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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
MSC060SMA070B SICFET N-CH 700V 39A TO247-3 Microchip Technology	79	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	39A (Tc)	20V	75mOhm @ 20A, 20V	2.4V @ 1mA	56 nC @ 20 V	+23V, -10V	1175 pF @ 700 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IXFH48N60X3 MOSFET ULTRA JCT 600V 48A TO247 Littelfuse Inc.	58	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	65mOhm @ 24A, 10V	5V @ 2.5mA	38 nC @ 10 V	±20V	2730 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
TW107N65C,S1F G3 650V SIC-MOSFET TO-247 107MO Toshiba Semiconductor and Storage	68	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	145mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	-	-	Through Hole	TO-247
TK39A60W,S4VX MOSFET N-CH 600V 38.8A TO220SIS Toshiba Semiconductor and Storage	54	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110 nC @ 10 V	±30V	4100 pF @ 300 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
NTH4L060N090SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	33	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V, 18V	43mOhm @ 20A, 18V	4.3V @ 5mA	87 nC @ 15 V	+22V, -8V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
MSC060SMA070S SICFET N-CH 700V 37A D3PAK Microchip Technology	92	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	37A (Tc)	20V	75mOhm @ 20A, 20V	2.4V @ 1mA (Typ)	56 nC @ 20 V	+23V, -10V	1175 pF @ 700 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
APT1204R7BFLLG MOSFET N-CH 1200V 3.5A TO247 Microchip Technology	43	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	3.5A (Tc)	10V	4.7Ohm @ 1.75A, 10V	5V @ 1mA	31 nC @ 10 V	±30V	715 pF @ 25 V	-	135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXFH86N30T MOSFET N-CH 300V 86A TO247AD Littelfuse Inc.	6	RFQ	Datasheet	HiPerFET™, Trench	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	86A (Tc)	10V	43mOhm @ 43A, 10V	5V @ 4mA	180 nC @ 10 V	±20V	11300 pF @ 25 V	-	860W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXFH50N50P3 MOSFET N-CH 500V 50A TO247AD IXYS	76	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	50A (Tc)	10V	120mOhm @ 25A, 10V	5V @ 4mA	85 nC @ 10 V	±30V	4335 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
TK62N60X,S1F MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	82	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK49N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	57mOhm @ 24.6A, 10V	4.5V @ 2.5mA	185 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
TK39J60W5,S1VQ MOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage	31	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
IMZA65R039M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	83	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A (Tc)	18V	50mOhm @ 25A, 18V	5.7V @ 7.5mA	41 nC @ 18 V	+20V, -2V	1393 pF @ 400 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-3
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	26	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
TK49N65W,S1F PB-F POWER MOSFET TRANSISTOR TO2 Toshiba Semiconductor and Storage	6	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	55mOhm @ 24.6A, 10V	3.5V @ 2.5mA	160 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
APT20M38BVRG MOSFET N-CH 200V 67A TO247 Microchip Technology	44	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	67A (Tc)	10V	38mOhm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	±30V	6120 pF @ 25 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
APT56F50B2 MOSFET N-CH 500V 56A T-MAX Microchip Technology	58	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	56A (Tc)	10V	100mOhm @ 28A, 10V	5V @ 2.5mA	220 nC @ 10 V	±30V	8800 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
IXTQ88N30P MOSFET N-CH 300V 88A TO3P Littelfuse Inc.	43	RFQ	Datasheet	Polar	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	88A (Tc)	10V	40mOhm @ 44A, 10V	5V @ 250µA	180 nC @ 10 V	±20V	6300 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
MSC080SMA120S SICFET N-CH 1200V 35A D3PAK Microchip Technology	24	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A	20V	100mOhm @ 15A, 20V	2.8V @ 1mA	64 nC @ 20 V	+23V, -10V	838 pF @ 1000 V	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
IXTT48P20P MOSFET P-CH 200V 48A TO268 Littelfuse Inc.	92	RFQ	Datasheet	PolarP™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA

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