Toshiba Semiconductor and Storage TK39A60W,S4VX

Overview

TK39A60W,S4VX from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 38.8 A continuous drain current, and ultra-low R_DS(ON) of 0.055 Ω (typ.) at V_GS = 10 V - enabling high-efficiency operation in 1–3 kW industrial SMPS and server power units.

For engineers reviewing the TK39A60W,S4VX datasheet, TK39A60W,S4VX pinout, TK39A60W,S4VX application, or TK39A60W,S4VX equivalent, this device is evaluated for high-frequency hard-switched PFC stages, LLC resonant half-bridges, and isolated flyback primary switches where low conduction loss, robust avalanche capability (E_AS = 608 mJ), and gate-drive simplicity are critical selection criteria.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with optimized super-junction cell structure to achieve simultaneous reduction in R_DS(ON) × Q_g figure-of-merit and improved dv/dt ruggedness (≥50 V/ns). Its enhancement-mode threshold voltage (2.7–3.7 V) ensures compatibility with standard 12 V gate drivers while maintaining noise immunity.

The device integrates a fast-recovery body diode (t_rr = 450 ns typ., Q_rr = 5 µC) and exhibits stable safe operating area (SOA) up to T_c = 100 °C, supporting reliable operation in repetitive avalanche conditions common in clamp circuits and snubberless topologies.

Key Specifications

Pinout & Package

TK39A60W,S4VX is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package - a surface-mount-compatible variant of TO-220 with isolated drain tab, enabling direct PCB mounting without insulating hardware. The package weighs 1.7 g and features creepage/clearance optimized for reinforced isolation up to 2000 V_RMS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N60M2 and IXFH50N60P, TK39A60W,S4VX offers superior balance of low R_DS(ON), controlled Q_g, and guaranteed avalanche performance - making it optimal for high-reliability, high-frequency SMPS where both conduction and switching losses must be minimized without compromising ruggedness.

Availability

TK39A60W,S4VX is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK39A60W,S4VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with core expertise in silicon power MOSFETs and IGBTs.

TK39A60W,S4VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, computing, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for TK39A60W,S4VX?

The TK39A60W,S4VX has a maximum continuous drain current (I_D) of 38.8 A at case temperature T_c = 25 °C. This rating decreases with rising case temperature - at T_c = 100 °C, the derated I_D is approximately 19.4 A. The device also supports 155 A pulsed drain current (I_DP) for short-duration switching events, as defined in its absolute maximum ratings table.

Does TK39A60W,S4VX have an integrated body diode, and what are its key recovery characteristics?

Yes, TK39A60W,S4VX includes an integrated fast-recovery body diode. Its reverse recovery time (t_rr) is 450 ns (typ.) at I_DR = 19.4 A and dI_DR/dt = 50 A/µs, with reverse recovery charge (Q_rr) of 5 µC (typ.). These values enable reduced switching loss and lower EMI in hard-switched and quasi-resonant topologies compared to standard MOSFETs with slower diodes.

What is the gate threshold voltage range for TK39A60W,S4VX, and how does it affect drive requirements?

The gate threshold voltage (V_th) for TK39A60W,S4VX is specified from 2.7 V to 3.7 V at V_DS = 10 V and I_D = 1.9 mA. This enhancement-mode range ensures reliable turn-on with standard 12 V gate drivers while providing sufficient noise margin against spurious turn-on - especially important in high-dv/dt environments like PFC boost stages where the TK39A60W,S4VX is commonly deployed.

Is TK39A60W,S4VX suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, TK39A60W,S4VX is fully rated for single-pulse avalanche operation with a guaranteed E_AS of 608 mJ at T_ch = 25 °C. This specification is validated under standardized test conditions (V_DD = 90 V, L = 11.3 mH, R_G = 25 Ω, I_AR = 9.7 A) and allows safe use in clamp circuits, snubberless flybacks, and other topologies where inductive energy must be absorbed without external components.

What package type does TK39A60W,S4VX use, and how does its thermal performance compare to standard TO-220?

TK39A60W,S4VX uses the TO-220SIS package (JEITA SC-67), which features an electrically isolated drain tab - unlike standard TO-220. Its channel-to-case thermal resistance (R_th(ch-c)) is 2.5 °C/W, identical to standard TO-220 variants, but the isolation enables direct mounting to grounded heatsinks without insulating pads. This simplifies thermal design and improves reliability in high-isolation applications such as medical and industrial power supplies.