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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA21N50C3XKSA1

Name: SPA21N50C3XKSA1
Brand: Infineon Technologies
SKU: SPA21N50C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPA21N50C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SPA21N50C3XKSA1.pdf

Description:: HIGH POWER_LEGACY

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPA21N50C3 from Infineon Technologies is a 500 V, 21 A N-channel CoolMOS™ C3 superjunction power MOSFET in PG-TO220FP package, featuring R_DS(on) = 0.19 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 95 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters.

For engineers reviewing the SPA21N50C3 datasheet, SPA21N50C3 pinout, SPA21N50C3 application, or SPA21N50C3 equivalent, key selection criteria include its 500 V V_(BR)DSS, 0.19 Ω R_DS(on), 95 nC total gate charge, 50 V/ns dv/dt capability, and TO-220FP thermal performance with R_thJC = 0.6 K/W.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, optimized for hard-switched and resonant topologies requiring low conduction and switching losses. Its enhanced transconductance (g_fs typ. 18 S) and reduced output capacitance (C_oss typ. 1200 pF) improve efficiency in 65–300 kHz flyback and LLC converters.

The MOSFET integrates a fast, soft-recovery body diode (t_rr = 450 ns, Q_rr = 9 µC) and supports repetitive avalanche operation up to I_AR = 21 A, enabling robustness in overvoltage transients without external snubbers in well-designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands 400 V DC-link voltage with 25% margin in universal-input offline converters
R_DS(on)	0.19 Ω @ T_j = 25°C - Enables <2.5 W conduction loss at 13.1 A continuous drain current
Q_g	95 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers
E_AS	690 mJ - Supports single-pulse avalanche energy handling during startup or overload
dv/dt Rating	50 V/ns - Ensures reliable operation in high-di/dt environments without spurious turn-on
R_thJC	0.6 K/W - Allows >200 W power dissipation with modest heatsinking at T_C = 100°C
t_rr	450 ns - Limits reverse recovery loss and EMI generation in bridge configurations

Pinout & Package

SPA21N50C3 uses the PG-TO220FP (FullPAK) package: isolated drain tab, surface-mount compatible with through-hole footprint, 3-pin configuration, and integrated thermal pad for direct PCB copper cooling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to power ground or source node; carries full load current and gate return path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven by dedicated gate driver IC
Pin 3 (Drain)	Power output / high-voltage node	Internally connected to metal tab; must be soldered to large copper pour for thermal and electrical integrity

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 95 nC reduces switching losses and simplifies gate driver selection
Periodic avalanche rated	I_AR = 21 A enables reliable operation under transient overvoltage without derating
Extreme dv/dt immunity	50 V/ns rating prevents false turn-on in high-speed half-bridge or LLC resonant circuits
Low effective output capacitance	C_o(er) = 87 pF improves light-load efficiency in ZVS/ZCS topologies
Soft-recovery body diode	t_rr = 450 ns, Q_rr = 9 µC minimizes reverse recovery spikes and EMI

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with universal AC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in active clamp flyback or LLC resonant converter.

Use Value: 0.19 Ω R_DS(on) and 95 nC Q_g reduce conduction + switching losses, enabling >94% efficiency at full load.

Use Scenario: 3.3 kW industrial boost PFC stage with 400 V DC output and 50 kHz switching.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 21 A RMS current with minimal thermal rise.

Use Value: R_thJC = 0.6 K/W and 50 V/ns dv/dt rating allow stable operation without snubber networks.

EV Onboard Charger HV Stage

Telecom Rectifier Module

Use Scenario: Bidirectional OBC architecture converting AC grid to 400 V battery pack with regenerative capability.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC with zero-voltage switching.

Use Value: Soft-recovery body diode (t_rr = 450 ns) enables efficient reverse conduction during regeneration phase.

Use Scenario: 48 V telecom rectifier module with 3 kW output and forced-air cooling.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology operating at 100 kHz.

Use Value: 690 mJ E_AS and 21 A I_AR provide margin against line surges and short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N50F3	R_DS(on) = 0.22 Ω, Q_g = 85 nC, TO-220 package, no FullPAK thermal pad	Lacks integrated thermal pad; requires external heatsink mounting	Preferred where board-level thermal management is less constrained and cost sensitivity is higher
IPP60R099C7	R_DS(on) = 0.099 Ω, Q_g = 110 nC, 650 V rating, TO-220FP	Higher voltage rating and lower R_DS(on), but increased gate drive demand	Selected when 650 V margin is required or conduction loss dominates system efficiency

Compared with STP22N50F3 and IPP60R099C7, SPA21N50C3 delivers optimal balance of 500 V rating, 0.19 Ω on-resistance, and 95 nC gate charge in a thermally enhanced FullPAK package-making it ideal for space-constrained, high-efficiency offline SMPS where thermal resistance and dv/dt immunity are critical.

Availability

SPA21N50C3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, EV onboard chargers, and telecom rectifiers requiring stable component supply and long-term manufacturability.

Supply support for SPA21N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ C3 product line targets high-efficiency, high-power-density AC-DC and DC-DC conversion systems, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for SPA21N50C3 at 100°C case temperature?

The maximum continuous drain current is 13.1 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case thermal resistance (R_thJC = 0.6 K/W) and ensures safe operation within the 150°C maximum junction temperature limit.

Does SPA21N50C3 require a gate resistor for EMI suppression?

A gate resistor (typically 3.6 Ω, per datasheet test conditions) is recommended to dampen ringing and control dV/dt during switching transitions. While not strictly mandatory, omitting it risks overshoot, shoot-through in half-bridges, and increased radiated emissions-especially in high-di/dt applications like LLC resonant converters.

Can SPA21N50C3 replace older CoolMOS™ C2 devices in existing designs?

Yes-SPA21N50C3 is a direct drop-in replacement for C2-series equivalents (e.g., SPA21N50C2) with identical pinout, package, and voltage rating. It offers improved R_DS(on) (0.19 Ω vs. 0.22 Ω), lower Q_g, and enhanced dv/dt immunity, enabling efficiency gains without layout changes.

Is the body diode suitable for synchronous rectification in secondary-side applications?

No-the body diode is optimized for clamping and freewheeling, not synchronous rectification. Its forward voltage (V_SD = 1.0–1.2 V) and reverse recovery characteristics (t_rr = 450 ns) are not competitive with discrete Schottky or GaN FETs used in SR. It should not be relied upon for high-frequency, low-loss secondary-side conduction.

SPA21N50C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 34.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

SPA21N50C3XKSA1 FAQ

1.How can I place an order for SPA21N50C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA21N50C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA21N50C3XKSA1 reliable?

The price and inventory of SPA21N50C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA21N50C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPA21N50C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA21N50C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA21N50C3XKSA1?

SPA21N50C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA21N50C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA21N50C3XKSA1?

For technical support, including SPA21N50C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA21N50C3XKSA1 requirements.

6.How does Aetrix verify that SPA21N50C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPA21N50C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA21N50C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPA21N50C3XKSA1?

All SPA21N50C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPA21N50C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA21N50C3XKSA1 part is unused and in its original packaging.

Return procedure for SPA21N50C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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