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Renesas NP88N075EUE-E2-AY
- Part No.:
- NP88N075EUE-E2-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
NP88N075EUE-E2-AY.pdf
- Description:
- NP88N075EUE - POWER MOSFETS FOR
- Quantity:
- Payment:
- Shipping:
Inventory:1,600
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Product details
Overview
NP88N075EUE-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers 88 A continuous drain current at TC = 25°C, features 8.5 mΩ maximum RDS(on) at VGS = 10 V and ID = 44 A, and supports 75 V drain-to-source voltage with 175°C channel temperature rating.
For engineers reviewing the NP88N075EUE-E2-AY datasheet, NP88N075EUE-E2-AY pinout, NP88N075EUE-E2-AY application, or NP88N075EUE-E2-AY equivalent, this device is selected for high-efficiency, thermally demanding switch-mode power conversion where low conduction loss and robust avalanche capability are critical.
Technical Context
This MOSFET uses a planar silicon process optimized for low RDS(on) and fast switching in hard-switched topologies. Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 10 V gate drivers, and its 230 nC total gate charge reflects trade-offs between drive strength requirements and switching speed.
The device integrates a body diode with 1.0 V forward voltage at 88 A and 80 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge configurations. Its 450 mJ single-pulse avalanche energy (IAS = 69 A) provides margin against inductive switching transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum blocking voltage in off-state; suitable for 48 V bus systems with safety margin. |
| ID(DC) | ±88 A at TC = 25°C - Continuous current handling limited by thermal resistance to case (0.52 °C/W). |
| RDS(on) MAX | 8.5 mΩ at VGS = 10 V, ID = 44 A - Defines conduction loss of ~32 W at 88 A, requiring heatsinking. |
| QG | 150–230 nC - Gate drive energy requirement; determines driver IC selection and switching loss profile. |
| Tch Rating | 175°C - Enables operation in high-ambient environments such as enclosed industrial enclosures. |
| EAS | 450 mJ (IAS = 69 A) - Avalanche ruggedness allows safe clamping of inductive kick without external snubbers. |
| Ciss | 8200–12300 pF - Input capacitance impacts gate drive loop stability and turn-on timing under fixed-VGS conditions. |
Pinout & Package
NP88N075EUE-E2-AY is housed in TO-263 (MP-25ZJ) surface-mount package with exposed drain tab for thermal conduction. The package weighs approximately 1.4 g and features Pb-free pure Sn plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Lead) | Gate | Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD per internal gate oxide structure. |
| 2 (Tab/Fin) | Drain | Main high-side current path; electrically connected to exposed metal tab for thermal and electrical sinking. |
| 3 (Lead) | Source | Reference node for gate drive; carries full load current and forms return path for body diode conduction. |
| 4 (Tab/Fin) | Drain (redundant) | Second drain connection on same thermal pad; improves current sharing and thermal spreading in PCB layout. |
Key Features
| Feature | Design Value |
|---|---|
| Super low RDS(on) | 8.5 mΩ max ensures <32 W conduction loss at 88 A, reducing heatsink size in compact power modules. |
| 175°C channel rating | Enables sustained operation in sealed enclosures up to 105°C ambient when mounted on 2 oz copper with thermal vias. |
| High avalanche energy | 450 mJ single-pulse rating eliminates need for external clamping in 48 V motor control H-bridges. |
| Low QGD/QG ratio | 52 nC / 230 nC ≈ 23% - Reduces Miller-induced shoot-through risk during hard commutation. |
| Pb-free plating | Complies with RoHS Directive; compatible with lead-free reflow profiles up to 260°C for 10 s. |
Applications
| Industrial DC Motor Drives | Server PSU Primary Switch |
|---|---|
Use Scenario: High-current half-bridge in 48 V brushless DC motor controllers for factory automation. IC Role / Device Role / Timing Role: Main switching element in high-side position; handles bidirectional current during PWM commutation. Use Value: 8.5 mΩ RDS(on) minimizes I²R losses at 80 A peak, enabling >97% efficiency at full load with forced-air cooling. |
Use Scenario: Primary-side switching transistor in LLC resonant converter for 1 kW server power supply. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous rectification stage. Use Value: 1.0 V body diode VF and 80 ns trr reduce reverse recovery losses versus discrete Schottky solutions. |
| Uninterruptible Power Systems | Solar Inverter DC-DC Stage |
Use Scenario: Bidirectional DC switch in battery isolation circuit of 3-phase UPS with 75 V nominal bus. IC Role / Device Role / Timing Role: Solid-state relay replacement; conducts 88 A continuously during battery discharge mode. Use Value: 175°C channel rating supports derated operation at 125°C case temperature in fanless UPS chassis. |
Use Scenario: Step-up DC-DC switch in string-level MPPT converter for residential solar inverters. IC Role / Device Role / Timing Role: High-side switch in boost topology operating at 50–100 kHz with 60 V input range. Use Value: 450 mJ EAS withstands lightning-induced surge transients on PV input without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH88N075L2 | Higher RDS(on) (10.5 mΩ), lower QG (170 nC), TO-247 package | Requires through-hole PCB layout; better suited for lower-frequency, higher-voltage (>100 V) designs | Select if board space permits through-hole mounting and gate drive is current-limited. |
| STP88N75F6 | Lower RDS(on) (7.2 mΩ), higher Ciss (10500 pF), same TO-263 package | Improved conduction loss but slower switching due to higher input capacitance | Prefer for DC/DC converters prioritizing efficiency over switching frequency. |
Compared with NP88N075EUE-E2-AY, IXTH88N075L2 trades surface-mount convenience for higher conduction loss and larger footprint, while STP88N75F6 improves RDS(on) at the cost of increased gate drive demand and reduced dV/dt immunity.
Availability
NP88N075EUE-E2-AY is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power systems, and solar inverter DC-DC stages requiring stable component supply and long-term lifecycle support.
Supply support for NP88N075EUE-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.
NP88N075EUE-E2-AY belongs to Renesas' legacy high-current N-channel MOSFET product line, engineered for industrial-grade switching applications demanding ruggedness, thermal reliability, and high-current density in surface-mount form factors.
FAQ
What is the maximum continuous drain current rating for NP88N075EUE-E2-AY?
The NP88N075EUE-E2-AY is rated for ±88 A continuous drain current at case temperature TC = 25°C. This rating assumes adequate heatsinking to maintain junction temperature below 175°C. At higher case temperatures, derating applies per Figure 2 in the datasheet - for example, at TC = 100°C, the usable ID(DC) drops to approximately 45 A.
Does NP88N075EUE-E2-AY support gate drive voltages below 10 V?
Yes, NP88N075EUE-E2-AY has a gate threshold voltage VGS(th) of 2.0–4.0 V, so it begins conducting at low gate voltages. However, full enhancement and minimum RDS(on) require VGS ≥ 10 V. At VGS = 4.5 V, RDS(on) rises significantly (typically >25 mΩ), increasing conduction loss - thus 10 V drive is recommended for high-efficiency operation.
Is NP88N075EUE-E2-AY suitable for avalanche-prone circuits like inductive loads?
Yes, NP88N075EUE-E2-AY is explicitly characterized for avalanche operation, with 450 mJ single-pulse avalanche energy at IAS = 69 A. This makes it suitable for driving solenoids, relays, and motors where inductive kick must be safely clamped without external components - provided test conditions (VDD = 35 V, RG = 25 Ω, Tch = 25°C) are respected.
What is the thermal resistance from channel to case for NP88N075EUE-E2-AY?
The channel-to-case thermal resistance Rth(ch-C) of NP88N075EUE-E2-AY is 0.52 °C/W. This value is measured under standardized mounting conditions (flat, bare copper heatsink, thermal interface material). Achieving this performance requires proper soldering of the drain tab to a large copper area with ≥6 thermal vias to inner ground planes.
Can NP88N075EUE-E2-AY be used in a synchronous rectifier configuration?
Yes, NP88N075EUE-E2-AY can serve as a synchronous rectifier due to its low RDS(on) and integrated body diode with VF(S-D) = 1.0 V at IF = 88 A. Its 80 ns reverse recovery time and 240 nC Qrr enable efficient operation in high-frequency DC-DC converters, though gate timing must avoid shoot-through during dead-time transitions.
NP88N075EUE-E2-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 288W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263-3
NP88N075EUE-E2-AY FAQ
1.How can I place an order for NP88N075EUE-E2-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for NP88N075EUE-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NP88N075EUE-E2-AY reliable?
The price and inventory of NP88N075EUE-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NP88N075EUE-E2-AY is usually 5 days.
3.What payment methods are accepted for NP88N075EUE-E2-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NP88N075EUE-E2-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NP88N075EUE-E2-AY?
NP88N075EUE-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NP88N075EUE-E2-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NP88N075EUE-E2-AY?
For technical support, including NP88N075EUE-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NP88N075EUE-E2-AY requirements.
6.How does Aetrix verify that NP88N075EUE-E2-AY is sourced from the original manufacturer or authorized distributors?
All NP88N075EUE-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NP88N075EUE-E2-AY meets industry standards.
7.What is the process for return or replacement of NP88N075EUE-E2-AY?
All NP88N075EUE-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with NP88N075EUE-E2-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NP88N075EUE-E2-AY part is unused and in its original packaging.
Return procedure for NP88N075EUE-E2-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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