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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPC313N10N3RX1SA2

Name: IPC313N10N3RX1SA2
Brand: Infineon Technologies
SKU: IPC313N10N3RX1SA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPC313N10N3RX1SA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPC313N10N3RX1SA2.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPC313N10N3RX1SA2 from Infineon Technologies is an N-channel enhancement-mode silicon power MOSFET bare die optimized for high-current, low-R_DS(on) switching in DC-DC converters and motor drives. It features 100 V V_BRDSS, typ. 1.9 mΩ R_DS(on) at V_GS = 10 V, 220 µm thickness, 6 × 5.2 mm² die size, and integrated body diode with V_SD = 1.0–1.2 V at I_F = 1 A.

For engineers reviewing the IPC313N10N3RX1SA2 datasheet, IPC313N10N3RX1SA2 pinout (source/gate/drain terminals), IPC313N10N3RX1SA2 application in synchronous rectification or half-bridge topologies, or IPC313N10N3RX1SA2 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified wafer-level electrical specs, thermal and mechanical die data, and validated alternative bare dies for hybrid module assembly.

Technical Context

This bare die operates in enhancement mode with gate threshold voltage V_GS(th) of 2.0–3.5 V and exhibits low gate charge due to AlCu frontside metallization and NiV backside metallization. Its 220 µm thickness enables efficient heat transfer in stacked or embedded packaging configurations.

Wafer-level testing confirms single-pulse avalanche energy E_AS = 45 mJ at I_D = 30 A with R_GS = 25 Ω, and zero-gate-voltage drain leakage I_DSS ≤ 1 µA at V_DS = 100 V - critical for high-reliability industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	100 V - maximum blocking voltage before avalanche onset; supports 48 V bus systems with 2× safety margin
R_DS(on)	1.9 mΩ (typ.) at V_GS = 10 V - enables <1 W conduction loss at 20 A continuous drain current
V_GS(th)	2.7 V (typ.) - ensures reliable turn-on with standard 3.3 V or 5 V gate drivers
Die size	6 × 5.2 mm² - matches P-TO263-3 package footprint for direct die attach in hybrid modules
Thickness	220 µm - optimized for thermal resistance in flip-chip or solder-bonded assemblies
E_AS	45 mJ (single-pulse) - withstands inductive switching surges in motor control without external snubbers

Pinout & Package

IPC313N10N3RX1SA2 is supplied as a bare die with no molded package. Die mounting uses solder or epoxy die attach; frontside metallization is AlCu, backside is NiV. Passivation is nitride on edge structure only.

Pin/Terminal	Circuit Role	Design Meaning
Drain (backside)	Power return path / heat sink interface	Backside NiV metallization enables direct thermal coupling to heatsink or DBC substrate
Source (frontside)	Reference node for gate drive and current sensing	Frontside AlCu pad allows wire bonding or clip attach; defines local ground reference
Gate (frontside)	Control terminal for channel modulation	Low-capacitance AlCu pad supports fast switching with minimal gate drive energy

Key Features

Feature	Design Value
N-channel enhancement mode	Enables standard high-side or low-side switch configuration without external bias circuitry
Wafer-level R_DS(on) test	Guarantees 1.9 mΩ typical on-resistance prior to packaging - reduces post-assembly binning yield loss
Electrostatic discharge sensitivity (JEDEC)	Requires Class 1B ESD handling - mandates grounded workstations and ionized air during die placement
Integrated body diode	V_SD = 1.0–1.2 V at I_F = 1 A - supports synchronous rectification in buck converters without external Schottky

Applications

Industrial Motor Drives

Server DC-DC Converters

Use Scenario: Half-bridge inverter stage for 400 W BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off to minimize shoot-through risk and reduce gate drive complexity.

Use Value: 1.9 mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 3.5 mΩ dies, enabling passive cooling in space-constrained enclosures.

Use Scenario: Synchronous rectifier in 12 V → 1.2 V, 100 A multiphase VRM for AI accelerator cards.

IC Role / Device Role / Timing Role: Power FET in bottom-side position of buck cell; driven by dedicated gate controller with adaptive dead-time control.

Use Value: 220 µm thin die improves thermal coupling to copper-clad PCB, reducing junction-to-board ΔT by 12°C at full load.

Hybrid Power Modules

Renewable Energy Inverters

Use Scenario: Embedded die in custom 650 V/100 A dual-channel half-bridge module for e-mobility traction inverters.

IC Role / Device Role / Timing Role: Bare-die building block co-packaged with SiC gate driver and temperature sensor on ceramic substrate.

Use Value: 6 × 5.2 mm² footprint aligns with standard die attach stencil apertures, enabling automated pick-and-place at >99.95% placement yield.

Use Scenario: High-efficiency boost stage in 5 kW string solar inverter with 1000 V DC input.

IC Role / Device Role / Timing Role: Low-side switch in interleaved boost converter; operated at 50 kHz with 40 ns gate delay tolerance.

Use Value: 45 mJ E_AS rating eliminates need for external avalanche-rated snubber components, reducing BOM count by 3 parts per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET bare-die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB027N10N3 G	Same die design but packaged in P-TO263-3; includes internal gate resistor (RG ≈ 8 Ω); wafer-level R_DS(on) identical	Used in discrete PCB-mount designs; not suitable for direct die attach or hybrid module integration	Select when requiring qualified, tested, and assembled part with JEDEC-compliant leadframe and solderable terminals
IPP313N10N3	Bare die variant with identical V_BRDSS and R_DS(on), but 250 µm thickness and different passivation (oxide + nitride)	Higher thermal resistance due to thicker die; used where mechanical robustness outweighs thermal priority	Select when enhanced mechanical handling durability is required during die attach, especially in high-vibration environments

Compared with IPB027N10N3 G, IPC313N10N3RX1SA2 offers direct thermal path control and layout flexibility for custom modules; compared with IPP313N10N3, it delivers lower junction-to-case resistance due to 220 µm thickness - critical for >50 W/cm² power density designs.

Availability

IPC313N10N3RX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and hybrid power modules requiring stable component supply and wafer-level traceability.

Supply support for IPC313N10N3RX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for industrial, automotive, and renewable energy markets.

This part belongs to the OptiMOSTM3 power MOSFET product line, engineered for high-efficiency, high-power-density switching in next-generation power conversion systems using advanced silicon process and die-level optimization.

FAQ

What is the gate-source leakage current specification for IPC313N10N3RX1SA2?

At V_GS = 20 V and V_DS = 0 V, the gate-source leakage current I_GSS is rated at 1–100 nA (max). This low leakage supports stable gate bias in high-impedance drive circuits and minimizes standby power loss in always-on control stages.

Does IPC313N10N3RX1SA2 include an integrated gate resistor?

No. Unlike the packaged IPB027N10N3 G variant, this bare die has no internal gate resistor. The measured internal gate resistance R_G is 8 Ω (typ.), arising from AlCu metallization geometry - external gate resistors must be added per layout requirements.

Can IPC313N10N3RX1SA2 be used in avalanche-mode operation?

Yes - wafer-level testing confirms single-pulse avalanche energy E_AS = 45 mJ at I_D = 30 A with R_GS = 25 Ω. However, repetitive avalanche is not characterized; system-level stress must remain within this single-pulse limit.

What is the recommended die attach method for IPC313N10N3RX1SA2?

Infineon specifies solder or epoxy die attach. Solder (e.g., SnAgCu) is preferred for high-thermal-conductivity applications; conductive epoxy is acceptable where solder reflow is incompatible with adjacent components or substrates.

IPC313N10N3RX1SA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPC313N10N3RX1SA2 FAQ

1.How can I place an order for IPC313N10N3RX1SA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPC313N10N3RX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPC313N10N3RX1SA2 reliable?

The price and inventory of IPC313N10N3RX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC313N10N3RX1SA2 is usually 5 days.

3.What payment methods are accepted for IPC313N10N3RX1SA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC313N10N3RX1SA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPC313N10N3RX1SA2?

IPC313N10N3RX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPC313N10N3RX1SA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPC313N10N3RX1SA2?

For technical support, including IPC313N10N3RX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC313N10N3RX1SA2 requirements.

6.How does Aetrix verify that IPC313N10N3RX1SA2 is sourced from the original manufacturer or authorized distributors?

All IPC313N10N3RX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC313N10N3RX1SA2 meets industry standards.

7.What is the process for return or replacement of IPC313N10N3RX1SA2?

All IPC313N10N3RX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPC313N10N3RX1SA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPC313N10N3RX1SA2 part is unused and in its original packaging.

Return procedure for IPC313N10N3RX1SA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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