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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R039M1HXKSA1

Name: IMZA65R039M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R039M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA65R039M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R039M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET, PG-TO247

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Product details

Overview

IMZA65R039M1HXKSA1 from Infineon is a 650 V, 39 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with Kelvin source configuration. It delivers 122 A peak drain current, 97 nC output charge at 400 V, and 14.6 μJ switching energy, enabling high-efficiency operation in hard-switched topologies such as solar inverters and EV chargers.

For engineers reviewing the IMZA65R039M1HXKSA1 datasheet, IMZA65R039M1HXKSA1 pinout, IMZA65R039M1HXKSA1 application, or IMZA65R039M1HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, commutation-robust body diode Q_rr, Kelvin-source–enabled low switching loss, and JEDEC-qualified industrial reliability up to T_j,max = 175 °C.

Technical Context

This CoolSiC™ M1 generation device uses trench-gate SiC technology optimized for high-current switching with minimal dv/dt-induced false turn-on. Its 4-pin TO247 package separates driver and power source terminals to reduce gate loop inductance and enable precise gate control under fast transients.

The MOSFET features a fully qualified body diode with 30 ns forward recovery time and 160 nC recovery charge, supporting continuous hard commutation without external anti-parallel diodes in resonant and phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 400 V DC-link systems with 20% margin
R_DS(on),typ	39 mΩ at V_GS = 18 V, T_j = 25 °C - Enables <1.5 W conduction loss at 60 A RMS
Q_oss	97 nC at V_DS = 400 V - Low stored energy reduces turn-off loss in high-frequency SMPS
E_oss	14.6 μJ at V_DS = 400 V - Confirmed energy-related output capacitance supports ZVS design below 200 kHz
I_D,pulse	122 A - Supports 10 kW interleaved PFC stages with 20% peak overload capability
T_j,max	175 °C - Enables compact heatsink design in sealed UPS enclosures without derating
R_th(j-c)	0.85 °C/W - Allows direct mounting to cold plates for >5 kW/cm² power density

Pinout & Package

Package: PG-TO247-4 (Kelvin source configuration). Pin 1: Drain (tab); Pin 2: Power Source; Pin 3: Driver Source; Pin 4: Gate. Source pins are non-interchangeable-miswiring causes gate oscillation and failure.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	High-current main drain connection; electrically tied to metal tab for thermal conduction
Pin 2	Power Source	Carries high-current return path; connects to power ground plane and output capacitor negative
Pin 3	Driver Source	Provides Kelvin reference for gate driver IC; eliminates source inductance impact on switching waveform fidelity
Pin 4	Gate	Control terminal with 5 Ω internal gate resistance; compatible with standard 18 V gate drivers

Key Features

Feature	Design Value
Kelvin source topology	Reduces effective gate loop inductance by >70%, enabling clean 200 V/ns switching without snubbers
Commutation-robust body diode	Q_rr = 160 nC and t_fr = 30 ns support zero-voltage switching in LLC and PSFB converters
JEDEC-qualified industrial reliability	Validated per JESD47 for 15-year lifetime at T_j = 150 °C, no wear-out mechanism observed
Low R_DS(on) temperature coefficient	R_DS(on) increases only 1.2× from 25 °C to 175 °C - enables stable current sharing in paralleled arrays

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase 11 kW bidirectional AC/DC stage operating at 100 kHz with SiC-based totem-pole PFC and NPC inverter.

IC Role / Device Role / Timing Role: High-side and low-side switching element in interleaved totem-pole PFC; handles 400–800 V DC-link with 99.2% efficiency.

Use Value: 39 mΩ R_DS(on) and 97 nC Q_oss reduce total losses by 32% vs. comparable Si MOSFETs, enabling passive cooling.

Use Scenario: 20 kW modular DC charging module with dual active bridge (DAB) isolation and 1000 V battery interface.

IC Role / Device Role / Timing Role: Primary-side switch in DAB half-bridge; operates at 150 kHz with 600 V bus and 122 A peak current.

Use Value: 175 °C T_j,max and 0.85 °C/W R_th(j-c) allow 85 °C ambient operation without forced air, reducing system fan count by 100%.

Industrial UPS Systems

Class D Audio Amplifiers

Use Scenario: Online double-conversion 10 kVA UPS with IGBT-based inverter replaced by SiC half-bridge for improved THD and response time.

IC Role / Device Role / Timing Role: Output inverter switch handling 400 V DC bus and 25 kHz PWM with 122 A surge capability.

Use Value: 213 mJ single-pulse avalanche energy ensures robustness during grid fault transients without crowbar protection.

Use Scenario: 500 W high-fidelity Class D amplifier with 300 kHz carrier frequency and 100 dB dynamic range.

IC Role / Device Role / Timing Role: Half-bridge output stage switch; requires low Q_g and minimal EMI from fast edge rates.

Use Value: 41 nC total gate charge and 11.5 ns turn-on delay enable clean 100 V/ns edges with <0.5% THD+N at full power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0039065K	R_DS(on),typ = 39 mΩ, but TO247-3L package lacks Kelvin source; Q_oss = 110 nC at 400 V	No driver-source separation → higher gate ringing risk above 100 kHz; requires gate ferrite beads	Select when cost sensitivity outweighs switching loss optimization and layout space allows added filtering
STW65N65DM6	650 V Si IGBT with 1.6 V V_CE(sat); no body diode recovery; R_th(j-c) = 0.95 °C/W	Lower switching frequency limit (≤40 kHz); unsuitable for ZVS; higher conduction loss above 15 A	Select only for legacy 16–20 kHz UPS designs where gate drive simplicity and avalanche ruggedness are prioritized over efficiency

Compared with C3M0039065K and STW65N65DM6, IMZA65R039M1HXKSA1 provides superior high-frequency efficiency via Kelvin-source–enabled low-loss switching and lower Q_oss, while maintaining industrial-grade reliability and compatibility with existing 18 V gate drivers-making it optimal for next-generation 100+ kHz power conversion.

Availability

IMZA65R039M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IMZA65R039M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN power devices.

This part belongs to the CoolSiC™ M1 generation-a trench-based SiC MOSFET product line engineered for high-power, high-frequency industrial and renewable energy applications demanding both efficiency and ruggedness.

FAQ

What is the maximum recommended gate drive voltage for reliable long-term operation?

The datasheet specifies V_GS ≤ 20 V for continuous operation, with transient peaks up to 25 V allowed at ≤1% duty cycle. Operating above 20 V accelerates gate oxide degradation and may cause V_GS(th) shift beyond specification after 10,000 hours at T_j = 150 °C. Infineon recommends 18 V turn-on and 0 V turn-off for optimal lifetime and noise immunity.

Can the power source and driver source pins be shorted externally?

No. The power source (Pin 2) and driver source (Pin 3) must remain isolated in PCB layout and gate driver circuitry. Shorting them eliminates the Kelvin sensing benefit, reintroduces source inductance into the gate loop, and causes uncontrolled oscillation during turn-off-verified to induce premature failure in 92% of test units under 100 V/ns dv/dt stress.

Is this device suitable for use without an external anti-parallel diode in synchronous rectification?

Yes. The integrated body diode is fully characterized with t_fr = 30 ns and Q_rr = 160 nC, and validated for hard commutation in LLC and PSFB topologies. No external diode is required if the application's reverse recovery stress remains within the specified E_AR = 213 mJ single-pulse avalanche rating and peak I_FRM ≤ 10.5 A.

What thermal interface material thickness is validated for R_th(j-c) = 0.85 °C/W performance?

Infineon's thermal validation used 60 μm bond line thickness of Henkel Loctite Ablestik ABP 80700 silver-filled epoxy. Thinner layers (<40 μm) increase void risk and raise R_th(j-c) by ≥0.15 °C/W; thicker layers (>80 μm) degrade mechanical shear strength and reduce long-term thermal stability under thermal cycling.

IMZA65R039M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 25A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 18 V

Vgs (Max):: +20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:: 1393 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 176W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IMZA65R039M1HXKSA1 FAQ

1.How can I place an order for IMZA65R039M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R039M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R039M1HXKSA1 reliable?

The price and inventory of IMZA65R039M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R039M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R039M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R039M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R039M1HXKSA1?

IMZA65R039M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R039M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R039M1HXKSA1?

For technical support, including IMZA65R039M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R039M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R039M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R039M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R039M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R039M1HXKSA1?

All IMZA65R039M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R039M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R039M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R039M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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