Toshiba Semiconductor and Storage TW048N65C,S1F

Overview

TW048N65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and AC-DC PFC stages. It delivers 650 V drain-source breakdown voltage, 48 mΩ typical R_DS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates with gate threshold voltage of 3.0–5.0 V at 10 V V_DS.

For engineers reviewing the TW048N65C,S1F datasheet, TW048N65C,S1F pinout, TW048N65C,S1F application, or TW048N65C,S1F equivalent, key selection criteria include its low conduction loss at high temperature, fast switching with 41 nC total gate charge, robust 175 °C channel rating, and TO-247 package thermal performance for industrial power supplies.

Technical Context

This SiC MOSFET employs third-generation chip design with monolithically integrated SiC Schottky barrier diode, eliminating external anti-parallel diodes in bridge configurations. Its enhancement-mode operation requires 18 V gate drive for full conduction and supports zero-voltage switching topologies due to low C_oss (156 pF typ.) and E_oss (14 µJ typ.) at 400 V.

The device features high immunity to dv/dt-induced turn-on (V_th = 3.0–5.0 V), low reverse recovery charge (Q_rr = 250 nC typ.), and guaranteed safe operating area up to 103 A pulsed drain current - enabling reliable operation in hard-switched 650 V systems without snubbers.

Key Specifications

Pinout & Package

Package: TO-247 (TOSHIBA 2-16L1A), isolated heatsink-compatible case, 6.15 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Compared with STPSC4065DL and IXTH40N65X2, TW048N65C,S1F offers best-in-class balance of conduction loss, integrated body diode functionality, and gate drive simplicity - making it ideal for volume production of 3–10 kW industrial power supplies where thermal management and BOM count are critical.

Availability

TW048N65C,S1F is available at Aetrix Electronics and suitable for industrial switching power supplies, server rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TW048N65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in wide-bandgap technologies and automotive-grade reliability.

The TW048N65C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability 650 V power conversion in industrial and infrastructure applications where thermal robustness and system-level simplification are prioritized.

FAQ

What is the maximum continuous drain current rating for TW048N65C,S1F at case temperature of 100 °C?

The TW048N65C,S1F has a maximum continuous drain current (I_D) rating of 28 A at T_c = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 40 A rating at T_c = 25 °C and ensures safe operation within the 175 °C channel temperature limit under sustained load conditions. The TW048N65C,S1F must be mounted on an adequately sized heatsink to maintain this current capability.

Does TW048N65C,S1F include an integrated body diode, and what is its forward voltage?

Yes, the TW048N65C,S1F integrates a silicon carbide Schottky barrier diode as part of its third-generation chip design. Its typical diode forward voltage (V_DSF) is −1.35 V at T_c = 25 °C and V_GS = 18 V, measured with 12 A reverse drain current. This low V_DSF reduces conduction loss and eliminates reverse recovery charge in bidirectional switching applications such as totem-pole PFC. The TW048N65C,S1F does not require an external anti-parallel diode in most configurations.

What gate drive voltage is recommended for optimal performance of TW048N65C,S1F?

Toshiba specifies a recommended gate-source drive voltage of V_GS(on) = +18 V and V_GS(off) = 0 V for the TW048N65C,S1F. Operating at 18 V ensures minimal R_DS(ON) and stable threshold margin, while the 0 V turn-off avoids unintended conduction. Gate drive must remain within the absolute maximum V_GS rating of +25 V / −10 V. The TW048N65C,S1F exhibits stable enhancement-mode behavior across its full V_th range of 3.0–5.0 V.

Is TW048N65C,S1F compatible with standard TO-247 heatsinks and mounting hardware?

Yes, the TW048N65C,S1F uses the industry-standard TO-247 package (TOSHIBA 2-16L1A), with pin 2 (Drain) electrically isolated from the case and thermally connected to the heatsink. Mounting torque is specified at 0.8 N·m, matching standard TO-247 mechanical requirements. Thermal resistance from channel to case is 1.133 °C/W, confirming compatibility with conventional TO-247 heatsink interfaces and thermal interface materials used in industrial power modules. The TW048N65C,S1F is fully interchangeable in existing TO-247 footprints.

What is the total gate charge (Q_g) of TW048N65C,S1F, and how does it impact switching speed?

The TW048N65C,S1F has a typical total gate charge (Q_g) of 41 nC at V_DD ≈ 400 V, V_GS = 18 V, and I_D = 20 A. This value directly determines gate driver current requirements: for 100 ns switching transitions, a peak driver current of ~410 mA is needed. Lower Q_g contributes to faster rise/fall times (43 ns tr, 32 ns tf) and reduced switching losses - a key advantage of the TW048N65C,S1F over silicon alternatives with comparable R_DS(ON).