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Toshiba Semiconductor and Storage TW015N65C,S1F
- Part No.:
- TW015N65C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
TW015N65C,S1F.pdf
- Description:
- G3 650V SIC-MOSFET TO-247 15MOH
- Quantity:
- Payment:
- Shipping:
Inventory:52
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Product details
Overview
TW015N65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and industrial SMPS. It delivers 650 V blocking capability, 15 mΩ typical RDS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates up to 175 °C channel temperature.
For engineers reviewing the TW015N65C,S1F datasheet, TW015N65C,S1F pinout, TW015N65C,S1F application, or TW015N65C,S1F equivalent, key selection criteria include its third-generation SiC chip architecture, gate drive compatibility with 18 V turn-on, low Qgd (19 nC), and robust pulsed drain current rating of 360 A at Tc = 25 °C.
Technical Context
This device implements an enhancement-mode SiC MOSFET with built-in unipolar Schottky body diode-eliminating minority-carrier recovery losses and enabling zero-recovery-charge operation in hard-switched topologies. Its 3.0–5.0 V threshold voltage range ensures noise immunity while maintaining gate drive simplicity.
The TO-247 package features isolated heatsink-connected drain (Pin 2), enabling direct thermal mounting without insulating pads. Dynamic parameters-including 4850 pF Ciss, 12 pF Crss, and 575 pF Co(er)-are optimized for high-frequency ZVS and resonant converter designs operating above 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports 400 V bus systems with ≥60 % derating margin for surge and ringing |
| RDS(ON) | 15 mΩ (typ.) at VGS = 18 V, ID = 50 A - enables <1.2 W conduction loss at 90 A RMS in 3.3 kW LLC stage |
| Vth | 3.0–5.0 V - provides stable turn-on under noisy gate-drive conditions without false triggering |
| VDSF | −1.35 V (typ.) - reduces reverse-conduction loss by >40 % vs. Si MOSFET body diodes in synchronous rectification |
| Qgd | 19 nC - minimizes Miller-induced switching delay and improves controllability in high-dV/dt environments |
| Tch(max) | 175 °C - allows full-rated operation in sealed industrial enclosures without forced air cooling |
| ID(pulse) | 360 A - supports peak-current mode control in high-power PFC stages with 2× overload tolerance |
Pinout & Package
Package: TO-247 (TOSHIBA 2-16L1A), thermally enhanced plastic case with isolated heatsink tab (Drain connected to Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring 18 V turn-on; gate resistance of 1.0 Ω limits dI/dt during switching |
| 2 | Drain (Heatsink) | Main high-side power path; electrically tied to metal tab for direct thermal interface to heatsink |
| 3 | Source | Reference node for gate drive; connects to low-side switch source or ground return in half-bridge layout |
Key Features
| Feature | Design Value |
|---|---|
| Integrated SiC Schottky body diode | Eliminates reverse recovery charge (Qrr = 0) and associated EMI in hard-switched converters |
| Third-generation SiC chip design | Reduces dynamic losses by 22 % vs. first-gen SiC MOSFETs at 200 kHz switching frequency |
| High Vth range (3.0–5.0 V) | Prevents spurious turn-on during high dv/dt commutation events in multi-kW inverters |
| Low Crss/Ciss ratio (12/4850 pF) | Improves voltage-controlled switching stability and reduces gate drive power requirement |
| Guaranteed 175 °C channel rating | Enables compact thermal design in space-constrained server PSU and EV charger modules |
Applications
| Industrial SMPS | Server Power Supplies |
|---|---|
Use Scenario: High-density 3.3 kW telecom rectifier operating at 200 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC input and delivering regulated 12 V output via transformer isolation. Use Value: 15 mΩ RDS(ON) and −1.35 V VDSF reduce total conduction loss by 31 % versus discrete Si MOSFET + SiC diode solution. | Use Scenario: 2 kW redundant AC-DC front-end module in hyperscale data center rack power system. IC Role / Device Role / Timing Role: Active clamp flyback switch managing 380 V DC link and supporting 96 % efficiency at full load. Use Value: 360 A pulsed current rating enables 2× overcurrent headroom during cold-start inrush limiting without derating. |
| EV Onboard Chargers | Renewable Energy Inverters |
Use Scenario: Bidirectional 6.6 kW OBC using dual-phase interleaved totem-pole PFC stage. IC Role / Device Role / Timing Role: Low-side switch in totem-pole configuration conducting reverse current during AC half-cycle regeneration. Use Value: Integrated SiC Schottky diode enables zero-Qrr reverse conduction, eliminating shoot-through risk and reducing EMI filter size by 35 %. | Use Scenario: 15 kW string inverter DC-AC stage with three-level NPC topology for residential solar. IC Role / Device Role / Timing Role: Outer-leg switching device handling 650 V DC bus and modulating 50/60 Hz output waveform. Use Value: 175 °C Tch rating permits operation at 75 °C ambient without airflow, simplifying outdoor enclosure thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N65M5 | 650 V, 48 mΩ RDS(ON), no integrated body diode, requires external SiC SBD | Higher conduction loss in bidirectional topologies; suitable only for unidirectional hard-switched PFC | Select when cost sensitivity outweighs efficiency targets and external diode layout area is acceptable |
| IXFH40N65X2 | 650 V, 40 mΩ RDS(ON), 120 nC Qg, higher Coss (1100 pF) | Slower switching transitions; limited to ≤100 kHz operation due to elevated switching loss | Choose for legacy gate driver compatibility where 18 V gate drive is unavailable |
Compared with STW48N65M5 and IXFH40N65X2, the TW015N65C,S1F offers lowest RDS(ON) and integrated body diode-making it optimal for high-frequency, bidirectional, and thermally constrained applications where efficiency and layout simplicity are prioritized over gate drive voltage flexibility or BOM count reduction.
Availability
TW015N65C,S1F is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TW015N65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global distribution and automotive-grade qualification capabilities.
The TW015N65C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in industrial, computing, and electric vehicle infrastructure.
FAQ
What is the maximum continuous drain current rating for TW015N65C,S1F at 100 °C case temperature?
The TW015N65C,S1F supports 82 A continuous drain current (ID) at Tc = 100 °C, as specified in its Absolute Maximum Ratings table. This rating reflects thermal derating from the 100 A value at Tc = 25 °C and must be applied with proper heatsinking to maintain channel temperature ≤175 °C. Designers should verify junction temperature rise using Rth(ch-c) = 0.438 °C/W under actual operating conditions.
Does TW015N65C,S1F require negative gate voltage for reliable turn-off?
No, TW015N65C,S1F does not require negative gate voltage for turn-off. Its recommended gate-source drive is VGS_off = 0 V, leveraging its enhancement-mode architecture and 3.0–5.0 V threshold voltage. Applying negative voltage is unnecessary and may increase gate oxide stress; the device achieves clean turn-off with zero-volt gate bias when paired with low-impedance gate drivers.
Can TW015N65C,S1F replace silicon MOSFETs in existing 650 V designs without layout changes?
Direct replacement of silicon MOSFETs with TW015N65C,S1F is possible only if the PCB layout accommodates its TO-247 footprint and thermal interface requirements-but gate drive voltage must be upgraded to 18 V (not 10–12 V used for Si devices), and snubber networks may need re-optimization due to faster switching edges. Layout changes are typically required for optimal performance and reliability.
What is the reverse recovery behavior of TW015N65C,S1F during body diode conduction?
The TW015N65C,S1F exhibits zero reverse recovery charge (Qrr = 0) and negligible reverse recovery time (trr ≈ 0 ns) because its integrated body diode is a unipolar SiC Schottky barrier diode-not a parasitic PN junction. This eliminates reverse recovery losses and associated EMI, making it ideal for totem-pole PFC and other bidirectional switching topologies.
Is TW015N65C,S1F compliant with RoHS Directive 2011/65/EU?
Yes, TW015N65C,S1F is RoHS compliant per Directive 2011/65/EU, as confirmed by Toshiba's marking notation: underlined lot numbers indicate [[G]]/RoHS COMPATIBLE status. Full compliance documentation-including substance declarations and test reports-is available through Toshiba's official support channels and authorized distributors.
TW015N65C,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 11.7mA
- Gate Charge (Qg) (Max) @ Vgs:
- 128 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4850 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 342W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
TW015N65C,S1F FAQ
1.How can I place an order for TW015N65C,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TW015N65C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TW015N65C,S1F reliable?
The price and inventory of TW015N65C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW015N65C,S1F is usually 5 days.
3.What payment methods are accepted for TW015N65C,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW015N65C,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TW015N65C,S1F?
TW015N65C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TW015N65C,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TW015N65C,S1F?
For technical support, including TW015N65C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW015N65C,S1F requirements.
6.How does Aetrix verify that TW015N65C,S1F is sourced from the original manufacturer or authorized distributors?
All TW015N65C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW015N65C,S1F meets industry standards.
7.What is the process for return or replacement of TW015N65C,S1F?
All TW015N65C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW015N65C,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TW015N65C,S1F part is unused and in its original packaging.
Return procedure for TW015N65C,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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