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Toshiba Semiconductor and Storage TK39J60W5,S1VQ
- Part No.:
- TK39J60W5,S1VQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
TK39J60W5,S1VQ.pdf
- Description:
- MOSFET N-CH 600V 38.8A TO3P
- Quantity:
- Payment:
- Shipping:
Inventory:31
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Product details
Overview
TK39J60W5,S1VQ from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It delivers 600 V VDSS, 38.8 A continuous drain current, 0.062 Ω typical RDS(ON), and fast 150 ns reverse recovery time - enabling efficient operation in PFC and main-switch stages of industrial SMPS.
For engineers reviewing the TK39J60W5,S1VQ datasheet, TK39J60W5,S1VQ pinout, TK39J60W5,S1VQ application, or TK39J60W5,S1VQ equivalent, key selection criteria include avalanche energy rating (608 mJ), dv/dt ruggedness (≥50 V/ns), thermal resistance (0.463 °C/W channel-to-case), and TO-3P(N) package suitability for forced-air or heatsink-mounted high-power designs.
Technical Context
This device implements Toshiba's DTMOS™ (Double-diffused Trench MOS) super-junction architecture to achieve low conduction loss while maintaining robust switching performance. Its enhancement-mode gate threshold (3.0–4.5 V) ensures compatibility with standard 10 V gate drivers, and its integrated body diode supports synchronous rectification and flyback recovery.
The TK39J60W5,S1VQ features guaranteed single-pulse avalanche capability (EAS = 608 mJ at Tch = 25 °C), 50 V/ns dv/dt immunity, and low Qgd/Qg ratio (90/135 nC) - indicating strong Miller immunity and reduced turn-off losses in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports 400 V AC input mains with margin for surge and ringing in offline converters |
| RDS(ON) (typ.) | 0.062 Ω at VGS = 10 V, ID = 19.4 A - enables <1.2 W conduction loss at 20 A, reducing heatsink requirements |
| ID (DC) | 38.8 A at Tc = 25 °C - rated for continuous operation with adequate heatsinking in high-current PFC stages |
| trr (typ.) | 150 ns - minimizes diode recovery loss and EMI in bridge-leg and LLC resonant applications |
| EAS | 608 mJ - withstands single-pulse inductive energy without failure, critical for unclamped inductive switching |
| Rth(ch-c) | 0.463 °C/W - allows ~58 W power dissipation with 27 °C temperature rise from case to channel, supporting compact thermal design |
| Qg | 135 nC - determines gate drive power requirement (~1.35 mW per MHz at 10 V swing) for PWM control IC selection |
Pinout & Package
TK39J60W5,S1VQ is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated metal tab for direct heatsink mounting and 4.6 g mass. The case serves as the Drain terminal, enabling low-inductance high-current paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control electrode; requires ≤±30 V gate-source voltage; threshold 3.0–4.5 V enables TTL/CMOS-compatible drive |
| 2 | Drain (Heatsink) | Main high-side current path; electrically connected to metal case - must be insulated from chassis unless referenced to system ground |
| 3 | Source | Return path for load current; establishes reference for gate drive; low-inductance layout critical for switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ structure | Enables 600 V rating with 0.062 Ω RDS(ON), achieving >3× lower figure-of-merit than planar MOSFETs at same voltage class |
| Fast body diode recovery | 150 ns trr reduces cross-conduction loss and EMI in half-bridge and full-bridge configurations |
| High dv/dt immunity | ≥50 V/ns rated ruggedness prevents false turn-on during high-slew-rate voltage transients in motor drives and inverters |
| Single-pulse avalanche rating | 608 mJ EAS allows reliable operation under inductive switching stress without external snubbers in many designs |
| Enhancement-mode gate | 3.0–4.5 V Vth ensures predictable turn-on with standard 10 V gate drivers and avoids unintended conduction during startup |
Applications
| Server Power Supply PFC Stage | Industrial AC-DC Adapter |
|---|---|
Use Scenario: Active boost PFC circuit operating at 65–100 kHz with 380 V DC bus and 2 kW output. IC Role / Device Role / Timing Role: Main switching device handling full line current; synchronized to PFC controller's gate signal. Use Value: Low RDS(ON) and fast trr reduce conduction and recovery losses, improving efficiency from 95.2% to 96.1% at full load. |
Use Scenario: Universal-input (85–264 V AC) 500 W open-frame power supply for factory automation controllers. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology, switching at variable frequency up to 130 kHz. Use Value: 600 V rating and 608 mJ EAS eliminate need for clamping circuits during no-load or transient overvoltage events. |
| Solar Microinverter DC-DC Stage | UPS Inverter Half-Bridge |
Use Scenario: Isolated DC-DC stage stepping up PV panel output (30–60 V) to 400 V DC link in single-phase microinverter. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge configuration; driven by isolated gate driver. Use Value: 50 V/ns dv/dt immunity prevents spurious turn-on during high dV/dt commutation, enhancing reliability in ungrounded PV systems. |
Use Scenario: 1 kVA online UPS inverter using two-phase interleaved half-bridge with 50 kHz PWM. IC Role / Device Role / Timing Role: Low-side switch conducting 30 A RMS; body diode handles freewheeling current during dead-time. Use Value: 150 ns trr limits reverse recovery charge (Qrr = 1.2 µC), reducing shoot-through risk and thermal stress on complementary device. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | 600 V, 48 A, RDS(ON) = 0.055 Ω, trr = 220 ns, TO-247 package | Higher current rating but slower diode recovery; requires larger heatsink due to higher Rth(ch-a) | Preferred where peak current exceeds 38.8 A but diode speed is less critical |
| IPP60R099C7 | 600 V, 38 A, RDS(ON) = 0.099 Ω, trr = 110 ns, TO-220FP package | Lower avalanche rating (EAS = 320 mJ), smaller package with higher thermal resistance | Suitable for space-constrained designs with moderate avalanche stress and forced-air cooling |
Compared with STW48N60M2 and IPP60R099C7, the TK39J60W5,S1VQ offers superior balance of low RDS(ON), fast trr, and high EAS in a heatsink-mountable TO-3P(N) package - making it optimal for thermally demanding, high-reliability offline SMPS where both conduction efficiency and ruggedness are prioritized.
Availability
TK39J60W5,S1VQ is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server power supply PFC stages, and solar microinverter DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for TK39J60W5,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-voltage MOSFET technology.
The TK39J60W5,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in industrial, computing, and renewable energy applications.
FAQ
What is the maximum continuous drain current rating for TK39J60W5,S1VQ?
The TK39J60W5,S1VQ is rated for 38.8 A continuous drain current (ID) at case temperature Tc = 25 °C. Derating is required above this temperature - for example, at Tc = 100 °C, the usable ID drops to approximately 22 A based on its 0.463 °C/W channel-to-case thermal resistance and 150 °C maximum channel temperature limit.
Does TK39J60W5,S1VQ have an integrated body diode, and what are its key recovery characteristics?
Yes, the TK39J60W5,S1VQ includes a monolithic body diode optimized for fast recovery. Its reverse recovery time (trr) is 150 ns (typ.) at IDR = 19.4 A and dIDR/dt = 100 A/µs, with reverse recovery charge (Qrr) of 1.2 µC (typ.). These values enable low-loss operation in hard-switched and resonant topologies where diode conduction occurs during dead-time intervals.
What is the gate threshold voltage range for TK39J60W5,S1VQ, and how does it affect drive circuit design?
The TK39J60W5,S1VQ has a gate threshold voltage (Vth) range of 3.0 V to 4.5 V (measured at VDS = 10 V, ID = 1.9 mA). This enhancement-mode range ensures reliable turn-on with standard 10 V gate drivers while avoiding accidental activation from noise or leakage - simplifying drive circuit design compared to low-threshold or depletion-mode alternatives.
Is TK39J60W5,S1VQ RoHS compliant, and what marking indicates compliance?
Yes, the TK39J60W5,S1VQ is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-RoHS versions show non-underlined lot numbers and [[Pb]]/INCLUDES > MCV marking. Always verify marking on received units or consult Toshiba's latest environmental compliance reports.
What thermal resistance values are specified for TK39J60W5,S1VQ, and how do they impact heatsink selection?
The TK39J60W5,S1VQ specifies Rth(ch-c) = 0.463 °C/W (max) and Rth(ch-a) = 50 °C/W (max). The low channel-to-case value means heatsink interface quality dominates total thermal resistance - use thermal paste and ≥0.8 N·m mounting torque. For 27 W dissipation at 150 °C max channel temperature, a heatsink with ≤1.0 °C/W Rth(c-s) is recommended when ambient is 50 °C.
TK39J60W5,S1VQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 19.4A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4100 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 270W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P(N)
TK39J60W5,S1VQ FAQ
1.How can I place an order for TK39J60W5,S1VQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK39J60W5,S1VQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK39J60W5,S1VQ reliable?
The price and inventory of TK39J60W5,S1VQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK39J60W5,S1VQ is usually 5 days.
3.What payment methods are accepted for TK39J60W5,S1VQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK39J60W5,S1VQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK39J60W5,S1VQ?
TK39J60W5,S1VQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK39J60W5,S1VQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK39J60W5,S1VQ?
For technical support, including TK39J60W5,S1VQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK39J60W5,S1VQ requirements.
6.How does Aetrix verify that TK39J60W5,S1VQ is sourced from the original manufacturer or authorized distributors?
All TK39J60W5,S1VQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK39J60W5,S1VQ meets industry standards.
7.What is the process for return or replacement of TK39J60W5,S1VQ?
All TK39J60W5,S1VQ units undergo pre-shipment inspection (PSI). If there is an issue with TK39J60W5,S1VQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK39J60W5,S1VQ part is unused and in its original packaging.
Return procedure for TK39J60W5,S1VQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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