Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFX98N50P3 MOSFET N-CH 500V 98A PLUS247-3 Littelfuse Inc.	64	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	98A (Tc)	10V	50mOhm @ 500mA, 10V	5V @ 8mA	197 nC @ 10 V	±30V	13100 pF @ 25 V	-	1300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
APT5014BLLG MOSFET N-CH 500V 35A TO247 Microchip Technology	41	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	35A (Tc)	10V	140mOhm @ 17.5A, 10V	5V @ 1mA	72 nC @ 10 V	±30V	3261 pF @ 25 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
MSC035SMA070S MOSFET N-CH 700V D3PAK Microchip Technology	68	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	65A (Tc)	20V	44mOhm @ 30A, 20V	2.7V @ 1mA	99 nC @ 20 V	+23V, -10V	2010 pF @ 700 V	-	206W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
APT106N60B2C6 MOSFET N-CH 600V 106A T-MAX Microchip Technology	38	RFQ	Datasheet	CoolMOS™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
TW048N65C,S1F G3 650V SIC-MOSFET TO-247 48MOH Toshiba Semiconductor and Storage	29	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	18V	65mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	-	-	Through Hole	TO-247
TK62Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	11	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
APT5010LVRG MOSFET N-CH 500V 47A TO264 Microchip Technology	19	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
IXTT40N50L2 MOSFET N-CH 500V 40A TO268 Littelfuse Inc.	47	RFQ	Datasheet	Linear L2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	40A (Tc)	10V	170mOhm @ 20A, 10V	4.5V @ 250µA	320 nC @ 10 V	±20V	10400 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
APT29F100B2 MOSFET N-CH 1000V 30A T-MAX Microchip Technology	11	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	30A (Tc)	10V	440mOhm @ 16A, 10V	5V @ 2.5mA	260 nC @ 10 V	±30V	8500 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
TW060N120C,S1F G3 1200V SIC-MOSFET TO-247 60MO Toshiba Semiconductor and Storage	15	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	78mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	-	-	Through Hole	TO-247
GP2T040A120H SIC MOSFET 1200V 40M TO-247-4L SemiQ	60	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	118 nC @ 20 V	+25V, -10V	3192 pF @ 1000 V	-	322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT106N60LC6 MOSFET N-CH 600V 106A TO264 Microchip Technology	38	RFQ	Datasheet	CoolMOS™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)
APT48M80L MOSFET N-CH 800V 49A TO264 Microchip Technology	82	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	49A (Tc)	10V	200mOhm @ 24A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9330 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT10078BLLG MOSFET N-CH 1000V 14A TO247 Microchip Technology	30	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	14A (Tc)	10V	780mOhm @ 7A, 10V	5V @ 1mA	95 nC @ 10 V	±30V	2525 pF @ 25 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
TW027N65C,S1F G3 650V SIC-MOSFET TO-247 27MOH Toshiba Semiconductor and Storage	35	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	37mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	-	-	Through Hole	TO-247
APT28M120B2 MOSFET N-CH 1200V 29A T-MAX Microchip Technology	56	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	29A (Tc)	10V	560mOhm @ 14A, 10V	5V @ 2.5mA	300 nC @ 10 V	±30V	9670 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT10050LVRG MOSFET N-CH 1000V 21A TO264 Microchip Technology	25	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	500mOhm @ 500mA, 10V	4V @ 2.5mA	500 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
MSC040SMA120B SICFET N-CH 1200V 66A TO247-3 Microchip Technology	35	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	66A (Tc)	20V	50mOhm @ 40A, 20V	2.7V @ 2mA	137 nC @ 20 V	+23V, -10V	1990 pF @ 1000 V	-	323W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
GCMX080B120S1-E1 SIC 1200V 80M MOSFET SOT-227 SemiQ	48	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1336 pF @ 1000 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
MSC040SMA120S SICFET N-CH 1200V 64A TO268 Microchip Technology	12	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	64A (Tc)	20V	50mOhm @ 40A, 20V	2.6V @ 2mA	137 nC @ 20 V	+23V, -10V	1990 pF @ 1000 V	-	303W	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK

Total 72644 Record«Prev 1... 719 720 721 722723724 725 726...3633 Next»

PRODUCT

PHONE

USER