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Renesas 2SK3435-AZ
- Part No.:
- 2SK3435-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
2SK3435-AZ.pdf
- Description:
- 2SK3435-AZ - SWITCHING N-CHANNEL
- Quantity:
- Payment:
- Shipping:
Inventory:1,213
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Product details
Overview
2SK3435-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive inverters. It delivers RDS(on)1 = 14 mΩ max at VGS = 10 V / ID = 40 A, supports ±80 A DC drain current, and features built-in gate protection diode and 31 A single avalanche capability. Its TO-220AB package enables robust thermal management in 48 V bus systems.
For engineers reviewing the 2SK3435-AZ datasheet, 2SK3435-AZ pinout, 2SK3435-AZ application, or 2SK3435-AZ equivalent, key selection criteria include low RDS(on) at 4.0 V gate drive (22 mΩ max), 3200 pF typical input capacitance, body diode reverse recovery time of 46 ns, and avalanche energy rating of 96 mJ - all critical for hard-switched SMPS and H-bridge designs.
Technical Context
This device operates as a unidirectional, enhancement-mode N-channel power switch with gate threshold voltage VGS(off) between 1.5 V and 2.5 V. Its forward transfer admittance |yfs| ranges from 21 S to 43 S at VDS = 10 V and ID = 40 A, confirming high transconductance for fast turn-on under moderate gate drive.
The integrated gate protection diode guards against ESD but does not replace external clamping for transient overvoltage. Avalanche testing per Note 2 (VDD = 30 V, RG = 25 Ω, Tch = 25°C) validates ruggedness for inductive load switching without snubbers in constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage compatible with 48 V nominal bus systems with 20 % margin. |
| RDS(on)1 | 14 mΩ max at VGS = 10 V / ID = 40 A - Enables <1.1 W conduction loss at 40 A, reducing heatsink requirements. |
| ID(DC) | ±80 A at TC = 25°C - Supports high-current half-bridge legs in motor controllers up to 3 kW continuous output. |
| Ciss | 3200 pF typ. - Low input capacitance allows efficient 10–20 V gate driving with standard MOSFET drivers like IR2110. |
| EAS | 96 mJ - Specifies single-pulse avalanche energy handling without failure, enabling reliable operation in flyback and LLC resonant converters. |
| VF(S-D) | 1.0 V at IF = 80 A - Body diode forward voltage impacts synchronous rectification efficiency and dead-time design. |
| trr | 46 ns - Fast reverse recovery minimizes shoot-through risk and reduces switching losses in bridge configurations. |
Pinout & Package
2SK3435-AZ uses the TO-220AB (MP-25) package with isolated metal tab (Drain-connected fin) and through-hole mounting. Thermal resistance from channel to case is 1.49°C/W, enabling direct heatsink attachment without insulating pads when Drain is at system ground potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≤±20 V rating and external series resistor (e.g., 10–25 Ω) to damp ringing and limit peak current. |
| 2 (Drain) | High-side power terminal | Connected to power rail or inductive load; electrically tied to metal tab - must be isolated from heatsink unless referenced to system ground. |
| 3 (Source) | Power return/reference node | Serves as local ground reference for gate drive; source inductance directly impacts switching speed and dV/dt immunity. |
| 4 (Fin/Drain) | Thermal & electrical connection | Exposed metal tab is internally connected to Drain; provides primary heat path to heatsink - no electrical isolation required if Drain is grounded. |
Key Features
| Feature | Design Value |
|---|---|
| Super low on-state resistance | RDS(on)1 = 14 mΩ max enables <1.1 W conduction loss at 40 A, reducing thermal stress in compact power stages. |
| Built-in gate protection diode | ESD-rated diode between Gate and Source provides Class 2 HBM protection - external TVS still required for system-level surge immunity. |
| Low input capacitance | Ciss = 3200 pF typ. lowers gate drive power demand and improves switching speed consistency across temperature. |
| Rugged avalanche capability | IAS = 31 A / EAS = 96 mJ validated per JEDEC JESD24-11 - eliminates need for external avalanche clamps in well-bounded inductive loads. |
| Fast body diode recovery | trr = 46 ns and Qrr = 66 nC minimize commutation losses and reduce cross-conduction risk in synchronous rectifiers. |
Applications
| Industrial Motor Drives | DC-DC Power Supplies |
|---|---|
|
Use Scenario: Half-bridge output stage in 3 kW BLDC motor controller operating from 48 V battery bus. IC Role / Device Role / Timing Role: High-side and low-side switching element controlling phase current direction and magnitude via PWM. Use Value: 14 mΩ RDS(on) limits conduction loss to <1.1 W per device at 40 A, enabling air-cooled design without forced ventilation. |
Use Scenario: Primary-side switch in 600 W isolated forward converter for telecom power shelf. IC Role / Device Role / Timing Role: Main power switch modulating energy transfer during 100–500 kHz PWM cycles. Use Value: 96 mJ avalanche energy rating permits safe operation during output short-circuit events without snubber network redesign. |
| Uninterruptible Power Systems | Electric Vehicle Onboard Chargers |
|
Use Scenario: Bidirectional DC link switch in UPS inverter stage converting 380 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Hard-switched power transistor handling 50 A peak currents during line-frequency inversion. Use Value: 46 ns body diode reverse recovery time ensures clean commutation with minimal voltage overshoot during zero-crossing transitions. |
Use Scenario: Secondary-side synchronous rectifier in 3.3 kW OBC LLC resonant converter. IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode to improve efficiency at 10–20 A load currents. Use Value: 1.0 V body diode forward voltage and 66 nC Qrr allow >2 % efficiency gain over 45 V Schottky at 100 kHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF55-08 | RDS(on) = 8.5 mΩ @ 10 V, higher Ciss (4700 pF), TO-220FP package with insulated tab. | Better conduction loss but slower switching; suited for lower-frequency (<100 kHz) applications where thermal margin exceeds 2SK3435-AZ. | Select when prioritizing lowest possible RDS(on) over switching speed and gate drive simplicity. |
| IRF1405 | RDS(on) = 5.3 mΩ @ 10 V, no specified avalanche rating, Ciss = 2700 pF, TO-220AB package. | Lacks documented EAS rating; requires external avalanche protection in inductive switching; better for pure DC switching. | Choose only in non-inductive or clamped inductive loads where avalanche robustness is not required. |
Compared with STP80NF55-08 and IRF1405, the 2SK3435-AZ offers balanced trade-offs: verified 96 mJ avalanche capability for reliability in unclamped inductive circuits, moderate RDS(on) for thermal manageability, and gate drive compatibility with standard 10–15 V logic-level drivers - making it optimal for cost-sensitive industrial inverters requiring field-proven ruggedness.
Availability
2SK3435-AZ is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, uninterruptible power systems, and electric vehicle onboard chargers requiring stable component supply and long-term production continuity.
Supply support for 2SK3435-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The 2SK3435-AZ belongs to Renesas' legacy power MOSFET product line engineered for high-current, high-reliability switching in industrial power conversion - emphasizing ruggedness, repeatable avalanche performance, and thermal stability over ultra-low RDS(on).
FAQ
What is the maximum continuous drain current rating for the 2SK3435-AZ at 100°C case temperature?
The 2SK3435-AZ has a DC drain current rating of ±80 A at TC = 25°C, derating linearly to approximately ±40 A at TC = 100°C based on its 1.49°C/W channel-to-case thermal resistance and 150°C maximum channel temperature. This derating curve is confirmed in Figure 3 of the D14604EJ3V0DS datasheet.
Does the 2SK3435-AZ have a specified avalanche energy rating, and how is it tested?
Yes, the 2SK3435-AZ specifies single-pulse avalanche energy EAS = 96 mJ and single-pulse avalanche current IAS = 31 A. Testing follows JEDEC JESD24-11 conditions: VDD = 30 V, RG = 25 Ω, VGS stepped from 20 V to 0 V, starting channel temperature of 25°C - as detailed in Note 2 of the Absolute Maximum Ratings table.
Can the 2SK3435-AZ be used with 5 V gate drive in logic-level applications?
No - the 2SK3435-AZ is not a logic-level MOSFET. Its RDS(on)2 is specified at VGS = 4.0 V (22 mΩ max), but gate threshold voltage VGS(off) ranges from 1.5 V to 2.5 V, and full enhancement requires ≥10 V for rated RDS(on)1. For 5 V drive, conduction losses increase significantly; a dedicated logic-level MOSFET such as RFP30N06LE is recommended instead of the 2SK3435-AZ.
Is the metal tab on the 2SK3435-AZ electrically isolated from the leads?
No - the metal tab (Pin 4, Fin/Drain) is internally connected to the Drain terminal (Pin 2). In the TO-220AB package, Drain and tab share the same electrical node. Electrical isolation from the heatsink is required unless the Drain is referenced to system ground; insulating pads or shoulder washers must be used in floating-drain configurations.
What is the purpose of the built-in gate protection diode in the 2SK3435-AZ?
The built-in gate-source diode in the 2SK3435-AZ provides electrostatic discharge (ESD) protection per human-body model (HBM), safeguarding the thin gate oxide during handling and assembly. However, it is not rated for system-level transients - external gate protection (e.g., Zener clamp or RC snubber) remains mandatory when the 2SK3435-AZ is exposed to voltage spikes exceeding ±20 V in final circuit operation.
2SK3435-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 84W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
2SK3435-AZ FAQ
1.How can I place an order for 2SK3435-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3435-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3435-AZ reliable?
The price and inventory of 2SK3435-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3435-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3435-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3435-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3435-AZ?
2SK3435-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3435-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3435-AZ?
For technical support, including 2SK3435-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3435-AZ requirements.
6.How does Aetrix verify that 2SK3435-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3435-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3435-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3435-AZ?
All 2SK3435-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3435-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3435-AZ part is unused and in its original packaging.
Return procedure for 2SK3435-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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