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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
RJK5013DPP-E0#T2 RJK5013DPP-E0#T2 - SILICON N CHA Renesas	17,001	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	14A (Ta)	10V	465mOhm @ 7A, 10V	4.5V @ 1mA	38 nC @ 10 V	±30V	1450 pF @ 25 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220FP
RJK5013DPP-00#T2 RJK5013DPP - N CHANNEL MOSFET Renesas	2,494	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	14A (Ta)	10V	465mOhm @ 7A, 10V	4.5V @ 1mA	38 nC @ 10 V	±30V	1450 pF @ 25 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220FN
AC3M0060065K SIC MOSFET N-CH 650V 38A TO247-4 APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	38A	15V	79mOhm @ 13.2A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	150W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0060065D SIC MOSFET N-CH 650V 30A TO247-3 APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A	15V	79mOhm @ 13.2A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	150W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AUIRFSL8407 MOSFET N-CH 40V 195A TO262 International Rectifier	1,288	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	10V	2mOhm @ 100A, 10V	4V @ 150µA	225 nC @ 10 V	±20V	7330 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
RJK5014DPP-E0#T2 RJK5014DPP-E0#T2 - SILICON N CHA Renesas	12,236	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	19A (Ta)	10V	390mOhm @ 9.5A, 10V	4.5V @ 1mA	46 nC @ 10 V	±30V	1800 pF @ 25 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220FP
FL06150G SICFET N-CH 650V 15A PDFN8x8 fastSiC	300	RFQ	Datasheet	Lightning	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	15A (Tc)	15V	150mOhm @ 5A, 15V	2V @ 8mA	29.5 nC @ 12 V	15V	672 pF @ 400 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	4-PDFN (8x8)
FDMF6808N DRMOS MODULE onsemi	3,000	RFQ	-	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NP110N055PUJ-E1B-AY NP110N055PUJ-E1B-AY - SWITCHINGN Renesas	1,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	2.4mOhm @ 55A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	14250 pF @ 25 V	-	1.8W (Ta), 288W (Tc)	175°C	-	-	Surface Mount	TO-263-3
QS1700SCM8 1700v 8AMP SiC Mosfet Quest Semi	2,500	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	8A	20V	100mOhm @ 2A, 20V	4V @ 10mA	16 nC @ 1200 V	-	142 pF @ 1000 V	-	88W	-55°C ~ 175°C	Automotive	-	Through Hole	PG-TO247-3
RJL5014DPP-E0#T2 RJL5014DPP-E0#T2 - SILICON N CHA Renesas	2,240	RFQ	-	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	19A (Ta)	10V	400mOhm @ 9.5A, 10V	4V @ 1mA	43 nC @ 10 V	±30V	1700 pF @ 25 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220FP
AUIRF1404 AUIRF1404 - 20V-40V N-CHANNEL AU International Rectifier	24,709	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	10V	4mOhm @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	5669 pF @ 25 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AUIRF1404 AUIRF1404 - 20V-40V N-CHANNEL AU Infineon Technologies	9,000	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	10V	4mOhm @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	5669 pF @ 25 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
GC041N65QF MOSFET N-CH 650V 70A TO-247 Goford Semiconductor	3,000	RFQ	Datasheet	-	TO-247-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	70A (Tc)	10V	43mOhm @ 20A, 10V	5V @ 250µA	160 nC @ 10 V	±30V	7668 pF @ 400 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
AC3M0045065D SIC MOSFET N-CH 650V 50A TO247-3 APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	-	+19V, -8V	-	-	176W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0045065K SIC MOSFET N-CH 650V 50A TO247-4 APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	-	+19V, -8V	-	-	176W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0040120K SIC MOSFET N-CH 1200V 67A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	67A	15V	53.5mOhm @ 33.3A, 15V	3.6V @ 9.2mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC2M0040120D SIC MOSFET N-CH 1200V 57A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A	20V	52mOhm @ 40A, 20V	4V @ 10mA	-	+25V, -10V	-	-	278W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0040120D SIC MOSFET N-CH 1200V 67A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	67A	15V	53.5mOhm @ 33.3A, 15V	3.6V @ 9.5mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0032120D SIC MOSFET N-CH 1200V 64A TO247- APSEMI	10,000	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	64A	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	-	+19V, -8V	-	-	283W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3

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