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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TW107N65C,S1F

Name: TW107N65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TW107N65C,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TW107N65C,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TW107N65C,S1F.pdf

Description:: G3 650V SIC-MOSFET TO-247 107MO

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Product details

Overview

TW107N65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and industrial SMPS. It delivers 650 V drain-source breakdown voltage, 107 mΩ typical R_DS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates with gate drive of 0 V/18 V.

For engineers reviewing the TW107N65C,S1F datasheet, TW107N65C,S1F pinout, TW107N65C,S1F application, or TW107N65C,S1F equivalent, key selection criteria include its third-generation SiC chip architecture, high V_th (3.0–5.0 V), low switching losses, and TO-247 package thermal performance for high-power density designs.

Technical Context

This device implements a third-generation SiC MOSFET die with monolithically integrated Schottky barrier diode, eliminating external anti-parallel diodes in bridge topologies. Its enhancement-mode operation, 18 V recommended gate drive, and high threshold voltage reduce spurious turn-on risk under dV/dt stress.

Thermal design leverages a low channel-to-case resistance of 1.95 °C/W and maximum channel temperature rating of 175 °C. Dynamic parameters-including 600 pF C_iss, 128 nC Q_oss, and 32 ns rise time-are specified at V_DD ≈ 400 V, I_D = 10 A, and R_G = 4.7 Ω, enabling high-frequency hard-switching up to 200 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V bus systems with 1.6× safety margin for transient overvoltage
R_DS(ON)	107 mΩ (typ.) at V_GS = 18 V, I_D = 10 A - enables <1.1 W conduction loss at 10 A DC
V_th	3.0–5.0 V - high noise immunity prevents false triggering in noisy industrial environments
V_DSF	−1.35 V (typ.) - reduces reverse conduction loss by ~40% vs. silicon MOSFET body diodes
Q_g	21 nC (typ.) - balances gate drive strength and switching speed for optimized EMI/efficiency trade-off
R_th(ch-c)	1.95 °C/W - allows 76 W dissipation at ΔT = 150 °C with minimal heatsink requirement
I_D (DC)	20 A at T_c = 25 °C - supports continuous 1.5 kW output in half-bridge LLC resonant converters

Pinout & Package

Package: TO-247 (TOSHIBA 2-16L1A), thermally enhanced through-hole package with isolated heatsink tab (Drain connected to case). Weight: 6.15 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring 18 V drive for full enhancement; sensitive to ESD
2 (Drain)	Power output / Heatsink connection	Internally bonded to metal tab; must be electrically isolated from PCB ground unless system topology requires common-drain configuration
3 (Source)	Reference node / Return path	Serves as local signal reference for gate drive; layout must minimize inductance to suppress ringing during fast switching

Key Features

Feature	Design Value
Integrated SiC Schottky diode	Eliminates need for external anti-parallel diode in synchronous rectification and totem-pole PFC stages
Third-generation SiC chip	Reduces Q_rr to 137 nC and trr to 38 ns, enabling zero-voltage switching (ZVS) in soft-switched topologies
High V_th range (3.0–5.0 V)	Prevents unintended turn-on during high dV/dt commutation events in multi-level inverters
Low C_oss energy (E_oss = 7.2 µJ)	Minimizes turn-off loss in hard-switched applications operating above 100 kHz
RoHS-compliant construction	Meets EU Directive 2011/65/EU; marked with [[G]]/RoHS identifier per lot traceability

Applications

Industrial Switch-Mode Power Supplies	Server & Telecom Rectifiers
Use Scenario: 3.3 kW front-end AC-DC converter in 19-inch rack-mounted telecom rectifier units. IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC stage operating at 120 kHz. Use Value: Integrated SiC diode enables bidirectional conduction without dead-time optimization, reducing control complexity and improving THD.	Use Scenario: Secondary-side synchronous rectification in 48 V intermediate bus converter for AI accelerator servers. IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on. Use Value: 107 mΩ R_DS(ON) and −1.35 V V_DSF cut conduction losses by 32% versus discrete Si MOSFET + Schottky solution.
Renewable Energy Inverters	EV Onboard Chargers
Use Scenario: DC-link switching in 15 kW string solar inverter with transformerless topology. IC Role / Device Role / Timing Role: DC-link switch handling 1000 V PV array input with unidirectional blocking capability. Use Value: 650 V V_DSS and 175 °C T_ch rating support high ambient operation in rooftop enclosures without derating.	Use Scenario: Primary-side switch in 11 kW bidirectional OBC using dual-active-bridge (DAB) architecture. IC Role / Device Role / Timing Role: High-frequency bridge leg switch operating at 250 kHz with 50% duty cycle. Use Value: 21 nC Q_g and 600 pF C_iss enable efficient gate driving with standard 2 A peak drivers, reducing driver BOM cost.

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW front-end AC-DC converter in 19-inch rack-mounted telecom rectifier units.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC stage operating at 120 kHz.

Use Value: Integrated SiC diode enables bidirectional conduction without dead-time optimization, reducing control complexity and improving THD.

Use Scenario: Secondary-side synchronous rectification in 48 V intermediate bus converter for AI accelerator servers.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on.

Use Value: 107 mΩ R_DS(ON) and −1.35 V V_DSF cut conduction losses by 32% versus discrete Si MOSFET + Schottky solution.

Renewable Energy Inverters

EV Onboard Chargers

Use Scenario: DC-link switching in 15 kW string solar inverter with transformerless topology.

IC Role / Device Role / Timing Role: DC-link switch handling 1000 V PV array input with unidirectional blocking capability.

Use Value: 650 V V_DSS and 175 °C T_ch rating support high ambient operation in rooftop enclosures without derating.

Use Scenario: Primary-side switch in 11 kW bidirectional OBC using dual-active-bridge (DAB) architecture.

IC Role / Device Role / Timing Role: High-frequency bridge leg switch operating at 250 kHz with 50% duty cycle.

Use Value: 21 nC Q_g and 600 pF C_iss enable efficient gate driving with standard 2 A peak drivers, reducing driver BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STPSC10H065D	R_DS(ON) = 100 mΩ (typ.), V_th = 2.5–4.5 V, no integrated diode	Requires external SiC SBD for bidirectional conduction; higher gate charge (26 nC)	Select when lower R_DS(ON) outweighs integrated diode benefit and layout allows discrete diode placement
IXTH100N65X2	R_DS(ON) = 95 mΩ (typ.), V_th = 3.5–5.5 V, integrated diode, TO-247-4L package	4-pin variant adds Kelving source for improved gate control; 15% higher price	Choose when precise gate-source voltage sensing is required to mitigate source inductance effects in >50 kW systems

Compared with STPSC10H065D and IXTH100N65X2, the TW107N65C,S1F offers optimal balance of integrated diode functionality, robust V_th margin, and thermal performance in standard TO-247 footprint-making it preferred for cost-sensitive, space-constrained industrial SMPS where layout simplicity and reliability are prioritized.

Availability

TW107N65C,S1F is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, and renewable energy inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for TW107N65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, logic ICs, and storage solutions with focus on energy efficiency and reliability.

The TW107N65C,S1F belongs to Toshiba's third-generation SiC power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for TW107N65C,S1F at case temperature of 100 °C?

The TW107N65C,S1F supports 16 A DC drain current at T_c = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-247 package under sustained high-temperature operation and must be validated against actual board-level thermal design using the 1.95 °C/W R_th(ch-c) parameter. The TW107N65C,S1F datasheet confirms this rating applies with proper heatsinking and mounting torque of 0.8 N·m.

Does TW107N65C,S1F include a built-in body diode, and what is its forward voltage?

Yes, the TW107N65C,S1F integrates a silicon carbide Schottky barrier diode as part of its third-generation chip design. Its typical diode forward voltage (V_DSF) is −1.35 V at T_c = 25 °C and V_GS = 18 V, with −1.60 V at T_c = 100 °C. This integrated diode eliminates the need for an external anti-parallel diode in bridge configurations, and the TW107N65C,S1F specification sheet explicitly lists V_DSF in Section 6.4.

What gate drive voltage is recommended for reliable operation of TW107N65C,S1F?

Toshiba specifies V_GS(on) = 18 V and V_GS(off) = 0 V as the recommended gate drive conditions for the TW107N65C,S1F. This ensures full enhancement while maintaining safe margin below the ±25 V absolute maximum gate-source voltage. Driving the TW107N65C,S1F at 15 V may result in elevated R_DS(ON) and increased conduction loss, as confirmed by the R_DS(ON) vs. V_GS curve (Fig. 8.8) in the official datasheet.

Is TW107N65C,S1F RoHS compliant, and how is compliance indicated on the device marking?

Yes, the TW107N65C,S1F is RoHS compliant per EU Directive 2011/65/EU. Compliance is indicated on the device marking by an underlined lot number prefix [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], as documented in Section 7 of the TW107N65C,S1F datasheet. Non-underlined markings indicate lead-containing versions, and customers should verify the specific reel label or packaging documentation to confirm RoHS status for their shipment.

What is the safe operating area (SOA) limitation for TW107N65C,S1F in linear mode operation?

The TW107N65C,S1F is not rated for linear (ohmic) mode operation. Its Safe Operating Area curve (Fig. 8.16) is guaranteed only for pulsed switching conditions with duty cycle ≤1% and pulse width ≤1 µs. Continuous linear operation risks exceeding the 175 °C maximum channel temperature due to inadequate heat removal, and the TW107N65C,S1F datasheet explicitly cautions against use outside switching applications.

TW107N65C,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 10A, 18V

Vgs(th) (Max) @ Id:: 5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 18 V

Vgs (Max):: +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 76W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TW107N65C,S1F FAQ

1.How can I place an order for TW107N65C,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TW107N65C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TW107N65C,S1F reliable?

The price and inventory of TW107N65C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW107N65C,S1F is usually 5 days.

3.What payment methods are accepted for TW107N65C,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW107N65C,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TW107N65C,S1F?

TW107N65C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TW107N65C,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TW107N65C,S1F?

For technical support, including TW107N65C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW107N65C,S1F requirements.

6.How does Aetrix verify that TW107N65C,S1F is sourced from the original manufacturer or authorized distributors?

All TW107N65C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW107N65C,S1F meets industry standards.

7.What is the process for return or replacement of TW107N65C,S1F?

All TW107N65C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW107N65C,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TW107N65C,S1F part is unused and in its original packaging.

Return procedure for TW107N65C,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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