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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP82N10PUF-E1-AY

Name: NP82N10PUF-E1-AY
Brand: Renesas
SKU: NP82N10PUF-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP82N10PUF-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: NP82N10PUF-E1-AY.pdf

Description:: NP82N10PUF-E1-AY - MOS FIELD EFF

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Product details

Overview

NP82N10PUF-E1-AY from Renesas Electronics is an AEC-Q101-qualified N-channel power MOSFET in TO-263 (MP-25ZP) package, designed for high-current automotive switching applications. It delivers 82 A DC drain current at 25°C case temperature, 100 V drain-source breakdown voltage, and ultra-low 15 mΩ R_DS(on) at V_GS = 10 V and I_D = 41 A - enabling efficient motor control and DC-DC conversion in engine management systems.

For engineers reviewing the NP82N10PUF-E1-AY datasheet, NP82N10PUF-E1-AY pinout, NP82N10PUF-E1-AY application, or NP82N10PUF-E1-AY equivalent, key selection criteria include avalanche energy rating (117 mJ), gate charge (96 nC max), thermal resistance (1.00 °C/W channel-to-case), and automotive-grade reliability validation per AEC-Q101.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in hard-switched topologies. Its 100 V V_DSS rating supports 48 V and 60 V automotive bus architectures, while the 164 A pulsed drain current enables robust short-circuit handling during transient overloads.

The device integrates a body diode with 1.5 V forward voltage at 82 A and 62 ns reverse recovery time, supporting synchronous rectification and freewheeling in H-bridge motor drivers. Its 2900 pF typical input capacitance and 22 nC gate-to-drain charge (Q_GD) define turn-off behavior under high dV/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands 48 V/60 V automotive system transients up to ISO 7637-2 Pulse 5a without clamping.
R_DS(on) max	15 mΩ @ V_GS = 10 V, I_D = 41 A - Enables <1.5 W conduction loss at 40 A continuous, reducing heatsink requirements.
I_D(DC)	±82 A @ T_C = 25°C - Supports high-power BLDC motor phase legs and solenoid drivers without parallel devices.
E_AS	117 mJ - Sustains single-pulse inductive energy from 50 V bus and 100 µH load without failure.
Q_G max	96 nC - Determines gate driver peak current demand (~2 A for 50 ns rise time) in PWM gate drive circuits.
R_th(ch-C)	1.00 °C/W - Allows 150 W power dissipation with ≤150°C channel temperature when mounted on 10 cm² copper area.
V_GS(th)	1.7–3.3 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level microcontrollers via gate buffer.

Pinout & Package

NP82N10PUF-E1-AY uses the TO-263 (MP-25ZP) surface-mount package with exposed drain tab for thermal and electrical performance. The 4-pin configuration features Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and Fin/Drain (Pin 4) - where Pin 2 and Pin 4 are internally connected to the same drain metallization and must be soldered to a common thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ≤±20 V gate drive; 100 nA leakage ensures stable off-state with high-impedance MCU outputs.
Pin 2	Drain	Main high-side current path; electrically and thermally tied to metal tab - must connect to PCB ground plane or heatsink.
Pin 3	Source	Reference node for gate drive; connects to low-side switch or current sense resistor in half-bridge configurations.
Pin 4	Fin (Drain)	Secondary drain connection reinforcing thermal path; must be soldered to same copper area as Pin 2 for full R_th(ch-C) benefit.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood environments including temperature cycling, humidity bias, and mechanical shock per JESD22 standards.
Ultra-low R_DS(on)	15 mΩ max at 10 V gate drive reduces I²R losses by >30% vs. legacy 20 mΩ MOSFETs in 48 V traction inverters.
High avalanche energy	117 mJ single-pulse rating enables operation without external snubbers in inductive load switching (e.g., fuel injectors).
Low C_iss / C_rss ratio	2900 pF C_iss and 140 pF C_rss yield Miller plateau ratio <0.05 - minimizing shoot-through risk in high-frequency bridge designs.
Body diode with fast recovery	62 ns t_rr and 135 nC Q_rr support efficient freewheeling in 20–100 kHz motor drives without external Schottky assist.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid Starter-Generator Inverter
Use Scenario: High-speed switching of 12–24 V, 10–20 A fuel injectors in gasoline direct injection systems with strict EMI limits. IC Role / Device Role / Timing Role: Low-side switching element controlling injector coil current; operates at 1–10 Hz pulse frequencies with <100 ns turn-off for precise fuel metering. Use Value: 15 mΩ R_DS(on) minimizes coil heating during dwell time; 117 mJ E_AS absorbs inductive kickback without clamping diodes.	Use Scenario: Phase-leg switching in bi-directional 48 V/12 V DC-DC converters and starter-generator inverters for 48 V mild hybrid vehicles. IC Role / Device Role / Timing Role: High-current N-channel switch in three-phase inverter leg; handles 82 A continuous and 164 A pulsed currents at 10–20 kHz PWM. Use Value: 1.00 °C/W R_th(ch-C) enables compact heatsinking; AEC-Q101 qualification ensures 15-year field reliability under thermal cycling.
Electric Power Steering (EPS) Motor Driver	Commercial Vehicle HVAC Blower Controller
Use Scenario: Three-phase BLDC motor control in EPS systems requiring >100 A peak current and functional safety compliance (ASIL-B). IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated current sensing via source degeneration; supports 10–50 kHz PWM with <120 ns t_d(off). Use Value: 60 S \|y_fs\| ensures strong transconductance for stable gate control; 100 V V_DSS withstands load-dump transients up to 87 V.	Use Scenario: Variable-speed blower motor control in Class 8 truck HVAC systems operating continuously at ambient up to 105°C. IC Role / Device Role / Timing Role: High-efficiency switching element in buck-derived motor controller; conducts 60 A DC with forced-air cooling. Use Value: TO-263 package with dual drain pins achieves 150 W power dissipation; -55°C to +175°C T_stg/T_ch range supports extended temperature operation.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid Starter-Generator Inverter

Use Scenario: High-speed switching of 12–24 V, 10–20 A fuel injectors in gasoline direct injection systems with strict EMI limits.

IC Role / Device Role / Timing Role: Low-side switching element controlling injector coil current; operates at 1–10 Hz pulse frequencies with <100 ns turn-off for precise fuel metering.

Use Value: 15 mΩ R_DS(on) minimizes coil heating during dwell time; 117 mJ E_AS absorbs inductive kickback without clamping diodes.

Use Scenario: Phase-leg switching in bi-directional 48 V/12 V DC-DC converters and starter-generator inverters for 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current N-channel switch in three-phase inverter leg; handles 82 A continuous and 164 A pulsed currents at 10–20 kHz PWM.

Use Value: 1.00 °C/W R_th(ch-C) enables compact heatsinking; AEC-Q101 qualification ensures 15-year field reliability under thermal cycling.

Electric Power Steering (EPS) Motor Driver

Commercial Vehicle HVAC Blower Controller

Use Scenario: Three-phase BLDC motor control in EPS systems requiring >100 A peak current and functional safety compliance (ASIL-B).

IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated current sensing via source degeneration; supports 10–50 kHz PWM with <120 ns t_d(off).

Use Value: 60 S |y_fs| ensures strong transconductance for stable gate control; 100 V V_DSS withstands load-dump transients up to 87 V.

Use Scenario: Variable-speed blower motor control in Class 8 truck HVAC systems operating continuously at ambient up to 105°C.

IC Role / Device Role / Timing Role: High-efficiency switching element in buck-derived motor controller; conducts 60 A DC with forced-air cooling.

Use Value: TO-263 package with dual drain pins achieves 150 W power dissipation; -55°C to +175°C T_stg/T_ch range supports extended temperature operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH82N10L2	Higher R_DS(on) (18 mΩ), lower Q_G (75 nC), same 100 V rating and TO-263 package.	Better suited for higher-frequency switching (>100 kHz) due to lower gate charge, but higher conduction loss at >30 A.	Select when switching loss dominates over conduction loss; verify thermal margin with 1.25 °C/W R_th(ch-C).
STL220N10F7	100 V, 220 A rated, 3.5 mΩ R_DS(on), DFN8 8x8 mm package - no leadframe, different footprint and thermal interface.	Enables higher power density but requires requalification of PCB layout and thermal interface; not drop-in compatible.	Choose only for new designs targeting >150 A systems; avoid for NP82N10PUF-E1-AY replacement without board redesign.

Compared with IXTH82N10L2 and STL220N10F7, NP82N10PUF-E1-AY offers optimal balance of conduction efficiency (15 mΩ), ruggedness (117 mJ E_AS), and automotive qualification - making it preferred for cost-sensitive, thermally constrained 48–60 V automotive power stages where pin-compatible replacement is required.

Availability

NP82N10PUF-E1-AY is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid inverters, electric power steering systems, and commercial vehicle HVAC controllers requiring stable component supply across long production lifecycles.

Supply support for NP82N10PUF-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The NP82N10PUF-E1-AY belongs to Renesas' automotive-qualified power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine management, chassis, and electrification systems.

FAQ

What is the maximum continuous drain current rating for NP82N10PUF-E1-AY at 100°C case temperature?

At T_C = 100°C, the NP82N10PUF-E1-AY supports 52 A DC drain current, derated from its 82 A rating at 25°C using the published derating curve (1.00 °C/W R_th(ch-C)). This value is confirmed in the Absolute Maximum Ratings table and validated by the Forward Bias Safe Operating Area graph on page 4 of the R07DS0444EJ0100 datasheet. Designers must ensure heatsink design maintains T_C ≤ 100°C for sustained 52 A operation.

Is NP82N10PUF-E1-AY pin-compatible with other TO-263 N-channel MOSFETs like the IRF3205?

No, NP82N10PUF-E1-AY is not pin-compatible with IRF3205. While both use TO-263 packages, the NP82N10PUF-E1-AY has a 4-pin configuration (Gate, Drain, Source, Fin/Drain), whereas IRF3205 uses a standard 3-pin TO-263 layout. The fourth pin (Fin) on NP82N10PUF-E1-AY is electrically and thermally tied to the drain and must be soldered to the same PCB copper area - requiring specific land pattern design not used for 3-pin variants.

Does NP82N10PUF-E1-AY support 5 V gate drive in automotive microcontroller applications?

Yes, NP82N10PUF-E1-AY supports 5 V gate drive: its gate threshold voltage V_GS(th) is specified from 1.7 V to 3.3 V, and R_DS(on) is characterized at V_GS = 5.8 V (22 mΩ max). At 5 V, the device delivers usable on-resistance (~25 mΩ estimated from R_DS(on) vs. V_GS curves on page 5), making it suitable for direct drive from 5 V MCUs - though 10 V drive is recommended for minimal conduction loss in high-current applications.

What is the body diode forward voltage specification for NP82N10PUF-E1-AY under rated current?

The body diode forward voltage VF(S-D) for NP82N10PUF-E1-AY is 0.95 V typical and 1.5 V maximum at I_F = 82 A and V_GS = 0 V, as specified in the Electrical Characteristics table on page 3. This low forward drop supports efficient freewheeling in half-bridge and synchronous rectifier topologies, reducing power loss compared to external diodes in high-duty-cycle applications.

How does the avalanche capability of NP82N10PUF-E1-AY impact circuit protection design?

The NP82N10PUF-E1-AY's 117 mJ single-pulse avalanche energy rating allows it to safely absorb inductive energy from loads like fuel injectors or solenoids without external clamping components - provided test conditions match the datasheet (V_DD = 50 V, L = 100 µH, I_AS = 34 A). This simplifies protection design in automotive valve drivers but does not eliminate need for proper layout, gate drive strength, and thermal management during repeated avalanche events.

NP82N10PUF-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5.8V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 41A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 150W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-3

NP82N10PUF-E1-AY FAQ

1.How can I place an order for NP82N10PUF-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP82N10PUF-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP82N10PUF-E1-AY reliable?

The price and inventory of NP82N10PUF-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP82N10PUF-E1-AY is usually 5 days.

3.What payment methods are accepted for NP82N10PUF-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP82N10PUF-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP82N10PUF-E1-AY?

NP82N10PUF-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP82N10PUF-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP82N10PUF-E1-AY?

For technical support, including NP82N10PUF-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP82N10PUF-E1-AY requirements.

6.How does Aetrix verify that NP82N10PUF-E1-AY is sourced from the original manufacturer or authorized distributors?

All NP82N10PUF-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP82N10PUF-E1-AY meets industry standards.

7.What is the process for return or replacement of NP82N10PUF-E1-AY?

All NP82N10PUF-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP82N10PUF-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP82N10PUF-E1-AY part is unused and in its original packaging.

Return procedure for NP82N10PUF-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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