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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK31Z60X,S1F

Name: TK31Z60X,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK31Z60X,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK31Z60X,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: TK31Z60X,S1F.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK31Z60X,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-efficiency switching voltage regulators. It delivers R_DS(ON) = 0.073 Ω (typ.), 600 V V_DSS, 30.8 A I_D (DC), and operates with V_th = 2.5–3.5 V in enhancement mode, enabling robust primary-side switching in offline SMPS.

For engineers reviewing the TK31Z60X,S1F datasheet, TK31Z60X,S1F pinout, TK31Z60X,S1F application, or TK31Z60X,S1F equivalent, key selection criteria include its TO-247-4L(T) package with isolated source pins, avalanche energy rating (E_AS = 437 mJ), and low C_iss (3000 pF) for fast, low-loss switching in high-voltage DC-DC converters.

Technical Context

The TK31Z60X,S1F implements Toshiba's DTMOS-H (Double-diffused Super Junction) structure to achieve ultra-low on-resistance while maintaining high breakdown voltage. Its four-terminal TO-247-4L(T) layout separates gate return (Source 2) from main current path (Source 1), reducing common-source inductance and improving switching stability under high di/dt.

Dynamic performance is optimized via low Crss (7 pF) and Co(er) (70 pF), supporting high-frequency operation up to 100 kHz in hard-switched PFC and LLC resonant converters. Gate charge values (Qg = 65 nC, Qgd = 22 nC) indicate moderate drive strength requirements compatible with standard gate drivers like UCC27531 or TC4427.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports universal-input AC/DC front-ends without derating in 230 VAC mains applications.
R_DS(ON)	0.073 Ω (typ.) - Enables <1.5 W conduction loss at 30 A, critical for >95% efficiency in 1 kW server PSUs.
I_D (DC)	30.8 A - Sustains continuous output current in single-phase PFC stages up to 1.5 kW.
E_AS	437 mJ - Withstands single-pulse avalanche events during overvoltage transients without failure.
C_iss	3000 pF - Limits gate drive power demand and enables clean turn-on with minimal overshoot.
Q_g	65 nC - Requires ~1.3 W average gate drive power at 100 kHz and 10 V swing, compatible with integrated drivers.
T_ch max	150 °C - Allows operation at full load with 0.543 °C/W thermal resistance to heatsink.

Pinout & Package

Package: TO-247-4L(T), also designated 2-16M2A by Toshiba; thermally enhanced plastic package with isolated source terminals and integral heatsink tab (Drain-connected). Weight: 6.35 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-voltage current path output	Connected to heatsink; carries full switched current and must be electrically isolated from PCB ground plane.
2 (Source 1)	Main current return path	Carries full load current (30.8 A); connects to power ground node to minimize high-di/dt loop area.
3 (Source 2)	Gate driver reference return	Used exclusively for gate signal return-separates control ground from power ground to suppress noise coupling.
4 (Gate)	Control input terminal	Receives 10 V logic-level drive; requires low-inductance routing to Source 2 to avoid oscillation.

Key Features

Feature	Design Value
Super-junction DTMOS-H structure	Enables 600 V rating with R_DS(ON) 3× lower than planar MOSFETs of same die size, reducing conduction losses in compact designs.
4-pin TO-247-4L(T) configuration	Eliminates source inductance impact on gate control loop, enabling stable 100+ kHz switching without external gate resistors or ferrite beads.
Low Crss (7 pF)	Minimizes Miller effect, allowing faster turn-off and improved dv/dt immunity (≥130 V/ns rated).
High E_AS (437 mJ)	Permits unclamped inductive switching in flyback and forward converters without external snubbers or clamps.
Enhancement-mode V_th	2.5–3.5 V threshold ensures reliable turn-off at 0 V gate bias and compatibility with 3.3 V/5 V microcontroller PWM outputs.

Applications

Server Power Supply	Industrial AC-DC Adapter
Use Scenario: Primary-side switch in 1 kW, 80 PLUS Titanium-certified server PSU with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, synchronized to 100 kHz PWM controller. Use Value: Low R_DS(ON) and high E_AS reduce conduction loss and eliminate need for external avalanche protection, lowering BOM cost and footprint.	Use Scenario: Main switch in 500 W industrial AC-DC adapter operating across -40°C to +85°C ambient. IC Role / Device Role / Timing Role: Hard-switched MOSFET in discontinuous conduction mode (DCM) flyback converter. Use Value: Stable V_th over temperature and 150°C channel rating ensure consistent startup and regulation across wide thermal range.
Telecom Rectifier Module	EV Charging Onboard Converter
Use Scenario: Switching device in 3 kW telecom rectifier with interleaved PFC stage. IC Role / Device Role / Timing Role: Fast-switching, high-current switch in boost PFC cell operating at 65 kHz. Use Value: Low Q_gd/Q_g ratio (0.34) minimizes switching loss during zero-crossing transitions, improving THD performance.	Use Scenario: DC-DC isolation stage switch in 6.6 kW onboard EV charger using dual-active-bridge topology. IC Role / Device Role / Timing Role: High-reliability 600 V switch handling bidirectional 30 A peak current at 150 kHz. Use Value: TO-247-4L(T) package with separate source pins maintains gate integrity under high common-mode dv/dt (>100 V/ns) in isolated gate drive configurations.

Server Power Supply

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in 1 kW, 80 PLUS Titanium-certified server PSU with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, synchronized to 100 kHz PWM controller.

Use Value: Low R_DS(ON) and high E_AS reduce conduction loss and eliminate need for external avalanche protection, lowering BOM cost and footprint.

Use Scenario: Main switch in 500 W industrial AC-DC adapter operating across -40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in discontinuous conduction mode (DCM) flyback converter.

Use Value: Stable V_th over temperature and 150°C channel rating ensure consistent startup and regulation across wide thermal range.

Telecom Rectifier Module

EV Charging Onboard Converter

Use Scenario: Switching device in 3 kW telecom rectifier with interleaved PFC stage.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch in boost PFC cell operating at 65 kHz.

Use Value: Low Q_gd/Q_g ratio (0.34) minimizes switching loss during zero-crossing transitions, improving THD performance.

Use Scenario: DC-DC isolation stage switch in 6.6 kW onboard EV charger using dual-active-bridge topology.

IC Role / Device Role / Timing Role: High-reliability 600 V switch handling bidirectional 30 A peak current at 150 kHz.

Use Value: TO-247-4L(T) package with separate source pins maintains gate integrity under high common-mode dv/dt (>100 V/ns) in isolated gate drive configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30N60DM6	600 V, 30 A, R_DS(ON) = 0.075 Ω, TO-247-3L, no dedicated gate-return source pin	Lacks source separation → higher gate loop inductance; requires careful layout to avoid ringing at >65 kHz	Preferred where cost sensitivity outweighs layout complexity and frequency headroom is limited.
IXTH30N60L2	600 V, 30 A, R_DS(ON) = 0.072 Ω, TO-247-3L, lower Qg (45 nC), but E_AS = 220 mJ	Lower avalanche capability limits use in unclamped topologies; better suited for ZVS/ZCS circuits	Select when gate drive power budget is constrained and system includes soft-switching control.

Compared with STW30N60DM6 and IXTH30N60L2, the TK31Z60X,S1F uniquely combines source pin separation, high E_AS, and industry-standard 600 V/30 A ratings-making it optimal for rugged, high-frequency hard-switched PFC and SMPS where layout simplicity and transient robustness are prioritized.

Availability

TK31Z60X,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK31Z60X,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade qualification.

The TK31Z60X,S1F belongs to Toshiba's DTMOS-H super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in enterprise and infrastructure equipment.

FAQ

What is the gate threshold voltage range for TK31Z60X,S1F?

The TK31Z60X,S1F has a gate threshold voltage (V_th) range of 2.5 V to 3.5 V, measured at V_DS = 10 V and I_D = 1.5 mA. This enhancement-mode specification ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers and stable turn-off at 0 V, making TK31Z60X,S1F suitable for microcontroller-based control systems without level-shifting circuitry.

Does TK31Z60X,S1F require a heatsink in typical operation?

Yes, TK31Z60X,S1F requires a heatsink in all continuous-duty applications. With R_th(ch-c) = 0.543 °C/W and maximum channel temperature of 150 °C, even at 15 A DC current and 0.073 Ω R_DS(ON), junction-to-case power dissipation exceeds 16 W-necessitating thermal interface material and a finned aluminum heatsink. The TO-247-4L(T) package's Drain tab is electrically active and must be insulated from chassis ground unless referenced to high-side potential.

How does the 4-pin configuration of TK31Z60X,S1F improve switching performance?

The 4-pin TO-247-4L(T) layout of TK31Z60X,S1F physically separates Source 1 (main current return) from Source 2 (gate driver return), eliminating shared source inductance between power and control loops. This reduces gate voltage distortion during high-di/dt switching, prevents false turn-on due to Miller coupling, and allows cleaner 100 kHz+ operation without added gate damping components-directly enhancing reliability in high-density power designs using TK31Z60X,S1F.

Is TK31Z60X,S1F suitable for avalanche-rated applications?

Yes, TK31Z60X,S1F is fully specified for single-pulse avalanche operation with E_AS = 437 mJ (T_ch = 25 °C) and I_AR = 7.7 A. This rating permits safe operation in unclamped inductive switching scenarios such as flyback transformer reset or relay coil suppression. However, repeated avalanche stress degrades reliability-designers should verify worst-case energy per pulse using the provided test conditions (V_DD = 90 V, L = 12.9 mH, R_G = 25 Ω) before deploying TK31Z60X,S1F in repetitive avalanche mode.

What is the maximum recommended gate drive voltage for TK31Z60X,S1F?

The absolute maximum gate-source voltage (V_GS) for TK31Z60X,S1F is ±30 V, but the recommended operating range is 10 V to 15 V for optimal R_DS(ON) and safe margin against oxide stress. Driving at 10 V achieves full enhancement (R_DS(ON) = 0.073 Ω typ.), while 12–15 V improves dV/dt immunity and reduces conduction loss marginally. Exceeding 18 V increases gate oxide wear rate and is not advised for long-life industrial applications using TK31Z60X,S1F.

TK31Z60X,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4L(T)

TK31Z60X,S1F FAQ

1.How can I place an order for TK31Z60X,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK31Z60X,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK31Z60X,S1F reliable?

The price and inventory of TK31Z60X,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK31Z60X,S1F is usually 5 days.

3.What payment methods are accepted for TK31Z60X,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK31Z60X,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK31Z60X,S1F?

TK31Z60X,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK31Z60X,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK31Z60X,S1F?

For technical support, including TK31Z60X,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK31Z60X,S1F requirements.

6.How does Aetrix verify that TK31Z60X,S1F is sourced from the original manufacturer or authorized distributors?

All TK31Z60X,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK31Z60X,S1F meets industry standards.

7.What is the process for return or replacement of TK31Z60X,S1F?

All TK31Z60X,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK31Z60X,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK31Z60X,S1F part is unused and in its original packaging.

Return procedure for TK31Z60X,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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