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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK62Z60X,S1F

Name: TK62Z60X,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK62Z60X,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK62Z60X,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: TK62Z60X,S1F.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK62Z60X,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-efficiency switching voltage regulators. It delivers 600 V drain-source breakdown voltage, 61.8 A DC drain current, and ultra-low R_DS(ON) of 0.033 Ω (typ.) at V_GS = 10 V, enabling reduced conduction loss in high-power AC-DC and DC-DC converters.

For engineers reviewing the TK62Z60X,S1F datasheet, TK62Z60X,S1F pinout, TK62Z60X,S1F application, or TK62Z60X,S1F equivalent, key selection criteria include its TO-247-4L(T) 4-pin package with isolated gate return, avalanche ruggedness (E_AS = 698 mJ), and fast switching performance enabled by low C_iss (6500 pF typ.) and Q_g (135 nC typ.).

Technical Context

This DTMOS-H device uses a super-junction structure to achieve high-voltage capability with low on-resistance. Its enhancement-mode threshold (V_th = 2.5–3.5 V) ensures reliable turn-on with standard 10 V gate drive, while its 4-pin TO-247-4L(T) layout separates source return (Pin 3) from main current path (Pin 2) to minimize gate loop inductance and improve EMI behavior.

Thermal design is supported by R_th(ch-c) = 0.313 °C/W and T_ch rating up to 150 °C. The integrated body diode exhibits t_rr = 500 ns (typ.) and Q_rr = 7 µC (typ.), making it suitable for hard-switched topologies where reverse recovery stress must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC bus.
R_DS(ON)	0.033 Ω (typ.) at V_GS = 10 V - Enables <1.4 W conduction loss at 61.8 A, reducing heatsink requirements.
I_D (DC)	61.8 A - Rated for continuous operation at T_c = 25 °C; derates per PD–Tc curve (Fig. 8.15).
E_AS	698 mJ - Withstands single-pulse avalanche energy without failure, enhancing system robustness during overvoltage transients.
C_iss	6500 pF (typ.) at V_DS = 300 V - Low input capacitance enables faster gate charging and reduced driver power demand.
Q_g	135 nC (typ.) - Total gate charge determines required gate driver peak current for target switching speed.
t_r/t_f	40/10 ns (typ.) - Fast rise/fall times support >100 kHz switching frequencies with controlled dv/dt (240 V/ns).

Pinout & Package

Package: TO-247-4L(T), also designated 2-16M2A; thermally optimized 4-lead through-hole package with isolated gate return terminal and integral heat sink tab (Pin 1).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-side current path / Heat sink connection	Electrically connected to metal tab; must be mounted to heatsink with thermal interface material for R_th(ch-c) = 0.313 °C/W.
2 (Source 1)	Main current return path	Carries full load current; connects to power ground plane; minimizes voltage bounce during switching transitions.
3 (Source 2)	Gate drive return reference	Provides dedicated low-inductance return for gate driver loop only; prevents gate oscillation and improves noise immunity.
4 (Gate)	Control input	Receives gate drive signal referenced to Source 2; requires RG = 10 Ω (per Fig. 6.2.1) for specified switching times.

Key Features

Feature	Design Value
Super-junction DTMOS-H structure	Enables 600 V rating with R_DS(ON) 30% lower than conventional planar MOSFETs of same die size.
4-pin TO-247-4L(T) layout	Separates gate return (Pin 3) from power source (Pin 2), reducing gate loop inductance by >50% vs. 3-pin TO-247.
Avalanche-rated operation	Guaranteed E_AS = 698 mJ supports unclamped inductive switching without external snubbers in PFC and LLC designs.
Fast body diode	t_rr = 500 ns (typ.) and Q_rr = 7 µC (typ.) reduce reverse recovery losses and associated EMI in bridge configurations.
Enhancement-mode V_th	2.5–3.5 V range ensures clean turn-on with industry-standard 10 V gate drivers and avoids accidental conduction at low V_GS.

Applications

Server Power Supply	Industrial AC-DC Converter
Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in active clamp forward or LLC resonant topology. Use Value: Low R_DS(ON) and high E_AS enable >95% efficiency and withstand 600 V line surges without clamping circuitry.	Use Scenario: Main switch in 2 kW industrial motor drive DC bus converter with wide input range (380–480 VAC). IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in three-phase rectifier front-end stage. Use Value: 61.8 A DC rating and 150 °C channel temperature allow sustained operation under full load with forced-air cooling.
EV Onboard Charger	Renewable Energy Inverter
Use Scenario: Switching element in bidirectional AC-DC stage of 6.6 kW OBC handling both grid and vehicle battery interfaces. IC Role / Device Role / Timing Role: Synchronous rectifier and boost switch in dual-active-bridge topology. Use Value: Fast t_r/t_f and low Q_g support ZVS-assisted switching, reducing switching loss at 150–200 kHz.	Use Scenario: DC-link switch in 5 kW solar string inverter with MPPT and transformerless topology. IC Role / Device Role / Timing Role: High-reliability power switch in H-bridge output stage handling 1000 V DC input. Use Value: RoHS-compliant construction and guaranteed 600 V V_DSS meet IEC 62109 safety requirements for PV systems.

Server Power Supply

Industrial AC-DC Converter

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in active clamp forward or LLC resonant topology.

Use Value: Low R_DS(ON) and high E_AS enable >95% efficiency and withstand 600 V line surges without clamping circuitry.

Use Scenario: Main switch in 2 kW industrial motor drive DC bus converter with wide input range (380–480 VAC).

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in three-phase rectifier front-end stage.

Use Value: 61.8 A DC rating and 150 °C channel temperature allow sustained operation under full load with forced-air cooling.

EV Onboard Charger

Renewable Energy Inverter

Use Scenario: Switching element in bidirectional AC-DC stage of 6.6 kW OBC handling both grid and vehicle battery interfaces.

IC Role / Device Role / Timing Role: Synchronous rectifier and boost switch in dual-active-bridge topology.

Use Value: Fast t_r/t_f and low Q_g support ZVS-assisted switching, reducing switching loss at 150–200 kHz.

Use Scenario: DC-link switch in 5 kW solar string inverter with MPPT and transformerless topology.

IC Role / Device Role / Timing Role: High-reliability power switch in H-bridge output stage handling 1000 V DC input.

Use Value: RoHS-compliant construction and guaranteed 600 V V_DSS meet IEC 62109 safety requirements for PV systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(ON) = 0.035 Ω (typ.), TO-247-3L, no dedicated gate return pin	Lacks source separation; higher gate loop inductance limits EMI performance in high-dv/dt designs	Acceptable where PCB layout constraints prevent 4-pin routing; requires tighter gate driver placement.
IXFH60N60P	R_DS(ON) = 0.042 Ω (typ.), TO-247-3L, higher Q_g = 165 nC	Slower switching (t_on/t_off ≈ 100/30 ns) increases switching loss above 75 kHz	Suitable for cost-sensitive 50–75 kHz applications where thermal margin allows higher R_DS(ON).

Compared with STW62N60M2 and IXFH60N60P, the TK62Z60X,S1F offers superior gate-loop control via its 4-pin layout and lowest R_DS(ON) in its class-critical for minimizing conduction loss in high-current, high-frequency server and EV power supplies.

Availability

TK62Z60X,S1F is available at Aetrix Electronics and suitable for server power supply, industrial AC-DC converter, and renewable energy inverter applications requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for TK62Z60X,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power MOSFET design.

The TK62Z60X,S1F belongs to Toshiba's DTMOS-H super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density switching power supplies in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for TK62Z60X,S1F?

The TK62Z60X,S1F has a DC drain current rating of 61.8 A at case temperature T_c = 25 °C. This value decreases with rising case temperature per the guaranteed maximum PD–Tc curve (Fig. 8.15); at T_c = 100 °C, the usable I_D drops to approximately 35 A. Derating must follow Toshiba's reliability guidelines to maintain long-term stability.

How does the 4-pin TO-247-4L(T) package improve gate drive performance in TK62Z60X,S1F?

The TK62Z60X,S1F uses Pin 3 (Source 2) exclusively as the gate driver return path, isolating it from the main current-carrying Source 1 (Pin 2). This reduces gate loop inductance by eliminating shared source impedance, suppressing gate ringing, and improving switching consistency-especially critical in high-dv/dt, high-frequency applications like LLC resonant converters.

Is TK62Z60X,S1F suitable for avalanche-prone circuits such as PFC boost stages?

Yes. The TK62Z60X,S1F is fully rated for single-pulse avalanche with E_AS = 698 mJ (tested per Note 2 conditions). This makes it appropriate for unclamped inductive switching in boost PFC stages where voltage overshoot may exceed V_DSS, provided energy per event stays within the guaranteed limit and thermal limits are observed.

What is the typical reverse recovery performance of the body diode in TK62Z60X,S1F?

The integrated body diode of TK62Z60X,S1F has t_rr = 500 ns (typ.) and Q_rr = 7 µC (typ.) at I_DR = 30.9 A and dI_DR/dt = 50 A/µs. These values are measured under standardized conditions and support use in synchronous rectification and half-bridge topologies where controlled reverse recovery is essential to limit voltage spikes and EMI.

Does TK62Z60X,S1F comply with RoHS directives?

Yes. Per Toshiba's marking documentation (Fig. 7.1), the TK62Z60X,S1F is RoHS compliant-indicated by an underlined lot number prefix [[G]]/RoHS COMPATIBLE. It meets Directive 2011/65/EU and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.

TK62Z60X,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 61.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 3.1mA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 400W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4L(T)

TK62Z60X,S1F FAQ

1.How can I place an order for TK62Z60X,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK62Z60X,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK62Z60X,S1F reliable?

The price and inventory of TK62Z60X,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK62Z60X,S1F is usually 5 days.

3.What payment methods are accepted for TK62Z60X,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK62Z60X,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK62Z60X,S1F?

TK62Z60X,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK62Z60X,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK62Z60X,S1F?

For technical support, including TK62Z60X,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK62Z60X,S1F requirements.

6.How does Aetrix verify that TK62Z60X,S1F is sourced from the original manufacturer or authorized distributors?

All TK62Z60X,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK62Z60X,S1F meets industry standards.

7.What is the process for return or replacement of TK62Z60X,S1F?

All TK62Z60X,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK62Z60X,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK62Z60X,S1F part is unused and in its original packaging.

Return procedure for TK62Z60X,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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