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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas NP88N04NUG-S18-AY

Name: NP88N04NUG-S18-AY
Brand: Renesas
SKU: NP88N04NUG-S18-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NP88N04NUG-S18-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: NP88N04NUG-S18-AY.pdf

Description:: NP88N04NUG-S18-AY - MOS FIELD EF

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Product details

Overview

NP88N04NUG-S18-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching and motor drive half-bridge legs. It delivers 88 A continuous drain current at TC = 25°C, features 3.4 mΩ max R_DS(on) at V_GS = 10 V and ID = 44 A, supports 40 V V_DSS, and operates up to 175°C channel temperature - enabling compact, high-efficiency industrial power supplies.

For engineers reviewing the NP88N04NUG-S18-AY datasheet, NP88N04NUG-S18-AY pinout, NP88N04NUG-S18-AY application, or NP88N04NUG-S18-AY equivalent, key selection criteria include its low conduction loss (R_DS(on) ≤ 3.4 mΩ), robust avalanche rating (E_AR = 314 mJ), TO-262 package thermal performance (R_th(ch-C) = 0.75°C/W), and gate charge profile (Q_G = 171–250 nC) for optimized PWM switching efficiency.

Technical Context

This MOSFET uses a planar silicon process with optimized cell pitch and trench-assisted drift region to achieve ultra-low on-resistance while maintaining rugged unclamped inductive switching (UIS) capability. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers and stable operation across −55°C to +175°C channel temperature range.

The device integrates a fast-recovery body diode (t_rr = 51 ns, Q_rr = 67 nC) with low forward voltage (V_F(S-D) = 0.94–1.5 V at I_F = 88 A), supporting synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Supports 36 V nominal input rails with 10% margin for transient spikes in industrial DC systems.
R_DS(on) max	3.4 mΩ at V_GS = 10 V, I_D = 44 A - Enables <1.5 W conduction loss at 44 A, reducing heatsink requirements.
I_D(DC)	±88 A at T_C = 25°C - Sustains full-load current in high-power motor inverters and server VRMs.
Q_G	171–250 nC - Dictates gate driver peak current demand (~2.5 A for 100 ns rise time) in 100–500 kHz SMPS designs.
E_AR	314 mJ at T_ch ≤ 150°C - Withstands repetitive inductive energy dumps in solenoid drivers and H-bridge regenerative braking.
t_r/t_f	104–260 ns / 22–60 ns - Enables fast switching with controlled EMI in noise-sensitive factory automation equipment.
R_th(ch-C)	0.75°C/W - Allows direct mounting to cold plates for >150 W dissipation without forced air cooling.

Pinout & Package

NP88N04NUG-S18-AY is housed in a TO-262 (I²PAK) package with isolated metal tab (Drain-connected fin), offering low-inductance, high-current routing and direct thermal path to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level signal; requires ≥2.5 A peak gate drive due to 250 nC Q_G for sub-100 ns switching.
2 (Drain)	High-side power terminal	Connected to internal fin; electrically tied to case - must be insulated from heatsink unless system ground reference permits.
3 (Source)	Power return and reference	Serves as local ground for gate driver; low-inductance layout critical to suppress V_GS ringing during dV/dt transients.
4 (Fin/Drain)	Thermal & electrical Drain extension	Provides mechanical mounting surface and primary heat conduction path; electrically identical to Pin 2.

Key Features

Feature	Design Value
175°C channel rating	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial drives) without derating.
Low C_iss (9510 pF typ.)	Reduces Miller effect, improving gate drive efficiency and enabling higher-frequency operation with lower driver losses.
Body diode t_rr = 51 ns	Minimizes reverse recovery loss and associated voltage overshoot in non-synchronous buck converters and flyback snubbers.
Rugged UIS capability	Supports unclamped inductive switching in relay drivers and solenoid controls without external clamping components.
TO-262 thermal resistance	0.75°C/W channel-to-case enables >150 W continuous power dissipation with passive heatsinking in space-constrained designs.

Applications

Industrial Motor Drives	Server VRM Power Stages
Use Scenario: Half-bridge leg in 3 kW servo amplifier driving 400 V AC induction motors. IC Role / Device Role / Timing Role: High-side N-channel switch handling 80 A peak phase current with 100 kHz PWM. Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 5 mΩ MOSFETs, lowering thermal stress on gate drivers and current sensors.	Use Scenario: Primary-side switch in multiphase buck converter supplying 50 A @ 1.2 V to AI accelerator cards. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-frequency (400 kHz) power stage with tight duty-cycle control. Use Value: Fast body diode (t_rr = 51 ns) eliminates need for external Schottky, simplifying BOM and reducing PCB area by 12 mm² per phase.
DC-DC Telecom Converters	EV Onboard Charger Stages
Use Scenario: Primary switch in 3.3 kW isolated LLC resonant converter for 48 V telecom rack power. IC Role / Device Role / Timing Role: Hard-switched 40 V primary FET operating at 200 kHz with 300 V bus transients. Use Value: 40 V V_DSS with 314 mJ avalanche energy withstands 350 V line surges without failure, eliminating TVS clamping cost.	Use Scenario: Boost PFC stage in 6.6 kW single-phase EV onboard charger. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) switch handling 35 A RMS input current at 65 kHz. Use Value: 88 A I_D(DC) rating allows 2× design margin over peak line-current, ensuring 15-year field reliability under thermal cycling.

Industrial Motor Drives

Server VRM Power Stages

Use Scenario: Half-bridge leg in 3 kW servo amplifier driving 400 V AC induction motors.

IC Role / Device Role / Timing Role: High-side N-channel switch handling 80 A peak phase current with 100 kHz PWM.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 5 mΩ MOSFETs, lowering thermal stress on gate drivers and current sensors.

Use Scenario: Primary-side switch in multiphase buck converter supplying 50 A @ 1.2 V to AI accelerator cards.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-frequency (400 kHz) power stage with tight duty-cycle control.

Use Value: Fast body diode (t_rr = 51 ns) eliminates need for external Schottky, simplifying BOM and reducing PCB area by 12 mm² per phase.

DC-DC Telecom Converters

EV Onboard Charger Stages

Use Scenario: Primary switch in 3.3 kW isolated LLC resonant converter for 48 V telecom rack power.

IC Role / Device Role / Timing Role: Hard-switched 40 V primary FET operating at 200 kHz with 300 V bus transients.

Use Value: 40 V V_DSS with 314 mJ avalanche energy withstands 350 V line surges without failure, eliminating TVS clamping cost.

Use Scenario: Boost PFC stage in 6.6 kW single-phase EV onboard charger.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) switch handling 35 A RMS input current at 65 kHz.

Use Value: 88 A I_D(DC) rating allows 2× design margin over peak line-current, ensuring 15-year field reliability under thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH88N40P	Higher R_DS(on) (4.2 mΩ), same V_DSS (40 V), TO-247 package	Larger footprint, higher R_th(j-c) (0.9°C/W), less suitable for ultra-compact layouts	Choose when higher avalanche margin (E_AS = 520 mJ) is prioritized over thermal density.
STP88NF55	Same R_DS(on) (3.3 mΩ), higher V_DSS (55 V), TO-220FP package	Lower current rating (80 A), no exposed fin - limits heatsinking to 100 W max	Choose for legacy TO-220 board compatibility where 55 V headroom justifies 12% conduction loss increase.

Compared with IXFH88N40P and STP88NF55, NP88N04NUG-S18-AY offers superior thermal density (0.75°C/W vs. ≥0.9°C/W) and lowest R_DS(on) in TO-262, making it optimal for space-constrained, high-efficiency industrial power stages requiring >150 W dissipation.

Availability

NP88N04NUG-S18-AY is available at Aetrix Electronics and suitable for industrial motor drives, server VRM power stages, and DC-DC telecom converters requiring stable component supply and long-term lifecycle support.

Supply support for NP88N04NUG-S18-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

NP88N04NUG-S18-AY belongs to Renesas' high-current discrete power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for NP88N04NUG-S18-AY?

The NP88N04NUG-S18-AY is rated for ±88 A continuous drain current at case temperature T_C = 25°C. This rating assumes proper heatsinking with R_th(ch-C) = 0.75°C/W. At elevated case temperatures, current must be derated per the datasheet's "Total Power Dissipation vs. Case Temperature" curve - e.g., ~55 A at T_C = 100°C. The NP88N04NUG-S18-AY maintains safe operation up to 175°C channel temperature.

Does NP88N04NUG-S18-AY have a built-in body diode, and what are its key parameters?

Yes, the NP88N04NUG-S18-AY integrates a fast-recovery body diode rated for 88 A forward current. Key parameters include forward voltage V_F(S-D) = 0.94–1.5 V at I_F = 88 A and V_GS = 0 V, reverse recovery time t_rr = 51 ns, and reverse recovery charge Q_rr = 67 nC (di/dt = 100 A/μs). These values enable efficient freewheeling in hard-switched topologies without external diodes. The NP88N04NUG-S18-AY body diode is optimized for low loss and minimal voltage overshoot.

What gate drive voltage is required to fully enhance NP88N04NUG-S18-AY?

The NP88N04NUG-S18-AY achieves its specified R_DS(on) ≤ 3.4 mΩ at V_GS = 10 V, with gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V. A minimum of 10 V gate drive is recommended for full enhancement and low conduction loss. Driving below 8 V increases R_DS(on) significantly (e.g., ~6 mΩ at V_GS = 8 V), raising power dissipation. The NP88N04NUG-S18-AY supports gate voltages up to ±20 V, but exceeding 15 V provides diminishing returns.

Is NP88N04NUG-S18-AY suitable for avalanche-rated applications?

Yes, the NP88N04NUG-S18-AY is characterized for repetitive avalanche operation with I_AR = 56 A and E_AR = 314 mJ (T_ch ≤ 150°C, V_DD = 20 V, R_G = 25 Ω). This makes it suitable for inductive load switching (e.g., solenoids, relays) and fault-tolerant power stages where unclamped inductive energy must be absorbed. The NP88N04NUG-S18-AY avalanche rating is validated per JEDEC JESD24-1, and operation within these limits does not degrade long-term reliability.

What is the thermal resistance from channel to case for NP88N04NUG-S18-AY?

The channel-to-case thermal resistance (R_th(ch-C)) of the NP88N04NUG-S18-AY is 0.75°C/W, measured under JEDEC JESD51-14 conditions. This low value results from the TO-262 package's exposed metal fin (Pin 4), which serves as both Drain connection and primary thermal path. When mounted to a heatsink with thermal interface material, this enables >150 W continuous power dissipation at T_C = 25°C. The NP88N04NUG-S18-AY thermal performance exceeds that of TO-220 and TO-247 variants in the same current class.

NP88N04NUG-S18-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 88A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 200W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

NP88N04NUG-S18-AY FAQ

1.How can I place an order for NP88N04NUG-S18-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for NP88N04NUG-S18-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NP88N04NUG-S18-AY reliable?

The price and inventory of NP88N04NUG-S18-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP88N04NUG-S18-AY is usually 5 days.

3.What payment methods are accepted for NP88N04NUG-S18-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP88N04NUG-S18-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NP88N04NUG-S18-AY?

NP88N04NUG-S18-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NP88N04NUG-S18-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NP88N04NUG-S18-AY?

For technical support, including NP88N04NUG-S18-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP88N04NUG-S18-AY requirements.

6.How does Aetrix verify that NP88N04NUG-S18-AY is sourced from the original manufacturer or authorized distributors?

All NP88N04NUG-S18-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP88N04NUG-S18-AY meets industry standards.

7.What is the process for return or replacement of NP88N04NUG-S18-AY?

All NP88N04NUG-S18-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP88N04NUG-S18-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NP88N04NUG-S18-AY part is unused and in its original packaging.

Return procedure for NP88N04NUG-S18-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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