Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TW060N120C,S1F

Name: TW060N120C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TW060N120C,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TW060N120C,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TW060N120C,S1F.pdf

Description:: G3 1200V SIC-MOSFET TO-247 60MO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:15

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TW060N120C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-voltage switching in industrial DC-DC converters and motor drives. It delivers 1200 V drain-source breakdown voltage, 60 mΩ typical R_DS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates up to 175 °C channel temperature.

For engineers reviewing the TW060N120C,S1F datasheet, TW060N120C,S1F pinout, TW060N120C,S1F application, or TW060N120C,S1F equivalent, key selection criteria include its third-generation SiC chip architecture, gate drive compatibility with 18 V on / 0 V off, low C_oss energy (31 µJ at 800 V), and TO-247 package thermal performance (R_th(ch-c) = 0.879 °C/W).

Technical Context

This device implements a normally-off enhancement-mode SiC MOSFET structure with built-in unipolar SiC Schottky body diode-eliminating minority-carrier reverse recovery losses. Its 3.0–5.0 V gate threshold voltage ensures robust noise immunity in high-dV/dt environments common in 1200 V systems.

Dynamic performance is optimized for hard-switched topologies: Q_g = 46 nC (typ.), Q_gd/Q_gs1 ratio of ~0.43 supports controlled turn-on/turn-off, and E_oss = 31 µJ enables efficient snubberless operation at 800 V bus voltage.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables direct use in 800 V DC-link systems with ≥50 % voltage margin for transients and derating.
R_DS(ON)	60 mΩ (typ. at V_GS = 18 V, I_D = 18 A, T_ch = 25 °C) - Delivers <1.9 W conduction loss at 18 A, reducing heatsink requirements.
V_DSF	−1.35 V (typ. at I_DR = 8 A, T_c = 25 °C) - Low forward drop of integrated SiC SBD minimizes body diode conduction loss in ZVS/ZCS circuits.
Q_g	46 nC (typ. at V_DD ≈ 800 V, I_D = 18 A) - Supports gate driver selection with ≤1 W average drive power at 100 kHz switching.
R_th(ch-c)	0.879 °C/W - Enables 170 W continuous dissipation at T_c = 25 °C, critical for compact heatsink integration in industrial inverters.
t_rr	54 ns (typ. at I_DR = 12 A, −dI_DR/dt = 1000 A/µs) - Near-zero reverse recovery eliminates tail current, enabling >200 kHz operation without shoot-through risk.

Pinout & Package

Package: TO-247 (Toshiba designation 2-16L1A), isolated heatsink-compatible metal tab (Drain connected to case), 3-terminal through-hole mounting, 6.15 g typical weight.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring 18 V nominal drive; ±0.1 µA leakage ensures minimal bias current draw.
2	Drain (heatsink)	Main high-side power terminal; electrically tied to metal tab for direct thermal coupling to heatsink.
3	Source	Reference node for gate drive and current sensing; must be routed with low-inductance layout to avoid oscillation.

Key Features

Feature	Design Value
Integrated SiC Schottky body diode	Eliminates reverse recovery charge (Q_rr = 9.6 nC typ.), enabling zero-current switching in resonant topologies without external diode.
High gate threshold voltage	V_th = 3.0–5.0 V ensures immunity to false turn-on during fast dV/dt transients (>50 V/ns) in high-power converters.
Low output capacitance energy	E_oss = 31 µJ at 800 V reduces turn-off loss and enables soft-switching design without auxiliary circuits.
Third-generation SiC die	Optimized trench-gate structure improves R_DS(ON) × area trade-off and enhances short-circuit withstand time vs. first-gen SiC MOSFETs.

Applications

Industrial DC-DC Converters	Solar Inverters
Use Scenario: 1500 V PV string input feeding isolated bidirectional DC-DC stage for battery storage coupling. IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology operating at 100–150 kHz. Use Value: 1200 V rating accommodates 1500 V string with safety margin; low E_oss enables ZVS across full load range, improving efficiency by 1.2 % at 50 kW.	Use Scenario: Uninterruptible power supply (UPS) with 1000 V DC bus feeding three-phase inverter stage. IC Role / Device Role / Timing Role: High-side switch in NPC (neutral-point-clamped) inverter leg, handling 30 A RMS output current. Use Value: Integrated SiC SBD prevents reverse recovery-induced shoot-through during commutation; 175 °C max T_ch allows derated operation in forced-air-cooled enclosures.
EV Onboard Chargers	Industrial Motor Drives
Use Scenario: 6.6 kW AC/DC PFC + DC/DC stage in bi-directional OBC for 800 V EV platforms. IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC front-end, switching at 120 kHz. Use Value: 60 mΩ R_DS(ON) and −1.35 V V_DSF reduce conduction loss by 35 % vs. Si superjunction MOSFETs, enabling >98 % PFC efficiency.	Use Scenario: 75 kW permanent magnet synchronous motor drive for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Inverter leg switch in 2-level topology, operated with active gate control for dv/dt limiting. Use Value: 0.879 °C/W R_th(ch-c) allows 36 A DC current at T_c = 100 °C, supporting peak torque delivery without thermal throttling.

Industrial DC-DC Converters

Solar Inverters

Use Scenario: 1500 V PV string input feeding isolated bidirectional DC-DC stage for battery storage coupling.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology operating at 100–150 kHz.

Use Value: 1200 V rating accommodates 1500 V string with safety margin; low E_oss enables ZVS across full load range, improving efficiency by 1.2 % at 50 kW.

Use Scenario: Uninterruptible power supply (UPS) with 1000 V DC bus feeding three-phase inverter stage.

IC Role / Device Role / Timing Role: High-side switch in NPC (neutral-point-clamped) inverter leg, handling 30 A RMS output current.

Use Value: Integrated SiC SBD prevents reverse recovery-induced shoot-through during commutation; 175 °C max T_ch allows derated operation in forced-air-cooled enclosures.

EV Onboard Chargers

Industrial Motor Drives

Use Scenario: 6.6 kW AC/DC PFC + DC/DC stage in bi-directional OBC for 800 V EV platforms.

IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC front-end, switching at 120 kHz.

Use Value: 60 mΩ R_DS(ON) and −1.35 V V_DSF reduce conduction loss by 35 % vs. Si superjunction MOSFETs, enabling >98 % PFC efficiency.

Use Scenario: 75 kW permanent magnet synchronous motor drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Inverter leg switch in 2-level topology, operated with active gate control for dv/dt limiting.

Use Value: 0.879 °C/W R_th(ch-c) allows 36 A DC current at T_c = 100 °C, supporting peak torque delivery without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STPSC60H12D2	R_DS(ON) = 65 mΩ (typ.), V_DSF = −1.5 V, Q_g = 42 nC, TO-247-3L package	Lower gate charge reduces driver loss but higher R_DS(ON) increases conduction loss at >25 A.	Preferred for lower-frequency (<50 kHz), high-current PFC where conduction dominates.
IXYS IXTH60N120S	R_DS(ON) = 62 mΩ (typ.), no integrated body diode, requires external SiC SBD, TO-247-3L	Higher system BOM count and layout complexity due to discrete diode placement and routing.	Selected when strict control over body diode characteristics (e.g., trr matching) is required in custom resonant designs.

Compared with STPSC60H12D2 and IXTH60N120S, the TW060N120C,S1F offers superior integration (built-in SBD), tighter R_DS(ON) tolerance (60 mΩ vs. 62–65 mΩ), and lower E_oss, making it optimal for high-frequency, space-constrained industrial converters where layout simplicity and efficiency are prioritized.

Availability

TW060N120C,S1F is available at Aetrix Electronics and suitable for industrial DC-DC converters, solar inverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for TW060N120C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in wide-bandgap technologies.

The TW060N120C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability 1200 V switching applications in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for TW060N120C,S1F at case temperature of 100 °C?

The TW060N120C,S1F supports 26 A DC drain current at T_c = 100 °C, as specified in its Absolute Maximum Ratings table. This rating reflects thermal limitation under sustained conduction, not transient capability. For pulsed operation at the same temperature, the device handles up to 65 A. Designers must ensure heatsink design maintains T_c ≤ 100 °C to sustain this current in continuous mode. The TW060N120C,S1F datasheet confirms these values in Section 4.

Does TW060N120C,S1F have a built-in body diode, and what are its key parameters?

Yes, the TW060N120C,S1F integrates a monolithic SiC Schottky barrier diode as its body diode. Key parameters include V_DSF = −1.35 V (typ. at 8 A, 25 °C), t_rr = 54 ns (typ.), and Q_rr = 9.6 nC (typ.). Unlike silicon MOSFETs, this diode exhibits no minority-carrier storage, eliminating reverse recovery losses. These values are measured per Section 6.4 of the official TW060N120C,S1F datasheet.

What gate drive voltage is recommended for reliable operation of TW060N120C,S1F?

Toshiba specifies V_GS(on) = 18 V and V_GS(off) = 0 V as the recommended gate drive conditions for the TW060N120C,S1F. A minimum of 15 V is required to fully enhance the channel and achieve rated R_DS(ON); driving below 12 V risks increased conduction loss and thermal stress. The gate threshold voltage range (3.0–5.0 V) provides noise margin against spurious turn-on. These recommendations appear in Section 2 "Features" of the TW060N120C,S1F documentation.

How does the thermal resistance of TW060N120C,S1F impact heatsink selection?

The TW060N120C,S1F has a channel-to-case thermal resistance R_th(ch-c) of 0.879 °C/W, meaning each watt of power dissipation raises the junction temperature by less than 0.88 °C above the case. To maintain T_ch ≤ 175 °C at 170 W dissipation (PD rating), the heatsink must hold T_c ≤ 25 °C - requiring high-performance forced-air or liquid cooling. This value is confirmed in Section 5 of the TW060N120C,S1F datasheet.

Is TW060N120C,S1F RoHS compliant, and how is compliance indicated on the device marking?

Yes, the TW060N120C,S1F is RoHS compliant. Per Section 7 of the datasheet, RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-RoHS versions display an unlined lot number with [[Pb]]/INCLUDES > MCV. Customers should verify marking format and consult Toshiba sales representatives for environmental certification documentation specific to their TW060N120C,S1F shipment batch.

TW060N120C,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 18A, 18V

Vgs(th) (Max) @ Id:: 5V @ 4.2mA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 18 V

Vgs (Max):: +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 1530 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TW060N120C,S1F FAQ

1.How can I place an order for TW060N120C,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TW060N120C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TW060N120C,S1F reliable?

The price and inventory of TW060N120C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW060N120C,S1F is usually 5 days.

3.What payment methods are accepted for TW060N120C,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW060N120C,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TW060N120C,S1F?

TW060N120C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TW060N120C,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TW060N120C,S1F?

For technical support, including TW060N120C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW060N120C,S1F requirements.

6.How does Aetrix verify that TW060N120C,S1F is sourced from the original manufacturer or authorized distributors?

All TW060N120C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW060N120C,S1F meets industry standards.

7.What is the process for return or replacement of TW060N120C,S1F?

All TW060N120C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW060N120C,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TW060N120C,S1F part is unused and in its original packaging.

Return procedure for TW060N120C,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…