-AZ - SWITCHING N-CHANNEL
- Quantity:
- Payment:
- Shipping:
Inventory:956
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Product details
Overview
2SK3354-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive H-bridge legs, featuring RDS(on)1 = 8.0 mΩ max at VGS = 10 V / ID = 42 A, 60 V VDSS, and built-in gate protection diode. It supports ±83 A continuous drain current at TC = 25°C and operates up to 150°C channel temperature.
For engineers reviewing the 2SK3354-AZ datasheet, 2SK3354-AZ pinout, 2SK3354-AZ application, or 2SK3354-AZ equivalent, this device is selected for high-efficiency, high-reliability power conversion in industrial motor drives, uninterruptible power supplies, and automotive body control modules where low conduction loss and robust avalanche capability (EAS = 302 mJ) are critical.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for fast switching with low gate charge (QG = 106 nC) and minimized reverse transfer capacitance (Crss = 490 pF). Its forward transfer admittance |yfs| reaches 59 S at ID = 42 A, enabling strong gate drive responsiveness under high-load conditions.
The integrated gate-source ESD protection diode provides transient immunity but requires external clamping for overvoltage events exceeding ±20 V. Avalanche ruggedness is validated per single-pulse test (IAS = 55 A, VDD = 30 V, RG = 25 Ω), supporting reliable operation in inductive load switching without snubber circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 48 V nominal bus systems with 20% margin. |
| RDS(on)1 | 8.0 mΩ max - Enables ≤3.5 W conduction loss at 42 A, reducing heatsink requirements. |
| ID(DC) | ±83 A at TC = 25°C - Supports high-power motor phase currents without derating. |
| QG | 106 nC - Determines gate driver power demand; compatible with standard 1–2 A peak drivers. |
| EAS | 302 mJ - Absorbs inductive energy during turn-off, eliminating need for external avalanche-rated FETs. |
| Ciss | 6300 pF typ - Impacts high-frequency switching efficiency and gate drive loop stability. |
| Tch max | 150°C - Allows operation in sealed enclosures with limited airflow in industrial environments. |
Pinout & Package
2SK3354-AZ is supplied in TO-220AB package with isolated metal tab (Drain-connected fin). The case is electrically connected to Drain, requiring insulated mounting hardware when Drain is not at chassis ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives voltage-controlled signal; requires <106 nC charge for full enhancement; protected by internal Zener diode. |
| 2 (Drain) | High-side current path | Connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; low-inductance layout critical for switching stability. |
| 4 (Fin/Drain) | Thermal & electrical interface | Integral heatsink interface; thermal resistance Rth(ch-C) = 1.25°C/W enables 100 W dissipation at ΔT = 125°C. |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) | 8.0 mΩ max at 10 V gate drive reduces conduction losses by >30% vs. legacy 12 mΩ MOSFETs in 48 V systems. |
| Built-in gate protection diode | Zener-clamped gate-source junction limits transient overvoltage to ±20 V, simplifying ESD design in motor control PCBs. |
| High avalanche energy rating | 302 mJ single-pulse capability allows safe interruption of 55 A inductive current without external snubbers. |
| Low Ciss/Crss ratio | 6300 pF / 490 pF = 12.9 - Improves Miller immunity and enables stable 100 kHz+ switching in half-bridge topologies. |
| Wide VGS(off) range | 1.5–2.5 V threshold ensures predictable turn-on across –50°C to +150°C, supporting automotive under-hood use. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies |
|---|---|
|
Use Scenario: High-current H-bridge inverter for 3-phase BLDC motors in CNC machine tools and conveyor systems. IC Role / Device Role / Timing Role: Primary-side power switch in low-side and high-side positions; handles bidirectional 83 A peak current with <1500 ns rise time. Use Value: 8.0 mΩ RDS(on) cuts I²R losses by 40% vs. comparable 12 mΩ devices, enabling 10°C lower MOSFET junction temperature at full load. |
Use Scenario: Output stage switching in online double-conversion UPS delivering 5 kVA with >94% efficiency. IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch; leverages low QG and fast trr (55 ns) for reduced dead-time losses. Use Value: 302 mJ avalanche rating eliminates need for external clamping diodes during battery disconnect transients, reducing BOM count by 2 components. |
| Automotive Body Control Modules | DC-DC Converters for Telecom |
|
Use Scenario: High-side load switch for headlight and HVAC blower control in 12 V/24 V vehicle platforms. IC Role / Device Role / Timing Role: Load-switching MOSFET with integrated gate protection; withstands load-dump pulses up to ISO 7637-2 Pulse 5a. Use Value: Gate Zener protection and 150°C Tch rating enable direct placement near engine bay electronics without additional thermal shielding. |
Use Scenario: Primary-side switch in 48 V to 12 V isolated DC-DC converters for 5G base station power distribution. IC Role / Device Role / Timing Role: High-frequency (100–200 kHz) hard-switched power transistor; benefits from low Ciss and 59 S |yfs for tight duty-cycle control. Use Value: 6300 pF Ciss and 490 pF Crss reduce gate drive power consumption by 22% compared to industry-standard 7500/600 pF alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH60N60P | 600 V VDSS, 60 mΩ RDS(on), TO-247 package - higher voltage rating but 7.5× higher on-resistance. | Designed for 400 V DC-link inverters; unsuitable for 48 V systems due to excessive conduction loss. | Select only if system requires >300 V blocking voltage; avoid for 60 V-class designs due to efficiency penalty. |
| IRFP4668PBF | 60 V VDSS, 6.0 mΩ RDS(on), TO-247 - lower RDS(on) but no integrated gate protection diode. | Requires external gate clamp circuitry; lacks validated avalanche energy spec (EAS not rated). | Prefer when ultimate efficiency is prioritized and board space allows discrete ESD protection; verify avalanche robustness via system-level testing. |
Compared with IXFH60N60P and IRFP4668PBF, the 2SK3354-AZ delivers optimal balance of low RDS(on), integrated gate protection, and guaranteed avalanche performance for 48–60 V industrial and automotive power stages - making it the most suitable choice where reliability under inductive stress and simplified layout are design priorities.
Availability
2SK3354-AZ is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and automotive body control modules requiring stable component supply and long-term manufacturing continuity.
Supply support for 2SK3354-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SK3354-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-current, high-reliability switching in industrial automation and transportation equipment where thermal robustness and avalanche tolerance are mandatory.
FAQ
What is the maximum continuous drain current rating for the 2SK3354-AZ at 100°C case temperature?
The 2SK3354-AZ supports 55 A continuous drain current at TC = 100°C, derived from its derating curve (100 W → 55 A at 100°C using RDS(on) ≈ 12 mΩ). This value assumes proper heatsinking and is confirmed in the Forward Bias Safe Operating Area graph on page 3 of D14131EJ4V0DS. At this condition, the 2SK3354-AZ maintains safe operation without exceeding 150°C channel temperature.
Does the 2SK3354-AZ have a specified reverse recovery time for its body diode?
Yes, the 2SK3354-AZ body diode has a reverse recovery time (trr) of 55 ns at IF = 83 A, VGS = 0 V, and di/dt = 100 A/µs, as measured per the test conditions on page 2 of the datasheet. This parameter is critical for synchronous rectification and freewheeling performance in bridge configurations, and the 2SK3354-AZ's trr enables efficient operation up to 200 kHz switching frequencies.
Can the 2SK3354-AZ be used in parallel configurations for higher current handling?
Yes, the 2SK3354-AZ supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing - confirmed by the RDS(on) vs. channel temperature curve on page 5. For stable operation, use matched gate resistors (≤10 Ω), symmetrical PCB layout, and shared heatsink mounting. Each 2SK3354-AZ in parallel retains its full 302 mJ avalanche rating, provided layout inductance is minimized.
What is the gate threshold voltage range for the 2SK3354-AZ, and how does it vary with temperature?
The 2SK3354-AZ has a gate threshold voltage (VGS(off)) range of 1.5–2.5 V at TA = 25°C, with typical drift to 1.0–2.0 V at 150°C, as shown in the VGS(off) vs. channel temperature graph on page 5. This stable, predictable shift ensures reliable turn-on behavior across automotive and industrial temperature ranges, and the 2SK3354-AZ remains fully enhanced above 4 V gate drive even at maximum operating temperature.
Is the TO-220AB package of the 2SK3354-AZ lead-free and RoHS-compliant?
Yes, the 2SK3354-AZ TO-220AB package meets EU RoHS Directive requirements, as confirmed by Renesas' environmental compliance documentation. Lead-free termination (matte tin plating) and halogen-free molding compound are standard. No exemptions apply, and the device carries full RoHS certification - essential for industrial and automotive deployments where regulatory compliance is mandatory.
2SK3354-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 100W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
2SK3354-AZ FAQ
1.How can I place an order for 2SK3354-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3354-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3354-AZ reliable?
The price and inventory of 2SK3354-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3354-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3354-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3354-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3354-AZ?
2SK3354-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3354-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3354-AZ?
For technical support, including 2SK3354-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3354-AZ requirements.
6.How does Aetrix verify that 2SK3354-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3354-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3354-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3354-AZ?
All 2SK3354-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3354-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3354-AZ part is unused and in its original packaging.
Return procedure for 2SK3354-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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