Toshiba Semiconductor and Storage TK62N60X,S1F

Overview

TK62N60X from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and industrial DC-DC converters. It delivers 600 V V_DSS, 61.8 A I_D (DC), R_DS(ON) = 0.033 Ω (typ.), and operates with enhancement-mode gate threshold of 2.5–3.5 V - enabling direct drive from standard PWM controllers in 400 V bus applications.

For engineers reviewing the TK62N60X datasheet, TK62N60X pinout, TK62N60X application, or TK62N60X equivalent, this device is selected for high-efficiency, high-reliability 600 V switching stages where low conduction loss, robust avalanche capability (E_AS = 698 mJ), and fast switching (t_on = 90 ns, t_off = 240 ns) are critical to thermal management and system efficiency.

Technical Context

This MOSFET employs Toshiba's DTMOS™-H super-junction structure to achieve ultra-low R_DS(ON) while maintaining high dv/dt ruggedness (≥50 V/ns) and stable gate charge characteristics (Q_g = 135 nC, Q_gd = 50 nC). Its internal body diode supports synchronous rectification and ZVS operation in resonant topologies.

Designed for hard-switched and quasi-resonant converters, the TK62N60X features low C_iss (6500 pF) and C_oss (140 pF) at V_DS = 300 V, enabling high-frequency operation up to 100 kHz without excessive switching loss - validated under T_c = 25 °C with R_G = 10 Ω and V_DD ≈ 400 V.

Key Specifications

Pinout & Package

TK62N60X is housed in a TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated drain tab for direct heatsink mounting. Thermal resistance R_th(ch-c) = 0.313 °C/W enables efficient heat transfer from channel to case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STW62N60M2 and IPP60R040C7, the TK62N60X offers the lowest R_DS(ON) and highest guaranteed avalanche energy - making it optimal for hard-switched industrial power stages where conduction loss and transient robustness are prioritized over ultra-high-frequency optimization.

Availability

TK62N60X is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for TK62N60X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and logic devices with focus on energy efficiency, reliability, and industrial-grade performance.

The TK62N60X belongs to Toshiba's DTMOS™-H super-junction MOSFET product line, engineered specifically for high-voltage, high-current switching in offline AC-DC and DC-DC power conversion systems demanding low loss and high ruggedness.

FAQ

What is the maximum continuous drain current rating for TK62N60X?

The TK62N60X is rated for 61.8 A DC drain current at T_c = 25 °C. In practical board-level designs with standard TO-247 heatsinking, sustained operation above 40 A requires careful thermal design to maintain channel temperature below 150 °C - verified via R_th(ch-c) = 0.313 °C/W and ambient derating curves in the TK62N60X datasheet.

Does TK62N60X have an integrated body diode, and what are its key recovery parameters?

Yes, the TK62N60X includes a monolithic body diode optimized for power switching. Its reverse recovery time (t_rr) is 500 ns and reverse recovery charge (Q_rr) is 7 µC at I_DR = 30.9 A and dI_DR/dt = 50 A/µs - enabling use in DCM flyback and active-clamp forward converters without external diode supplementation.

What gate drive voltage range is required to fully enhance TK62N60X?

The TK62N60X is an enhancement-mode MOSFET with V_th = 2.5–3.5 V (V_DS = 10 V, I_D = 3.1 mA). To achieve specified R_DS(ON) = 0.033 Ω, a minimum V_GS of 10 V is required. Operation between 4.5 V and 10 V yields partial enhancement and higher on-resistance - not recommended for high-efficiency designs.

Is TK62N60X suitable for avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the TK62N60X is fully characterized for avalanche operation with a guaranteed single-pulse avalanche energy (E_AS) of 698 mJ at T_ch = 25 °C. This enables robust protection against inductive switching transients in motor drives and relay drivers without external clamping components - confirmed per test condition V_DD = 90 V, L = 5.08 mH, R_G = 25 Ω, I_AR = 15.5 A.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK62N60X, and how does it impact heatsink selection?

The TK62N60X has a maximum channel-to-case thermal resistance R_th(ch-c) of 0.313 °C/W. This low value reflects its TO-247 package with electrically isolated drain tab, allowing direct mounting to heatsinks. For a 40 W dissipation scenario, this translates to ≤12.5 °C temperature rise from junction to case - meaning heatsink thermal resistance (R_th(c-a)) must be ≤2.5 °C/W to hold T_ch ≤ 150 °C at 25 °C ambient.