My Inquiry
My Account
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GCMS080B120S1-E1SIC 1200V 80M MOSFET & 10A SBD S |
37 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1374 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
TW030N120C,S1FG3 1200V SIC-MOSFET TO-247 30MO |
30 | 0.00 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 40mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
IXTN40P50PMOSFET P-CH 500V 40A SOT227B |
64 | 0.00 |
|
Datasheet |
PolarP™ | SOT-227-4, miniBLOC | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 230mOhm @ 500mA, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 11500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
APT5010JVRMOSFET N-CH 500V 44A ISOTOP |
12 | 0.00 |
|
Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT5010JVFRMOSFET N-CH 500V 44A ISOTOP |
20 | 0.00 |
|
Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
MSC035SMA170SMOSFET SIC 1700V 35 MOHM TO-268 |
23 | 0.00 |
|
Datasheet |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 59A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
IXFN170N30PMOSFET N-CH 300V 138A SOT-227B |
7 | 0.00 |
|
Datasheet |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 138A (Tc) | 10V | 18mOhm @ 85A, 10V | 4.5V @ 1mA | 258 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
MMIX1F420N10TMOSFET N-CH 100V 334A 24SMPD |
60 | 0.00 |
|
Datasheet |
GigaMOS™, HiPerFET™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 334A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 4700 pF @ 10 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
|
APT50M65JLLMOSFET N-CH 500V 58A ISOTOP |
20 | 0.00 |
|
Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
MSC40SM120JCU3SICFET N-CH 1.2KV 55A SOT227 |
66 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
|
MSC017SMA120JMOSFET SIC 1200V 17 MOHM SOT-227 |
17 | 0.00 |
|
Datasheet |
- | - | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 88A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +23V, -10V | 5280 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | SOT-227 |
|
|
TW015N65C,S1FG3 650V SIC-MOSFET TO-247 15MOH |
52 | 0.00 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
MSC100SM70JCU3SICFET N-CH 700V 124A SOT227 |
14 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 365W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
|
MSC70SM120JCU2SICFET N-CH 1.2KV 89A SOT227 |
24 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
|
APT50M50JVFRMOSFET N-CH 500V 77A ISOTOP |
6 | 0.00 |
|
Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | - | 19600 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
MSC130SM120JCU3SICFET N-CH 1.2KV 173A SOT227 |
18 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
|
IXFN70N120SKSICFET N-CH 1200V 68A SOT227B |
10 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 161 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
MSCSM120DAM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 |
23 | 0.00 |
|
Datasheet |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
EPC7014UBSHGAN FET HEMT 60V 1A 4UB |
11 | 0.00 |
|
Datasheet |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 60 V | 1A (Tc) | 5V | 580mOhm @ 1A, 5V | 2.5V @ 140µA | - | - | 22 pF @ 30 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
FBG04N30BSHGAN FET HEMT 40V 30A 4FSMD-B |
13 | 0.00 |
|
Datasheet |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 30A (Tc) | 5V | 9mOhm @ 30A, 5V | 2.5V @ 9mA | 11.4 nC @ 5 V | +6V, -4V | 1300 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
