Toshiba Semiconductor and Storage TK49N65W5,S1F

Overview

TK49N65W5,S1F from Toshiba is a 650 V, 49.2 A silicon N-channel super-junction MOSFET using DTMOS™ technology, optimized for high-efficiency switching in offline AC-DC power supplies and industrial SMPS. It delivers R_DS(ON) = 0.051 Ω (typ.), fast reverse recovery time (t_rr = 145 ns), and gate threshold voltage of 3–4.5 V, enabling robust hard-switching operation in PFC and main switch stages.

For engineers reviewing the TK49N65W5,S1F datasheet, TK49N65W5,S1F pinout, TK49N65W5,S1F application, or TK49N65W5,S1F equivalent, key selection criteria include avalanche energy rating (E_AS = 764 mJ), channel-to-case thermal resistance (R_th(ch-c) = 0.313 °C/W), dv/dt ruggedness (≥50 V/ns), and TO-247 package suitability for high-power thermal management.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to simultaneously reduce conduction and switching losses. Its low Q_g (185 nC) and Q_gd (90 nC) support high-frequency operation up to 100 kHz in continuous conduction mode (CCM) PFC, while the integrated body diode with t_rr = 145 ns (typ.) and Q_rr = 1.1 µC enables reliable zero-voltage switching (ZVS) transitions.

The TK49N65W5,S1F operates as an enhancement-mode device with V_th = 3–4.5 V, ensuring compatibility with standard 10 V gate drivers. Its safe operating area (SOA) is rated for single-pulse avalanche energy up to 764 mJ at T_ch = 25 °C, supporting robust overvoltage transient handling without external snubbers in well-designed layouts.

Key Specifications

Pinout & Package

TK49N65W5,S1F is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated drain tab for direct heatsink mounting. The case serves as the drain terminal, enabling low-inductance, high-current paths and efficient thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STW48N65M5 and IXFH44N65X2, the TK49N65W5,S1F offers the highest single-pulse avalanche energy (764 mJ) and strongest dv/dt immunity (≥50 V/ns), making it preferred for unclamped inductive switching in industrial SMPS where reliability under transient overload is critical.

Availability

TK49N65W5,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for TK49N65W5,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon power MOSFET innovation.

The TK49N65W5,S1F belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and telecom power conversion systems operating up to 650 V.

FAQ

What is the maximum continuous drain current rating for TK49N65W5,S1F at 25°C case temperature?

The TK49N65W5,S1F has a DC drain current rating of 49.2 A at T_c = 25 °C. This value decreases with rising case temperature-derating to approximately 24.6 A at T_c = 100 °C per the SOA curve. Designers must ensure heatsink design maintains T_c ≤ 100 °C to sustain full-rated current in continuous operation.

Does TK49N65W5,S1F have a fully characterized body diode suitable for synchronous rectification?

Yes, the TK49N65W5,S1F features a fully specified body diode with t_rr = 145 ns (typ.), Q_rr = 1.1 µC, and V_DSF = −1.7 V (max) at I_DR = 49.2 A. These parameters are measured and guaranteed per datasheet Section 6.4, enabling its use in quasi-resonant and LLC topologies where body diode conduction occurs during dead-time intervals.

What is the recommended gate resistor value for TK49N65W5,S1F in a 100 kHz PFC application?

For 100 kHz PFC operation, a gate resistor of 10–15 Ω is recommended for the TK49N65W5,S1F to balance switching loss (reduced by faster turn-on) and EMI/noise (controlled by limiting di/dt). This aligns with the datasheet's test condition (R_G = 10 Ω) for t_on = 170 ns and t_off = 270 ns, ensuring stable operation without gate oscillation.

Is TK49N65W5,S1F RoHS compliant and lead-free?

Yes, TK49N65W5,S1F is RoHS compliant and lead-free. Per the marking note in the datasheet, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], confirming compliance with Directive 2011/65/EU. Full environmental documentation is available through Toshiba's official product portal or authorized distributors.

How does the TK49N65W5,S1F compare to earlier DTMOS generations in terms of switching loss?

The TK49N65W5,S1F uses DTMOS™ IV technology, which reduces total gate charge (Q_g = 185 nC) by ~12% and output charge (Q_gd = 90 nC) by ~18% versus DTMOS™ III equivalents. This yields ~15% lower switching loss at 100 kHz in hard-switched PFC, verified via datasheet dynamic characteristics (Section 6.2) and gate charge curves (Section 6.3).