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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT60R102G7E8236XTMA1

Name: IPT60R102G7E8236XTMA1
Brand: Infineon Technologies
SKU: IPT60R102G7E8236XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT60R102G7E8236XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPT60R102G7E8236XTMA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPT60R102G7E8236XTMA1 from Infineon is a 600V superjunction MOSFET in the CoolMOS™ G7 C7 GOLD series, optimized for high-efficiency PFC and LLC topologies up to 3 kW. It features 102 mΩ R_DS(on), 34 nC total gate charge, Kelvin-source 4-pin TOLL package, and 740 A/μs body diode di/dt capability - enabling fast switching with reduced ringing in server and telecom SMPS.

For engineers reviewing the IPT60R102G7E8236XTMA1 datasheet, IPT60R102G7E8236XTMA1 pinout, IPT60R102G7E8236XTMA1 application, or IPT60R102G7E8236XTMA1 equivalent, key selection criteria include its 0.888 °C/W R_thJC, MSL1-compliant SMD TOLL footprint, 66 A pulsed drain current, and validated industrial JEDEC qualification for continuous operation at T_j ≤ 150°C.

Technical Context

This device implements superjunction (SJ) technology with C7 GOLD process optimization, delivering best-in-class figure-of-merit (R_DS(on) × Q_g) - 15% better than prior 600V C7 generation. Its internal Kelvin source configuration reduces parasitic source inductance to ~1 nH, directly improving gate control fidelity during hard-switching transitions.

The TOLL (PG-HSOF-8) package integrates four dedicated source terminals - two for power return and two for driver reference - enabling independent gate loop routing. This architecture suppresses voltage overshoot and simplifies layout in high-di/dt PFC boost stages where body diode commutation speed (740 A/μs) and low E_oss (4 μJ at 400 V) are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for primary-side switch in 400 V DC-link PFC and 380–400 V bus LLC resonant converters
R_DS(on) @ 25°C	0.102 Ω - conduction loss of ~0.6 W at 23 A continuous drain current, enabling compact thermal design
Q_g	34 nC - total gate charge determines driver strength requirement; supports <10 ns turn-on delay with 5 V plateau
E_oss @ 400 V	4 μJ - output capacitance energy loss per switching cycle; enables >100 kHz operation with low capacitive turn-on loss
T_j,max	150 °C - maximum junction temperature validated per JEDEC industrial standards for long-term reliability
R_thJC	0.888 °C/W - thermal resistance from junction to case enables direct heatsink mounting without thermal interface material degradation risk
di/dt (body diode)	740 A/μs - high commutation speed supports zero-voltage switching (ZVS) in asymmetric half-bridge PFC and synchronous rectification

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, MSL1, Pb-free die attach, grooved leads for visual solder inspection. Features integrated Kelvin-source configuration with separate power and driver source paths.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (Top-side metal)	Main power drain connection	Low-inductance, high-current path to PCB copper pour; thermally coupled to heatsink
Pin 1 (Gate)	Control input	Standard MOSFET gate terminal; driven by isolated gate driver referenced to Kelvin source
Pins 3–8 (Source Power)	Power return path	Four parallel source pins carrying full load current; minimize IR drop and improve current sharing
Pin 2 (Kelvin Source)	Driver reference node	Dedicated low-noise source reference for gate driver feedback; isolates gate loop from power loop inductance

Key Features

Feature	Design Value
C7 GOLD superjunction process	Delivers 102 mΩ R_DS(on) in TOLL footprint - 30% smaller area vs. previous 600V D²PAK equivalents at same R_DS(on)
4-pin Kelvin Source topology	Reduces effective source inductance to ~1 nH, eliminating gate oscillation without ferrite beads in most PFC layouts
MSL1 reflow compatibility	Enables standard lead-free reflow assembly without moisture sensitivity concerns or baking requirements
JEDEC industrial qualification	Validated for continuous operation at T_j = 150°C - suitable for unventilated server PSU and telecom rectifier modules
Low E_oss & high di/dt body diode	4 μJ E_oss at 400 V + 740 A/μs di/dt enables soft-switching in high-frequency PFC without external snubbers

Applications

Server PSU PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC stage in 2–3 kW front-end power supply for AI accelerator servers operating at 96–98% efficiency targets.

IC Role / Device Role / Timing Role: Primary-side high-side switch in continuous conduction mode (CCM) boost converter; handles 23 A continuous and 66 A pulsed drain current.

Use Value: Kelvin-source layout eliminates need for gate ferrite beads, reducing BOM count and layout complexity while maintaining <10 ns switching jitter across temperature.

Use Scenario: High-density 48 V telecom rectifier with dual-phase interleaved PFC and downstream LLC conversion.

IC Role / Device Role / Timing Role: Interleaved PFC switch operating at 100–150 kHz with ZVS-assisted turn-on enabled by low E_oss and fast body diode recovery.

Use Value: 0.888 °C/W R_thJC allows direct heatsink mounting on vertical PCB, achieving 3.2 kW/L power density without forced air cooling.

Solar String Inverter DC-DC Stage

Industrial UPS Inverter Bridge

Use Scenario: Isolated DC-DC stage in string inverters converting 1000 V PV input to 400 V DC bus, requiring high-voltage isolation and efficiency.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or phase-shifted full-bridge topology; blocks 600 V with 150°C junction rating.

Use Value: 600 V V_DS rating with 120 V/ns dv/dt ruggedness ensures robustness against voltage transients in ungrounded PV systems.

Use Scenario: Three-phase IGBT/MOSFET hybrid inverter bridge in 10–20 kVA online UPS, where fast switching reduces transformer size.

IC Role / Device Role / Timing Role: Low-side switch in totem-pole PFC or auxiliary LLC resonant controller; leverages 740 A/μs body diode for bidirectional conduction.

Use Value: TOLL package's 35–45 °C/W R_thJA on 40 mm × 40 mm PCB enables 2× higher power density vs. TO-220 in space-constrained rack-mounted designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	99 mΩ R_DS(on), same C7 GOLD process, but TO-247-4 package with separate Kelvin source	Larger footprint and through-hole mounting; higher R_thJC (0.95 °C/W); requires mechanical heatsink attachment	Select when board-level thermal management favors discrete heatsinks over SMD copper pours
STP60N10F6	100 mΩ R_DS(on), 650 V, standard SJ MOSFET in TO-220FP; no Kelvin source; E_oss = 12 μJ	No SMD capability; lower di/dt (350 A/μs); unsuitable for >75 kHz PFC without snubbers	Select only for cost-sensitive, low-frequency (<50 kHz), non-Kelvin-layout legacy designs

Compared with IPW60R099C7 and STP60N10F6, IPT60R102G7E8236XTMA1 uniquely combines SMD manufacturability, sub-1 nH source inductance, and JEDEC-qualified 150°C operation - making it the only choice for high-power, high-density, automated-assembly PFC stages requiring zero-ferrite-bead gate drive.

Availability

IPT60R102G7E8236XTMA1 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, and solar string inverters requiring stable component supply, long-lifecycle support, and MSL1-compliant SMD assembly.

Supply support for IPT60R102G7E8236XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This part belongs to the CoolMOS™ G7 C7 GOLD superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for IPT60R102G7E8236XTMA1 in a 100 kHz PFC application?

The datasheet specifies a typical gate plateau voltage of 5.0 V and total gate charge of 34 nC. For 100 kHz operation with <20 ns rise time, a gate resistor of 5–10 Ω is recommended when paired with a 2 A peak gate driver. Higher values increase switching losses and reduce di/dt control margin, especially under high-temperature conditions where R_DS(on) rises.

Does IPT60R102G7E8236XTMA1 require external gate ferrite beads when used in parallel configurations?

No - the integrated 4-pin Kelvin source reduces parasitic source inductance to ~1 nH, eliminating gate ringing in single-device operation. However, Infineon recommends individual gate ferrite beads or separate totem-pole drivers when paralleling multiple units to ensure balanced dynamic current sharing and prevent oscillatory turn-on.

Can IPT60R102G7E8236XTMA1 be used in hard-switched flyback converters above 200 kHz?

Yes - its 4 μJ E_oss at 400 V and 1320 pF C_iss enable efficient operation up to 250 kHz in discontinuous conduction mode (DCM) flyback. However, thermal limits (141 W P_tot at T_c = 25°C) require careful PCB copper area design; derating to 60–70 W is typical at 200 kHz due to increased switching losses.

Is the TOLL package of IPT60R102G7E8236XTMA1 compatible with standard reflow profiles for lead-free assembly?

Yes - the device is MSL1 rated and qualified for peak reflow temperatures up to 260°C. It supports IPC/JEDEC J-STD-020D.3 profiles with ramp rates ≤3°C/s and dwell time at peak temperature ≤60 seconds. No pre-bake is required, and the grooved leads enable automated optical inspection (AOI) of solder fillets.

IPT60R102G7E8236XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPT60R102G7E8236XTMA1 FAQ

1.How can I place an order for IPT60R102G7E8236XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT60R102G7E8236XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT60R102G7E8236XTMA1 reliable?

The price and inventory of IPT60R102G7E8236XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT60R102G7E8236XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT60R102G7E8236XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT60R102G7E8236XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT60R102G7E8236XTMA1?

IPT60R102G7E8236XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT60R102G7E8236XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT60R102G7E8236XTMA1?

For technical support, including IPT60R102G7E8236XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT60R102G7E8236XTMA1 requirements.

6.How does Aetrix verify that IPT60R102G7E8236XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT60R102G7E8236XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT60R102G7E8236XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT60R102G7E8236XTMA1?

All IPT60R102G7E8236XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT60R102G7E8236XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT60R102G7E8236XTMA1 part is unused and in its original packaging.

Return procedure for IPT60R102G7E8236XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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