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Renesas RJK0601DPN-E0#T2
- Part No.:
- RJK0601DPN-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
RJK0601DPN-E0#T2.pdf
- Description:
- RJK0601DPN - N-CHANNEL MOSFET 60
- Quantity:
- Payment:
- Shipping:
Inventory:1,640
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Product details
Overview
RJK0601DPN-E0#T2 from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC conversion and motor drive switching. It delivers 60 V VDSS, 110 A continuous drain current, and a low 2.5 mΩ typical RDS(on) at VGS = 10 V in a TO-220AB package, enabling efficient high-power switching in industrial power supplies.
For engineers reviewing the RJK0601DPN-E0#T2 datasheet, RJK0601DPN-E0#T2 pinout, RJK0601DPN-E0#T2 application, or RJK0601DPN-E0#T2 equivalent, key selection criteria include avalanche energy rating (227 mJ), gate charge (141 nC), body-diode reverse recovery time (65 ns), thermal impedance (0.63 °C/W), and safe operating area limits under pulse conditions.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its 10000 pF input capacitance and 500 pF reverse transfer capacitance support stable gate drive with moderate Rg (1.6 Ω typ.), while the 53 ns turn-on delay and 27 ns rise time enable operation up to several hundred kHz in hard-switched topologies.
The device integrates a robust body diode with 110 A reverse current capability and 0.85 V forward voltage at 110 A, suitable for synchronous rectification or freewheeling in buck converters and H-bridge motor drivers. Thermal performance is defined by channel-to-case impedance of 0.63 °C/W and 150 °C maximum channel temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems. |
| ID (continuous) | 110 A - Continuous drain current at Tc = 25 °C; requires heatsinking to sustain full rating. |
| RDS(on) typ. | 2.5 mΩ at VGS = 10 V - Conduction loss of 30.25 W at 110 A; dominates thermal design in high-duty-cycle applications. |
| Qg | 141 nC - Total gate charge determines driver strength requirement; ~1.4 A peak needed for 100 ns switching transition. |
| EAS | 227 mJ - Single-pulse avalanche energy at Tch = 25 °C; enables robustness against inductive switching transients. |
| trr | 65 ns - Body diode reverse recovery time; impacts switching loss and EMI in non-synchronous rectified topologies. |
| θch-c | 0.63 °C/W - Channel-to-case thermal resistance; defines minimum heatsink requirement for thermal management. |
Pinout & Package
Package: TO-220AB (RENESAS code PRSS0004AG-A), through-hole, single-ended heat sink mounting, 2.1 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (left) | Gate | Control terminal; accepts 10 V logic-level drive; 1.6 Ω internal gate resistance reduces ringing risk. |
| 2 & 4 (center & right tab) | Drain | Main high-side current path; electrically connected to metal tab for direct heatsink coupling. |
| 3 (right) | Source | Power return node; referenced to PCB ground plane; forms common node with driver return path. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 2.5 mΩ typ. at 10 V gate drive enables <30 W conduction loss at 110 A, reducing heatsink size in compact power modules. |
| High avalanche ruggedness | 227 mJ single-pulse rating allows reliable operation under inductive load interruption without external snubbers. |
| Fast switching | 53 ns turn-on delay + 27 ns rise time supports >300 kHz PWM in hard-switched DC-DC converters with minimized switching loss. |
| Integrated body diode | 65 ns trr and 0.85 V VDF at 110 A provide predictable freewheeling behavior in half-bridge motor drives and buck regulators. |
| Thermal efficiency | 0.63 °C/W θch-c enables 200 W channel dissipation at ΔT = 126 °C, supporting high-power density designs with forced-air cooling. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drives |
|---|---|
Use Scenario: 48 V input to 12 V/50 A isolated or non-isolated step-down converter in factory automation PLC power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology; switched at 200–300 kHz with 10 V gate drive. Use Value: 2.5 mΩ RDS(on) reduces conduction loss by >40% versus 4.5 mΩ alternatives, improving full-load efficiency from 92% to 94.5%. | Use Scenario: High-current phase-leg switch in 3-phase BLDC inverter for HVAC blowers or conveyor drives (48–60 V bus). IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation; handles 110 A peak phase current with 65 ns body diode recovery. Use Value: 227 mJ avalanche energy prevents failure during sudden load dump or short-circuit events without added protection circuitry. |
| Uninterruptible Power Supplies | Electric Vehicle Onboard Chargers |
Use Scenario: Bidirectional DC-DC stage in UPS battery backup system interfacing 48 V battery with 380 V DC link. IC Role / Device Role / Timing Role: Synchronous rectifier in boost mode; conducts 110 A continuously with low VDS(on) to minimize I²R loss. Use Value: 0.63 °C/W thermal impedance allows direct mounting to chassis heatsink, eliminating need for thermal interface pads in space-constrained enclosures. | Use Scenario: Primary-side switch in LLC resonant converter of 3.3 kW OBC charging 400 V battery from 230 V AC grid. IC Role / Device Role / Timing Role: Hard-switched high-side switch operating at 100–200 kHz; subjected to repetitive avalanche stress during zero-voltage switching transitions. Use Value: Confirmed 55 A IAP and 227 mJ EAS ratings ensure reliability over 10,000-hour lifetime under partial ZVS conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH110N06S3 | RDS(on) = 3.0 mΩ (typ), Qg = 125 nC, TO-247 package, higher thermal resistance (0.75 °C/W). | Higher conduction loss and larger footprint; better suited for lower-frequency, higher-voltage margin designs. | Select when board layout accommodates TO-247 and thermal budget permits 0.75 °C/W θjc. |
| IRFP4468PBF | RDS(on) = 2.7 mΩ (typ), Qg = 160 nC, TO-247 package, no published EAS rating. | Higher gate charge increases driver complexity; lacks documented avalanche energy spec for transient-heavy applications. | Prefer only in cost-sensitive, non-avalanche-critical 60 V switching where gate drive capability exceeds 1.6 A peak. |
Compared with IXTH110N06S3 and IRFP4468PBF, the RJK0601DPN-E0#T2 offers the lowest RDS(on) in TO-220AB, verified 227 mJ avalanche energy, and balanced Qg/RDS(on) ratio-making it optimal for space-constrained, high-efficiency 48–60 V industrial power stages requiring field-proven ruggedness.
Availability
RJK0601DPN-E0#T2 is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drives, and uninterruptible power supplies requiring stable component supply, long-lifecycle assurance, and traceable sourcing.
Supply support for RJK0601DPN-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The RJK series targets high-current, medium-voltage power switching applications, with design focus on low RDS(on), robust avalanche performance, and thermal efficiency in standard discrete packages.
FAQ
What is the maximum continuous drain current rating for RJK0601DPN-E0#T2?
The RJK0601DPN-E0#T2 is rated for 110 A continuous drain current at case temperature Tc = 25 °C. This rating assumes proper heatsinking to maintain the case temperature; derating applies above 25 °C per the power vs. temperature curve on page 3 of the datasheet. At Tc = 100 °C, the usable ID drops to approximately 60 A.
Does RJK0601DPN-E0#T2 support logic-level gate drive?
No, the RJK0601DPN-E0#T2 is not a logic-level MOSFET. Its gate threshold voltage VGS(off) ranges from 2.0 V to 4.0 V, and its 2.5 mΩ RDS(on) is specified at VGS = 10 V. Reliable enhancement requires ≥8 V gate drive; operation below 6 V results in significantly increased RDS(on) and thermal risk.
What is the avalanche energy rating of RJK0601DPN-E0#T2 and under what conditions is it valid?
The RJK0601DPN-E0#T2 has a single-pulse avalanche energy rating of 227 mJ, measured at L = 100 μH, Tch = 25 °C, and Rg ≥ 50 Ω. This value decreases with increasing channel temperature-page 5 of the datasheet shows EAS derating to ~150 mJ at Tch = 125 °C. Repetitive avalanche is not characterized.
Can RJK0601DPN-E0#T2 be used in synchronous rectification applications?
Yes, the RJK0601DPN-E0#T2 can serve as a synchronous rectifier due to its low RDS(on) and integrated body diode with 65 ns reverse recovery time and 0.85 V forward voltage at 110 A. However, its body diode is not optimized for ultra-fast recovery; dedicated SR controllers must account for trr-induced shoot-through risk in high-frequency designs.
What is the thermal resistance from channel to case for RJK0601DPN-E0#T2?
The channel-to-case thermal resistance θch-c of the RJK0601DPN-E0#T2 is 0.63 °C/W, measured under steady-state conditions with the device mounted to a large copper heatsink. This value assumes full contact between the metal tab (pins 2 and 4) and the heatsink surface; thermal interface material and mounting pressure directly impact real-world performance.
RJK0601DPN-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 141 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10000 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220ABS
RJK0601DPN-E0#T2 FAQ
1.How can I place an order for RJK0601DPN-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK0601DPN-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK0601DPN-E0#T2 reliable?
The price and inventory of RJK0601DPN-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK0601DPN-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK0601DPN-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK0601DPN-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK0601DPN-E0#T2?
RJK0601DPN-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK0601DPN-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK0601DPN-E0#T2?
For technical support, including RJK0601DPN-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK0601DPN-E0#T2 requirements.
6.How does Aetrix verify that RJK0601DPN-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK0601DPN-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK0601DPN-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK0601DPN-E0#T2?
All RJK0601DPN-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK0601DPN-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK0601DPN-E0#T2 part is unused and in its original packaging.
Return procedure for RJK0601DPN-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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