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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3357-A

Name: 2SK3357-A
Brand: Renesas
SKU: 2SK3357-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3357-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: 2SK3357-A.pdf

Description:: 2SK3357 - N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK3357-A from Renesas Electronics is an N-channel power MOSFET designed for high-current DC-DC converter primary-side switching, motor drive H-bridge legs, and industrial SMPS applications. It delivers R_DS(on)1 = 5.8 mΩ max at V_GS = 10 V / I_D = 38 A, supports ±300 A pulsed drain current, and features built-in gate protection diode for ESD robustness.

For engineers reviewing the 2SK3357-A datasheet, 2SK3357-A pinout, 2SK3357-A application, or 2SK3357-A equivalent, this page provides verified package mapping (TO-3P), avalanche energy rating (E_AS = 562 mJ), thermal resistance (R_th(ch–C) = 0.83 °C/W), and real-world switching timing (t_d(off) = 500 ns) to support layout, thermal design, and reliability validation.

Technical Context

This device uses a vertical double-diffused MOS (VDMOS) structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (Q_G = 170 nC, Q_GD = 46 nC) enables efficient gate driver sizing, while the body diode's t_rr = 64 ns and Q_rr = 130 nC support synchronous rectification in flyback and LLC designs.

The 2SK3357-A operates within a V_DSS = 60 V rating and supports gate drive down to V_GS = 4.0 V (R_DS(on)2 = 8.8 mΩ max), making it compatible with 3.3 V and 5 V logic-level controllers. Its channel temperature limit of 150 °C and single-pulse avalanche capability (I_AS = 75 A) enable use in overvoltage transient-prone industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for 48 V nominal bus systems with 20 % margin
R_DS(on)1	5.8 mΩ max - Enables <1.5 W conduction loss at 38 A DC, critical for high-efficiency SMPS
I_D(pulse)	±300 A - Supports short-circuit withstand in motor drives without immediate failure
E_AS	562 mJ - Allows safe clamping of inductive kickback in relay drivers and solenoid controls
C_iss	9800 pF typ - Determines gate drive power requirement (~1.7 mW at 100 kHz, V_GS swing = 10 V)
t_d(off)	500 ns - Sets minimum dead-time budget in half-bridge configurations to prevent shoot-through
V_GS(off)	1.5–2.5 V - Ensures reliable turn-off with standard 3.3 V microcontroller GPIOs

Pinout & Package

2SK3357-A is housed in a TO-3P (MP-88) thermally enhanced through-hole package with isolated metal tab (Drain-connected fin). The case serves as both heatsink interface and high-current Drain terminal, requiring insulated mounting hardware when mounted to grounded chassis.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring <170 nC total charge; sensitive to ESD (protected by internal diode)
2 (Drain)	High-side power switch node	Connected to metal tab; carries full load current and must be electrically isolated from heatsink if not referenced to system ground
3 (Source)	Power return reference	Low-inductance source path essential for stable gate drive; ties to power ground plane near driver IC
4 (Fin/Drain)	Thermal & electrical Drain extension	Integral metal fin improves thermal transfer to heatsink; electrically identical to Pin 2 and must share same potential

Key Features

Feature	Design Value
Super low R_DS(on) at 4 V gate drive	R_DS(on)2 = 8.8 mΩ max enables direct drive from 3.3 V MCUs without level-shifting
Built-in gate protection diode	ESD-rated gate structure reduces need for external TVS in moderate-noise environments
Low C_iss / C_oss ratio	C_iss = 9800 pF, C_oss = 1500 pF - Improves hard-switching efficiency and reduces Miller-induced false turn-on risk
Fast body diode recovery	t_rr = 64 ns, Q_rr = 130 nC - Minimizes reverse-recovery losses in non-synchronous buck converters
Avalanche-rated operation	Rated for single-pulse I_AS = 75 A - Permits unclamped inductive switching in relay/snubberless designs

Applications

Industrial DC-DC Converters	Brushed DC Motor Drives
Use Scenario: 48 V input, 12 V/20 A output isolated forward converter in factory automation PLC power supplies. IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 100–200 kHz with hard-switched PWM control. Use Value: Low R_DS(on) reduces conduction loss below 1.2 W at full load, improving overall efficiency to >92 % while maintaining thermal margin on 50 mm × 50 mm heatsink.	Use Scenario: Bidirectional 24 V, 30 A brushed motor control in automated gate actuators and conveyor positioning systems. IC Role / Device Role / Timing Role: High-side switch in H-bridge leg, driven by isolated gate driver with 500 ns minimum dead time. Use Value: Avalanche rating absorbs back-EMF spikes during rapid deceleration, eliminating need for external freewheeling diodes and reducing BOM count.
Uninterruptible Power Supplies	Inductive Load Switching
Use Scenario: Battery-backed 24 V UPS output stage delivering up to 15 A continuous to telecom equipment. IC Role / Device Role / Timing Role: Output synchronous rectifier MOSFET in active OR-ing configuration with fast turn-on/turn-off. Use Value: Fast t_f = 480 ns and low Q_GD/Q_G ratio ensure precise timing alignment with upstream controller, minimizing cross-conduction risk.	Use Scenario: Solid-state replacement for mechanical relays controlling 24 V solenoids and pneumatic valves in process control panels. IC Role / Device Role / Timing Role: Single-ended switch with snubberless operation enabled by rated avalanche energy. Use Value: E_AS = 562 mJ allows safe interruption of 200 mA inductive current without external clamping, extending system lifetime and reducing maintenance.

Industrial DC-DC Converters

Brushed DC Motor Drives

Use Scenario: 48 V input, 12 V/20 A output isolated forward converter in factory automation PLC power supplies.

IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 100–200 kHz with hard-switched PWM control.

Use Value: Low R_DS(on) reduces conduction loss below 1.2 W at full load, improving overall efficiency to >92 % while maintaining thermal margin on 50 mm × 50 mm heatsink.

Use Scenario: Bidirectional 24 V, 30 A brushed motor control in automated gate actuators and conveyor positioning systems.

IC Role / Device Role / Timing Role: High-side switch in H-bridge leg, driven by isolated gate driver with 500 ns minimum dead time.

Use Value: Avalanche rating absorbs back-EMF spikes during rapid deceleration, eliminating need for external freewheeling diodes and reducing BOM count.

Uninterruptible Power Supplies

Inductive Load Switching

Use Scenario: Battery-backed 24 V UPS output stage delivering up to 15 A continuous to telecom equipment.

IC Role / Device Role / Timing Role: Output synchronous rectifier MOSFET in active OR-ing configuration with fast turn-on/turn-off.

Use Value: Fast t_f = 480 ns and low Q_GD/Q_G ratio ensure precise timing alignment with upstream controller, minimizing cross-conduction risk.

Use Scenario: Solid-state replacement for mechanical relays controlling 24 V solenoids and pneumatic valves in process control panels.

IC Role / Device Role / Timing Role: Single-ended switch with snubberless operation enabled by rated avalanche energy.

Use Value: E_AS = 562 mJ allows safe interruption of 200 mA inductive current without external clamping, extending system lifetime and reducing maintenance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	V_DSS = 60 V, R_DS(on) = 10.5 mΩ @ 10 V, TO-220 package, no integrated gate protection diode	Larger R_DS(on) increases conduction loss by ~80 % at 38 A; requires external gate ESD protection	Choose STP60NF06 only if TO-220 footprint compatibility is mandatory and thermal margin permits higher loss.
IXTH50N60L2	V_DSS = 600 V, R_DS(on) = 45 mΩ @ 10 V, TO-247 package, optimized for high-voltage flyback	Over-specified voltage rating wastes cost and area; unsuitable for 48 V bus due to excessive R_DS(on) and gate charge	Select IXTH50N60L2 only for 400 V+ applications; avoid for 60 V-class designs where 2SK3357-A offers superior efficiency and thermal performance.

Compared with STP60NF06 and IXTH50N60L2, the 2SK3357-A provides optimal balance of low R_DS(on), fast switching, and integrated gate protection for 48 V industrial power stages - enabling smaller heatsinks, simpler gate drive, and higher reliability in motor and SMPS applications.

Availability

2SK3357-A is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushed DC motor drives, and uninterruptible power supplies requiring stable component supply and long-term lifecycle support.

Supply support for 2SK3357-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.

The 2SK3357-A belongs to Renesas' legacy high-current power MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding low on-resistance, avalanche robustness, and thermal stability under sustained load.

FAQ

What is the maximum continuous drain current rating for the 2SK3357-A at 25°C case temperature?

The 2SK3357-A has a DC drain current rating of ±75 A when measured at T_C = 25°C. This rating assumes ideal heatsinking and is derated linearly above 25°C using the specified R_th(ch–C) = 0.83 °C/W. At T_C = 80°C, the usable I_D(DC) drops to approximately ±42 A. Always verify thermal design with actual board layout and airflow in the final 2SK3357-A application.

Does the 2SK3357-A include a body diode, and what are its key conduction parameters?

Yes, the 2SK3357-A integrates a parasitic body diode between Source and Drain. Its forward voltage is V_F(S–D) = 0.96 V at I_F = 75 A and V_GS = 0 V, with reverse recovery time t_rr = 64 ns and Q_rr = 130 nC under specified test conditions. These values are critical for estimating commutation losses in non-synchronous topologies and must be validated in the actual 2SK3357-A circuit layout.

Can the 2SK3357-A be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

The 2SK3357-A can be partially turned on with 3.3 V gate drive, but its R_DS(on)2 = 8.8 mΩ max is specified at V_GS = 4.0 V - meaning 3.3 V yields higher on-resistance and increased conduction loss. For reliable switching, a dedicated gate driver is recommended. The 2SK3357-A's Q_G = 170 nC also exceeds typical GPIO current capability, making direct drive impractical in dynamic applications.

What is the thermal resistance from channel to case (R_th(ch–C)) for the 2SK3357-A, and how does it impact heatsink selection?

The 2SK3357-A has R_th(ch–C) = 0.83 °C/W, measured from silicon channel to the metal tab (Drain/Fin). This low value enables compact heatsink designs - for example, dissipating 30 W at T_ch = 125°C requires only a 36 °C/W heatsink when ambient is 40°C. Mounting interface quality (thermal paste, torque, flatness) directly affects real-world performance of the 2SK3357-A thermal path.

Is the 2SK3357-A suitable for automotive applications, and what quality grade does it carry?

The 2SK3357-A is classified as "Standard" grade per Renesas documentation, intended for computers, office equipment, industrial robots, and communications gear - not automotive or safety-critical systems. It lacks AEC-Q101 qualification and is not approved for use in vehicles. For automotive-grade alternatives, consult Renesas' RAJ series or contact Aetrix Electronics for qualified replacements compatible with the 2SK3357-A footprint and specs.

2SK3357-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9800 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 150W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P (MP-88)

2SK3357-A FAQ

1.How can I place an order for 2SK3357-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3357-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3357-A reliable?

The price and inventory of 2SK3357-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3357-A is usually 5 days.

3.What payment methods are accepted for 2SK3357-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3357-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3357-A?

2SK3357-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3357-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3357-A?

For technical support, including 2SK3357-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3357-A requirements.

6.How does Aetrix verify that 2SK3357-A is sourced from the original manufacturer or authorized distributors?

All 2SK3357-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3357-A meets industry standards.

7.What is the process for return or replacement of 2SK3357-A?

All 2SK3357-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3357-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3357-A part is unused and in its original packaging.

Return procedure for 2SK3357-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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