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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP110N055PUJ-E1B-AY

Name: NP110N055PUJ-E1B-AY
Brand: Renesas
SKU: NP110N055PUJ-E1B-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP110N055PUJ-E1B-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP110N055PUJ-E1B-AY.pdf

Description:: NP110N055PUJ-E1B-AY - SWITCHINGN

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Inventory:1,000

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Product details

Overview

NP110N055PUJ-E1B-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET in TO-263 (MP-25ZP) package, designed for high-current DC-DC converters and automotive motor control. It delivers 110 A DC drain current, 55 V V_DSS, and ultra-low R_DS(on) of 2.4 mΩ max at V_GS = 10 V and I_D = 55 A.

For engineers reviewing the NP110N055PUJ-E1B-AY datasheet, NP110N055PUJ-E1B-AY pinout, NP110N055PUJ-E1B-AY application, or NP110N055PUJ-E1B-AY equivalent, key selection criteria include avalanche energy rating (435 mJ), thermal resistance (R_th(ch-C) = 0.52 °C/W), gate charge (Q_G = 230 nC max), and Pb-free TO-263 packaging for automotive-grade reliability.

Technical Context

This device uses a trench-gate silicon process optimized for low conduction loss and fast switching in high-duty-cycle applications. Its 55 V breakdown voltage supports 48 V automotive systems and industrial 24–48 V rails, while the 175 °C channel temperature rating enables operation in under-hood environments with minimal derating.

The integrated body diode exhibits 1.5 V forward voltage at 110 A and 64 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge topologies. Avalanche ruggedness-validated at 435 mJ single-pulse and 66 A repetitive current-ensures robustness against inductive switching transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Supports 48 V nominal bus systems with 15 % margin for load dump transients.
R_DS(on) max	2.4 mΩ @ V_GS = 10 V, I_D = 55 A - Enables <1.5 W conduction loss at 55 A, reducing heatsink requirements.
I_D(DC)	±110 A @ T_C = 25 °C - Sustains continuous high-current loads in motor drivers and battery disconnect switches.
Q_G max	230 nC - Determines gate driver power requirement; compatible with standard 2 A peak drivers for ≤500 kHz switching.
E_AS	435 mJ - Withstands single inductive energy spikes up to 28 V × 66 A × 250 ns without failure.
R_th(ch-C)	0.52 °C/W - Enables >250 W dissipation with modest heatsinking; critical for compact power module integration.
AEC-Q101	Qualified - Validated for automotive temperature cycling, humidity, and mechanical shock per JESD22 standards.

Pinout & Package

TO-263 (MP-25ZP) surface-mount package with exposed drain tab for thermal and electrical performance. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source; Pin 4: Drain (tab extension). The finned drain tab provides low-inductance, high-current path and direct thermal coupling to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 9500 pF typ. dictates gate resistor selection for EMI control.
2 & 4 (Drain)	Main high-side current path	Exposed copper tab connects directly to PCB ground plane or heatsink; carries full load current and dissipates heat.
3 (Source)	Reference node for gate drive	Serves as return path for load current and gate drive loop; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.4 mΩ max enables >98 % efficiency in 48 V/50 A buck converters at 100 kHz.
Avalanche-rated	435 mJ single-pulse energy tolerance eliminates need for external clamping in brushed DC motor H-bridges.
Automotive-qualified	AEC-Q101 certification ensures reliability across −40 °C to +150 °C ambient in engine control units and ADAS power stages.
Low Q_G/Q_GD ratio	Q_GD/Q_G ≈ 20 % improves hard-switching efficiency and reduces Miller-induced shoot-through risk.
Pb-free TO-263	RoHS-compliant pure Sn plating meets automotive ELV Directive and supports lead-free reflow (260 °C peak).

Applications

Automotive DC-DC Converter	Industrial Motor Drive
Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with 50 % duty cycle. Use Value: 2.4 mΩ R_DS(on) limits conduction loss to 6.6 W at 55 A, enabling natural convection cooling in space-constrained ECUs.	Use Scenario: Half-bridge inverter driving 3 kW BLDC motor in automated guided vehicle (AGV). IC Role / Device Role / Timing Role: Low-side switching element handling 110 A peak phase current with 100 ns turn-off delay. Use Value: 0.52 °C/W thermal resistance allows 288 W dissipation at T_C = 100 °C, eliminating forced air cooling.
Server PSU OR-ing FET	Battery Protection Switch
Use Scenario: Hot-swap OR-ing diode replacement in 48 V server power distribution unit. IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch controlling power path between redundant PSUs. Use Value: 435 mJ avalanche rating absorbs fault currents during hot-insertion transients without latch-up or destruction.	Use Scenario: Main discharge switch in 48 V lithium-ion battery pack with overcurrent cutoff. IC Role / Device Role / Timing Role: Primary current-handling FET triggered by protection IC during >150 A short-circuit events. Use Value: 440 A pulse rating and 175 °C channel limit ensure safe interruption of 200 A faults within 10 μs without thermal runaway.

Automotive DC-DC Converter

Industrial Motor Drive

Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with 50 % duty cycle.

Use Value: 2.4 mΩ R_DS(on) limits conduction loss to 6.6 W at 55 A, enabling natural convection cooling in space-constrained ECUs.

Use Scenario: Half-bridge inverter driving 3 kW BLDC motor in automated guided vehicle (AGV).

IC Role / Device Role / Timing Role: Low-side switching element handling 110 A peak phase current with 100 ns turn-off delay.

Use Value: 0.52 °C/W thermal resistance allows 288 W dissipation at T_C = 100 °C, eliminating forced air cooling.

Server PSU OR-ing FET

Battery Protection Switch

Use Scenario: Hot-swap OR-ing diode replacement in 48 V server power distribution unit.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch controlling power path between redundant PSUs.

Use Value: 435 mJ avalanche rating absorbs fault currents during hot-insertion transients without latch-up or destruction.

Use Scenario: Main discharge switch in 48 V lithium-ion battery pack with overcurrent cutoff.

IC Role / Device Role / Timing Role: Primary current-handling FET triggered by protection IC during >150 A short-circuit events.

Use Value: 440 A pulse rating and 175 °C channel limit ensure safe interruption of 200 A faults within 10 μs without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	R_DS(on) = 2.1 mΩ @ 10 V but rated only to 40 V V_DSS; no AEC-Q101 qualification.	Not suitable for 48 V automotive load dump; limited to 36 V industrial supplies.	Select only for cost-sensitive 24–36 V non-automotive systems where avalanche rating is secondary.
IXFN120N50P3	500 V V_DSS, higher R_DS(on) (5.5 mΩ), TO-247 package; not AEC-Q101 qualified.	Designed for 400 V PV inverters-not optimized for 48 V high-current conduction efficiency.	Choose only when higher voltage blocking is required; avoid for automotive 48 V due to larger footprint and lower current density.

Compared with STL220N5LF8AG and IXFN120N50P3, the NP110N055PUJ-E1B-AY uniquely balances 55 V rating, 2.4 mΩ on-resistance, AEC-Q101 compliance, and TO-263 thermal performance-making it the only option qualified for high-current 48 V automotive power stages requiring both efficiency and ruggedness.

Availability

NP110N055PUJ-E1B-AY is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and battery protection circuits requiring stable component supply and long-term lifecycle support.

Supply support for NP110N055PUJ-E1B-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The NP110N055PUJ-E1B-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12–48 V vehicle electrification systems.

FAQ

What is the maximum continuous drain current rating for NP110N055PUJ-E1B-AY?

The NP110N055PUJ-E1B-AY is rated for ±110 A DC drain current at case temperature T_C = 25 °C. This rating assumes adequate heatsinking; derating applies above 25 °C per the datasheet's PT vs. TC curve. At T_C = 100 °C, the usable DC current drops to approximately 75 A. The NP110N055PUJ-E1B-AY must be mounted on ≥200 mm² of 2 oz copper with thermal vias to sustain its full 110 A rating.

Is NP110N055PUJ-E1B-AY suitable for synchronous rectification in a 48 V buck converter?

Yes, the NP110N055PUJ-E1B-AY is well-suited for synchronous rectification in 48 V buck converters due to its 2.4 mΩ R_DS(on), low Q_GD/Q_G ratio (≈20 %), and fast 30 ns fall time. Its body diode VF(S-D) = 1.5 V at 110 A and trr = 64 ns minimize reverse recovery losses. For optimal performance, the NP110N055PUJ-E1B-AY requires gate drive synchronized to the high-side switch with dead-time control to prevent shoot-through.

Does NP110N055PUJ-E1B-AY have built-in ESD protection?

No, the NP110N055PUJ-E1B-AY does not integrate ESD protection circuitry. Its gate oxide is sensitive to static discharge, as noted in the datasheet's "Remark" section. Handling requires strict adherence to J-STD-001 and IPC-A-610 Class 3 ESD controls: grounded workstations, ionizers, and wrist straps. Board-level TVS diodes or RC snubbers on the gate line are recommended for systems exposed to connector hot-plug or cable discharge events.

What is the gate threshold voltage range for NP110N055PUJ-E1B-AY?

The NP110N055PUJ-E1B-AY has a gate threshold voltage V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA and V_DS = V_GS. Typical value is 3.0 V. This range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers while maintaining noise immunity. At V_GS = 4.5 V, the device delivers ~70 % of its rated R_DS(on); full enhancement requires ≥10 V drive, as specified in the NP110N055PUJ-E1B-AY datasheet.

Can NP110N055PUJ-E1B-AY replace older NEC part numbers like UPD110N055?

No, NP110N055PUJ-E1B-AY is not a drop-in replacement for legacy NEC parts such as UPD110N055. While both are 55 V, 110 A N-channel MOSFETs, the NP110N055PUJ-E1B-AY uses a newer trench process yielding lower R_DS(on) (2.4 mΩ vs. 3.2 mΩ) and improved Q_G (230 nC vs. 290 nC), but with different SOA and avalanche characteristics. Layout changes and gate drive tuning are required; the NP110N055PUJ-E1B-AY must be validated per application per Renesas' migration guidelines.

NP110N055PUJ-E1B-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 288W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-3

NP110N055PUJ-E1B-AY FAQ

1.How can I place an order for NP110N055PUJ-E1B-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP110N055PUJ-E1B-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP110N055PUJ-E1B-AY reliable?

The price and inventory of NP110N055PUJ-E1B-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP110N055PUJ-E1B-AY is usually 5 days.

3.What payment methods are accepted for NP110N055PUJ-E1B-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP110N055PUJ-E1B-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP110N055PUJ-E1B-AY?

NP110N055PUJ-E1B-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP110N055PUJ-E1B-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP110N055PUJ-E1B-AY?

For technical support, including NP110N055PUJ-E1B-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP110N055PUJ-E1B-AY requirements.

6.How does Aetrix verify that NP110N055PUJ-E1B-AY is sourced from the original manufacturer or authorized distributors?

All NP110N055PUJ-E1B-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP110N055PUJ-E1B-AY meets industry standards.

7.What is the process for return or replacement of NP110N055PUJ-E1B-AY?

All NP110N055PUJ-E1B-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP110N055PUJ-E1B-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP110N055PUJ-E1B-AY part is unused and in its original packaging.

Return procedure for NP110N055PUJ-E1B-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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